TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Product Features
• 600 – 2700 MHz
• +32.8 dBm P1dB
• +49.5 dBm Output IP3
• 15.8 dB Gain At 2140 MHz
• +5 V Single Supply, 435 mA Collector Current
• Internal RF Overdrive Protection
• Internal DC Overvoltage Protection
• Internal Active Bias
• On Chip ESD Protection
• Shut-down Capability
• Capable Of Handling 10:1 VSWR At +5 VCC,
• 2.14 GHz, +32.8 dBm CW POUT Or +23.5 dBm 
• WCDMA POUT
General Description
The TQP7M9104 is a high linearity driver amplifier in
industry standard, RoHS compliant, QFN surface mount
package. This InGaP / GaAs HBT delivers high
performance across 600 – 2700 MHz range of
frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and
+32.5 dBm P1dB at 2.14 GHz while only consuming
435 mA quiescent collector current. All devices are 100%
RF and DC tested.
The TQP7M9104 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system.
The TQP7M9104 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device is an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multi-
carrier 3G / 4G base stations.
Functional Block Diagram
Applications
• Repeaters
• BTS Transceivers
• BTS High Power Amplifiers
• CDMA / WCDMA / LTE
• General Purpose Wireless
24 Pin 4 mm x 4 mm leadless SMT Package
Ordering Information
Part No.
Description
TQP7M9104
2 Watt High Linearity Amplifier
TQP7M9104-PCB900
920 – 960 MHz EVB
TQP7M9104-PCB2140
2.11 – 2.17 GHz EVB
Standard T / R size = 2500 pieces on a 13” reel.
18 Iref
17 GND/NC
RFout/Vcc
16
15 RFout/Vcc
14 RFout/Vcc
13 GND/NC
12
11
10
9
8
7
6
GND/NC
RFin
RFin
GND/NC
GND/NC
Vbias
5
4
3
2
1
24
23
22
21
20
19
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Backside Paddle - RF/DC Ground
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Electrical specifications are measured at specified
test conditions. Specifications are not guaranteed
over all recommended operating conditions.
VCC
+5
+5.25
V
TCASE
−40
+85
 °C
Tj (for>106 hours MTTF)
170
 °C
Absolute Maximum Ratings
Parameter
Range / Value
Units
Operation of this device exceeding the parameter
ranges given may cause permanent damage.
Storage Temperature
−65 to +150 °C
°C
Device Voltage, VCC
+6.5 V
dBm
Maximum Input Power, CW
+30 dBm
V
Electrical Specifications
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 435 mA, Temp= +25°C, Using a TQP7M9104 Application circuit.
Parameter
Conditions
Min
Typ
Max
Units
Operational Bandwidth
600
2700
MHz
Test Frequency
2140
MHz
Power Gain
14.3
15.8
17.3
dB
Input Return Loss
12
dB
Output Return Loss
9.5
dB
Output IP3
Pout=+17 dBm / tone, ∆f=1 MHz
+45.5
+49.5
dBm
WCDMA Channel Power (1)
At −50 dBc ACLR
+23.8
dBm
Output P1dB
+32
+32.8
dBm
Noise Figure
4.4
dB
Quiescent Collector Current, Icq
355
435
490
mA
VCC
+5
V
IREF
19
mA
Thermal Resistance (jnc to case) θjc
15.7
 °C / W
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Device Characterization Data
S-Parameters
Test Conditions: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
−0.4553
−179.26
20.126
118.98
−43.273
4.1446
−1.8524
−155.37
100
−0.4348
178.69
15.971
124.23
−42.615
−1.4433
−1.8878
−166.21
200
−0.4583
176.36
13.24
126.46
−40.235
2.3772
−1.859
−172.01
400
−0.5124
173.38
10.778
118.38
−40.956
0.7196
−1.5792
−174.84
600
−0.5796
171.48
8.9263
108.51
−41.682
10.901
−1.6005
−175.51
800
−0.6594
170.04
7.3201
100.05
−42.533
−8.3414
−1.6164
−174.73
1000
−0.7617
169.21
6.2878
93.94
−42.841
6.4435
−1.531
−173.74
1200
−0.8777
168.95
5.7693
89.116
−40.461
3.1558
−1.6296
−171.43
1400
−1.1121
168.56
