| SAMSUNG SEMICONDUCTOR INC wwe o ff 7164242 OOOL906 1 i To 29-2) KSC1845 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER TO-92 Complement to KSA992 ABSOLUTE MAXIMUM RATINGS (T.=25C) Characteristic Symbol Rating Unit Gollector-Base Voltage Vepo 120 Vv Collector-Emitter Voltage Vceo 120 Vv Emitter-Base Voltage Vepo 5 | v Colfector Current kb 50 mA Base Current fp 10 mA Collector Dissipation Po 500 mw Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C 1. Emitter 2. Collector 3. Baso ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition -. Min Typ Max Unit Collector Cutoff Current leso Vea=120V, [E=O 50 nA Emitter Cutoff Current lepo Vea=5V, Ic=O0 , 50 nA DC Current Gain hees Vee=6V, Ic=0.1mA 150 580 Drea Vce=6V, c= 1mA 200 600 1200 | Base Emitter On Voltage Vee (on) | Vce=6V, lc=1mA 0.65 0.59 0.65 Vv Collector Emitter Saturation Voltage Vee (sat) | b= 10mMA, b= 1mA 0.07 0.3 Vv Current Gain Bandwidth Product fy Vee=6V, le=1MA 50 110 MHz Output Capacitance Gob Vep=30V, =O 1.6 2.5 pF f=1MHz . Noise Voltage NV 25 40 mV hre(2) CLASSIFICATION Classification Pp F E U Hre(2) 200-400 300-600 400-800 | 600-4200 ce SAMSUNG SEMICONDUCTOR 176 SAMSUNG SEMICONDUCTOR INC LYE D Bo vaeyi4e 0006907? 3 i KSC1845 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 STATIC CHARACTERISTIC | STATIC CHARACTERISTIC: o a 0.6 2 {ma}, COLLECTOR CURRENT I{mA), COLLECTOR CURRENT bpm2pA 9 0 9 20 40 Vat), COLLECTOR-EMITTER VOLTAGE 1 2 4 Vee(V}, COLLECTOR-EMITTER VOLTAGE 3 : BASE-EMITTER SATURATION VOLTAGE DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE Bi g 5 2 ; : 8 3 2 3 2 u xo. O1 0305 1 365 410 30 50 100 ima}, COLLECTOR CURRENT LfmA}, COLLECTOR CURRENT CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR OUTPUT CAPACITANCE yiMHz, CURRENT GAIN BANDWIOTH PROOUCT Cob (pF), CAPACITANCE 4 . 10 2 50 400 Veet), COLLECTOR BASE VOLTAGE Ie{mA), EMITTER CURRENT cde SAMSUNG SEMICONDUCTOR 177 SAMSUNG SEMICONDUCTOR INC KSC1845 LYE D Bo escuzue goobq04 5 fj NPN EPITAXIAL SILICON TRANSISTOR COLLECTOA CURRENT Vedl), BASE VOLTAGE EQUIVALENT INPUT CURRENT NOISE SOURCE NE=10 bg 10f4 axt AG K: 1.38%10 {PK} 273.15+TaK) en (nVfH2), EQUIVALENT INPUT CURRENT NOISE SOURCE 0. 1{ma}, COLLECTOR CURRENT POWER DERATING T{C) AMBXSENT TEMPERATURE figl.:), SOURCE RESISTANCE ? 0.01 0.03.0.05 0.1 0305 1 a3 6 10 T-29-21 EQUIVALENT INPUT CURRENT NOISE SOURCE NF=10 bg 10 14 gp { 1.98 X10 (JK) 273.16+ ir RG)} 2 in (pPAIH2), EQUIVALENT INPUT CURRENT NOISE SOURCE fofmA}, COLLECTOR CURRENT NOISE FIGURE MHP 0.01 0030.05 0.1 0305 +1 4 6 #10 tofmA), COLLECTOR CURRENT cH SAMSUNG SEMICONDUCTOR 178