©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
KSC1845
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 120 V
VCEO Collector-Emitter Voltage 120 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 50 mA
IBBase Current 10 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=120V, IE=0 50 nA
IEBO Emitter Cut-off Current VEB=5V, IC=0 50 nA
hFE1
hFE2
DC Current Gain VCE=6V, IC=0.1mA
VCE=6V, IC=1mA 150
200 580
600 1200
VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 V
VBE (sat) Collector-Emitter Saturat ion Voltage IC=10mA, IB=1mA 0.07 0.3 V
fTCurrent Gain Bandwidth Product VCE=6V, IC=1mA 50 110 MHz
Cob Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 pF
NL Noise Level 25 40 mV
Classification P F E U
hFE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200
KSC1845
Audio Frequency Low Noise Amplifier
• Complement to KSA992
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation
KSC1845
Rev. B2, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
012345
0
2
4
6
8
10 IB=16µA
IB=14µA
IB=12µA
IB=10µA
IB=8µA
IB=6µA
IB=4µA
IB=2µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
020406080100
0.0
0.2
0.4
0.6
0.8
1.0 IB=1.4µAIB=1.2µA
IB=1.0µA
IB=0.8µA
IB=0.6µA
IB=0.4µA
IB=0.2µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10 100
0
100
200
300
400
500
600
700
800
900
1000 VCE = 6V
Pule Test
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
100
IC=10IB
Pulse Test
VBE(sat)
VCE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
10
100
1k
10k
VCE=6V
fT[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
IE[mA], EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
KSC1845
Rev. B2, November 2002
Typical Characteristics (Continued)
Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating
0.4 0.5 0.6 0.7 0.8 0.9
0.01
0.1
1
10
100
VCE = 6V
Pulse Test
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
100
200
300
400
500
600
700
800
PC[mW], POWER DISSIPATION
Ta[oC], CASE TEMPERATURE
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
KSC1845
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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