5.5556
83.209
−39.435
−0.2787
−1.7656
−170.12
1600
−1.4274
167.84
6.0222
74.67
−41.097
−1.3568
−1.8812
−167.74
1800
−1.9525
165.88
6.3509
63.971
−37.935
−22.971
−1.951
−165.22
2000
−3.0149
163.02
7.1412
51.862
−36.666
−37.917
−1.9853
−163.19
2200
−5.3234
162.27
8.1891
30.583
−35.423
−57.21
−1.7616
−163.18
2400
−7.8162
−179.65
8.2216
2.8455
−35.631
−78.615
−1.5099
−167.05
2600
−5.6951
−159.12
6.6099
−26.943
−35.017
−113.27
−1.2811
−172.58
2800
−3.2673
−161.75
3.8288
−51.412
−37.551
−151.24
−1.2268
−179.96
3000
−2.1416
−169.16
0.9043
−67.725
−39.417
−168.38
−1.4503
175.32
0
5
10
15
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
Gain (dB)
Frequency (GHz)
Gmax
Gain (S21)
0
1.0 1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
Input Reflection Coefficients Swp Max
3GHz
Swp Min
0.05GHz
S(1,1)
0
1.0 1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
Output Reflection Coefficients Swp Max
3GHz
Swp Min
0.05GHz
S(2,2)
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Reference Design: TQP7M9104 (615 – 655 MHz)
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistors may be replaced with copper trace in the target application layout.
3. Iref can be used as device power down current by placing R7 at location R8.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. R1 is critical for device linearity performance.
7. Critical component placement locations:
Distance between right edge of C8 and U1 device package is 193 mil
Distance between right edge of C20 and U1 device package is 336 mil
Distance between left edge of C2 and U1 device package is 453 mil
Distance between center of C9 and U1 device package is 275 mil
Typical Performance: TQP7M9104 (615 – 655 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Typical Value
Units
Frequency
615
635
655
MHz
Gain
20.8
21
21.1
dB
Input Return Loss
9.4
9
8.5
dB
Output Return Loss
7
7.7
9.2
dB
Output P1dB
+34
+34.3
+34.6
dBm
Output IP3 (+23 dBm / tone, ∆f = 1 MHz)
+43.6
+43.5
+43.5
dBm
Channel Power (At −50 dBc ACLR with 20MHz LTE)
+19
+18
+18
dB
C11 C10
R2 C9
C1
C7
C15
C3
C8
C2
R6R3
R1
L4
L1
U1
B1
C17
R7
C14
L3
C20
C13
1
2
3
4
5
6GND/NC
18
17
16
15
14
13
24
23
22
21
20
19
7
8
9
10
11
12
RFout
RFout
RFout
GND/NC
Iref
GND/NC
Vbias
GND/NC
GND/NC
RFin
RFin
GND/NC
U1
C10
22 pF
R2
51
J2
RF
Input
C9
2.2 nH C8
10 pF
C11
100 pF
J3
RF
Output
C2
12 pF
C3
4.7 pF
C7
10 uF
6032
C15
100 pF
L1
18 nH
0805
B1
0
C1
100 pF
C17
1000 pF
L3
0
R7
110
C14
100 pF
L4
0
R3
0
R6
220
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Vcc
+5V
R1
33 nH
C20
6.8 pF
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Performance Plots: TQP7M9104 (615 – 655 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
18
19
20
21
22
23
600 610 620 630 640 650 660 670
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
-15
-10
-5
0
600 610 620 630 640 650 660 670
|S11| & |S22| (dB)
Frequency (MHz)
Return Loss vs. Frequency
Input Return Loss
Output Return Loss
35
37
39
41
43
45
47
49
51
53
55
22 23 24 25 26 27 28
OIP3 (dBm)
Pout/Tone (dBm)
OIP3 vs. Pout/tone
615 MHz
635 MHz
655 MHz
-60
-55
-50
-45
-40
-35
12 14 16 18 20 22 24 26
ACPR (dBc)
Pout (dBm)
ACPR vs Pout
615 MHz
635 MHz
655 MHz
1C 20MHz LTE signal, PAR=9.5dB
30
31
32
33
34
35
36
610 620 630 640 650 660
P1dB (dBm)
Frequency (MHz)
P1dB vs Frequency
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Reference Design: TQP7M9104 (869 – 894 MHz)
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistors may be replaced with copper trace in the target application layout.
3. Iref can be used as device power down current by placing R7 at location R8.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. R1 is critical for device linearity performance.
7. Critical component placement locations:
Distance between center of C8 and U1 device package is 243 mil (11° at 880 MHz)
Distance between center of L5 and U1 device package is 452 mil (20.5° at 880 MHz)
Distance between center of C2 and U1 device package is 355 mil (16.1° at 880 MHz)
Distance between center of C9 and U1 device package is 275 mil (12.4° at 880 MHz)
Typical Performance: TQP7M9104 (869 – 894 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Typical Value
Units
Frequency
869
880
894
MHz
Gain
20.8
20.8
20.8
dB
Input Return Loss
−13.3
−13
−11.5
dB
Output Return Loss
−7.7
−8.6
−9.8
dB
Output P1dB
+34.3
+34.1
+33.8
dBm
Output IP3 (+23 dBm / tone, ∆f = 1 MHz)
+44.9
+44.9
+44.7
dBm
WCDMA Channel Power (At −50 dBc ACLR)
22
22.5
23
dB
C11 C10
R2 C9
C1
C7
C15
C3
C8
C2
R6R3
R1
L4
L1
U1
B1
C17
R7
C13
C14
L3
L5
1
2
3
4
5
6GND/NC
18
17
16
15
14
13
24
23
22
21
20
19
7
8
9
10
11
12
RFout
RFout
RFout
GND/NC
Iref
GND/NC
Vbias
GND/NC
GND/NC
RFin
RFin
GND/NC
U1
C10
22 pF
R2
51
J2
RF
Input
C9
2.7 pF
C8
8.2 pF
J3
RF
Output
C2
8.2 pF
C3
4.7 pF
C7
10 uF
6032
C15
100 pF
L1
18 nH
0805
B1
0
C1
100 pF
C17
1000 pF
L3
0
R1
33 nH
0603
C13
0.1 uF
R7
110
C14
100 pF
L4
0
R3
0
R6
220
C11
100 pF L5
6.8 nH
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Vcc
+5V
D3
SM05T1G
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Performance Plots: TQP7M9104 (869 – 894 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
18
19
20
21
22
0.85 0.86 0.87 0.88 0.89 0.90
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
Temp.=+25°C
-20
-15
-10
-5
0
0.85 0.86 0.87 0.88 0.89 0.90
|S11|, |S22| (dB)
Frequency (GHz)
Return Loss vs. Frequency
Temp.=+25°C
S22
S11
30
35
40
45
50
55
21 22 23 24 25 26 27
OIP3 (dBm)
Pout / Tone (dBm)
OIP3 vs. Pout / Tone
1MHz Tone Spacing
Temp.=+25°C
0.894 GHz
0.88 GHz
0.869 GHz
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22 24 26
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Temp.=+25oC
0.894 GHz
0.88 GHz
0.869 GHz
400
500
600
700
800
900
1,000
1,100
20 22 24 26 28 30 32 34
ICC (mA)
Output Power (dBm)
Collector Current vs. Output Power
Temp.=+25oC
Frequency : 0.88 GHz
CW Signal
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Application Circuit : TQP7M9104-PCB900 (920 – 960 MHz)
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 190 mil (9.2° at 940 MHz)
Distance between center of L5 and U1 device package is 452 mil (21.8° at 940 MHz)
Distance between center of C2 and U1 device package is 305 mil (14.7° at 940 MHz)
Distance between center of C9 and U1 device package is 275 mil (13.3° at 940 MHz)
C11 C10
R2 C9
C1
C7
C15
C3
C8
C2
R6R3
R1
L4
L1
U1
B1
C17
R7
C13
C14
L3
L5
1
2
3
4
5
6GND/NC
18
17
16
15
14
13
24
23
22
21
20
19
7
8
9
10
11
12
RFout
RFout
RFout
GND/NC
Iref
GND/NC
Vbias
GND/NC
GND/NC
RFin
RFin
GND/NC
U1
C10
22 pF
R2
51
J2
RF
Input
C9
2.7 pF
C8
6.8 pF
J3
RF
Output
C2
8.2 pF
C3
4.7 pF
C7
10 uF
6032
C15
100 pF
L1
18 nH
0805
B1
0
C1
100 pF
C17
1000 pF
L3
0
R1
33 nH
0603
C13
0.1 uF
R7
110
C14
100 pF
L4
0
R3
0
R6
220
C11
100 pF L5
6.8 nH
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Vcc
+5V
D3
SM05T1G
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Bill of Material – TQP7M9104
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
1078282
n/a
n/a
Printed Circuit Board
Qorvo
1078282
D3
n/a
Zener, dual, SOT-23
various
C9
2.7 pF
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
AVX
06035J2R7ABSTR
B1, L3, L4, R3
0 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
L5
6.8 nH
Inductor, 0603, 5%
Toko
LL1608-FSL6N8
C3
4.7 pF
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
AVX
06035J4R7ABSTR
C2, C8
8.2 pF
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
AVX
06035J8R2ABSTR
C10
22 pF
Capacitor, Chip, 0603, 5%, 50 V, NPO/COG
various
C1, C11, C14, C15
100 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
various
L1
18 nH
Inductor, 1008, 5%, Coilcraft CS Series
Coilcraft
1008HQ-18NXJL
C17
1000 pF
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
various
C13
0.1 μF
Capacitor, Chip, 0603, 50V, X5R, 10%
various
C7
10 μF
Capacitor , Tantalum, 6032, 35V, 10%
various
R2
51 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
R6
220 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R7
110 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R1
33 nH
Inductor, 0603, 5%
Toko
LL1608-FSL33N
R8, R4, C12, C4,D3
n/a
Do Not Place
Typical Performance: TQP7M9104-PCB900 (920 – 960 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Typical Value
Units
Frequency
920
940
960
MHz
Input Return Loss
−13
−12
−11
dB
Output Return Loss
−9
−11.8
−15
dB
Output P1dB
+33.9
+33.8
+33.4
dBm
Output IP3 (+23 dBm/tone, ∆f = 1 MHz)
+45
+45
+45
dBm
WCDMA Channel power (at −50 dBc ACLR) (1)
+24
+23.5
+23
dBm
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
RF Performance Plots: TQP7M9104-PCB900 (920 – 960 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
18
19
20
21
22
23
0.90 0.92 0.94 0.96 0.98 1.00
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-40 °C
+25°C
+85 °C
-20
-15
-10
-5
0
0.90 0.92 0.94 0.96 0.98 1.00
|S11| (dB)
Frequency (GHz)
Input Return Loss vs. Frequency
-40 °C
+25°C
+85 °C
-20
-15
-10
-5
0
0.90 0.92 0.94 0.96 0.98 1.00
|S22| (dB)
Frequency (GHz)
Output Return Loss vs. Frequency
-40 °C
+25°C
+85 °C
32
33
34
35
36
37
0.92 0.93 0.94 0.95 0.96
P1dB (dBm)
Frequency (GHz)
P1dB vs. Temperature
+85°C
+25°C
−40°C
30
35
40
45
50
55
21 22 23 24 25 26 27
OIP3 (dBm)
Pout / Tone(dBm)
OIP3 vs. Pout / Tone
1MHz Tone Spacing
-40 °C
+25°C
+85 °C
30
35
40
45
50
55
21 22 23 24 25 26 27
OIP3 (dBm)
Output Power / Tone (dBm)
OIP3 vs. Output Power
1MHz Tone Spacing
Temp.=+25oC
0.96 GHz
0.94 GHz
0.92 GHz
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22 24 26
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Frequency : 0.94 GHz
-40 °C
+25°C
+85 °C
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22 24 26
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Temp.=+25oC
0.96 GHz
0.94 GHz
0.92 GHz
400
500
600
700
800
900
1,000
1,100
16 18 20 22 24 26 28 30 32 34
ICC (mA)
Output Power (dBm)
Collector Current vs. Output Power
Temp.=+25oC
Frequency : 0.94 GHz
CW Signal
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Application Circuit: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 50 mil (5.5° at 2140 MHz)
Distance between center of C2 and U1 device package is 113 mil (12.4° at 2140 MHz)
Distance between center of C9 and U1 device package is 275 mil (30.3° at 2140 MHz)
C11 C10
R2 C9
C1
C7
C15
C3
C8
C2
R6R3
R1
L4
L1
U1
B1
C17
R7
C13
C14
L3
1
2
3
4
5
6GND/NC
18
17
16
15
14
13
24
23
22
21
20
19
7
8
9
10
11
12
RFout
RFout
RFout
GND/NC
Iref
GND/NC
Vbias
GND/NC
GND/NC
RFin
RFin
GND/NC
U1
C10
22 pF
R2
51
J2
RF
Input
C9
2.4 pF
C8
1.5 pF
C11
0
J3
RF
Output
C2
2.7 pF
C3
100 pF
C7
10 uF
6032
C15
22 pF
L1
18 nH
0805
B1
0
C1
100 pF
C17
1000 pF
L3
0
R1
120 nH
0603
C13
0.1 uF
R7
110
C14
100 pF
L4
0
R3
0
R6
220
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Vcc
+5V
D3
SM05T1G
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Bill of Material – TQP7M9104-PCB2140
Reference Des.
Value
Description
Manuf.
Part Number
U1
n/a
2W High Linearity Amplifier
Qorvo
TQP7M9104
n/a
n/a
Printed Circuit Board
Qorvo
1078282
D3
n/a
Zener, dual, SOT-23
various
C8
1.5 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J1R5ABSTR
C9
2.4 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J2R4ABSTR
C2
2.7 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J2R7ABSTR
B1, L3, L4, R3, C11
0 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
C10, C15
22 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
various
C1, C14, C3
100 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
various
L1
18 nH
Inductor, 1008, 5%, Ceramic
Coilcraft
1008HQ-18NXJL
C17
1000 pF
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
various
C13
0.1 μF
Capacitor, Chip, 0603, 10%, 50V, X5R
various
C7
10 μF
Capacitor , Tantalum, 6032, 20 %, 50V
various
R2
51 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
R6
220 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R7
110 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R1
120 nH
Inductor, 0603, 5%
Toko
LL1608-FSR12J
R8, R4, C12, C4, D3
n/a
Do Not Place
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Typical Performance: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA
Parameter
Typical Value
Units
Frequency
2110
2140
2170
MHz
Gain
15.8
15.8
15.8
dB
Input Return Loss
−12.4
−12.0
−11.8
dB
Output Return Loss
−8.7
−9.5
−10.5
dB
Output P1dB
+32.9
+32.8
+32.8
dBm
Output IP3 (+17 dBm / tone, ∆f = 1 MHz)
+49
+49.5
+50
dBm
WCDMA Channel power (at −50 dBc ACLR) (1)
+23.5
+23.8
+24.0
dBm
Noise Figure
4.4
4.4
4.6
dB
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25 °C
13
14
15
16
17
18
2.10 2.12 2.14 2.16 2.18 2.20
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-40°C
+25°C
+85°C
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
|S11| (dB)
Frequency (GHz)
Input Return Loss vs. Frequency
-40°C
+25°C
+85°C
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
|S22| (dB)
Frequency (GHz)
Output Return Loss vs. Frequency
-40°C
+25°C
+85°C
30
31
32
33
34
35
2.11 2.12 2.13 2.14 2.15 2.16 2.17
P1dB (dBm)
Frequency (GHz)
P1dB vs. Temperature
+85°C
+25°C
−40°C
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
RF Performance Plots: TQP7M9104-PCB2140 (2110 – 2170 MHz)
30
35
40
45
50
55
13 15 17 19 21 23 25
OIP3 (dBm)
Pout / Tone(dBm)
OIP3 vs. Pout / Tone
1MHz Tone Spacing
+85°C
+25°C
−40°C
30
35
40
45
50
55
13 15 17 19 21 23 25
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Frequency
1MHz Tone Spacing
Temp.=+25oC
2.17 GHz
2.14 GHz
2.11 GHz
-65
-60
-55
-50
-45
-40
17 19 21 23 25 27
ACLR (dBm)
Pout / Tone (dBm)
ACLR vs. Pout / Tone
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Frequency : 2.14 GHz
+85°C
+25°C
−40°C
-65
-60
-55
-50
-45
-40
17 19 21 23 25 27
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Temp.=+25oC
2.17 GHz
2.14 GHz
2.11 GHz
400
500
600
700
800
900
1,000
16 18 20 22 24 26 28 30 32 34
Collector Current (mA)
Output Power (dBm)
ICC vs. Output Power
Temp.=+25oC
Frequency : 2.14 GHz
CW Signal
2.0
3.0
4.0
5.0
6.0
2.11 2.12 2.13 2.14 2.15 2.16 2.17
NF (dB)
Frequency (GHz)
Noise Figure vs. Frequency
Temp.=+25°C
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Pin Configuration and Description
Pin No.
Symbol
Description
1
VBIAS
Voltage supply for active bias for the amp. Connect to same supply voltage as
Vcc.
2, 3, 6,7, 8, 9, 10, 11,
12, 13,17, 19, 20, 21,
22, 23, 24
GND / NC
No internal connection. This pin can be grounded or N/C on PCB. Land pads
should be provided for PCB mounting integrity.
4, 5
RFIN
RF Input. DC voltage present, blocking capacitor required. Requires external
match for optimal performance.
14, 15, 16
RFOUT / VCC
RF Output. DC Voltage present, blocking cap required. Requires external
match for optimal performance.
18
IREF
Reference current into internal active bias current mirror. Current into Iref sets
device quiescent current. Also, can be used as on/off control.
Backside paddle
RF / DC GND
Multiple Vias should be employed to minimize inductance and thermal
resistance. Use recommended via pattern shown under mounting configuration
and ensure good solder attach for optimum thermal and electrical performance
18 Iref
17 GND/NC
RFout/Vcc
16
15 RFout/Vcc
14 RFout/Vcc
13 GND/NC
12
11
10
9
8
7
6
GND/NC
RFin
RFin
GND/NC
GND/NC
Vbias
5
4
3
2
1
24
23
22
21
20
19
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Backside Paddle - RF/DC Ground
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Package Marking and Dimensions
Marking: Part Identifier – 7M9104
Date Code – YYMM
Lot code – AaXXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced
plastic very thin fine pitch quad flat no lead package (QFN).
3. Dimension and tolerance formats conform to ASME Y14.4M-1994.
4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
5. Co-planarity applies to the exposed ground/thermal pad as well as the contact pins.
6. Package body length/width does not include plastic flash protrusion across mold parting line.
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend
a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
5. Place mounting screws near the part to fasten a back side heat sink.
6. Do not apply solder mask to the back side of the PC board in the heat sink contact region.
7. Ensure that the backside via region makes good physical contact with the heat sink.
6
0.64
0.64
R.19
3
2.70
24X 0.70
0.50 PITCH
2.70
2.70
0.19
24X 0.38
BACK SIDE
(SOLDER MASK)
MINIMUM BACKSIDE THERMAL
CONTACT AREA
1 1
COMPONENT SIDE
16X PACKAGE
OUTLINE
GND/THERMAL PAD
.10 C
.08 CSEATING PLANE
24X
4.000
4.000 2.70±0.05
Exp. DAP
24X 0.40±0.05
2.70±0.05
Exp. DAP
.850±0.050
C
24X 0.25±0.05
24X 0.50 Pitch Pin #1 IDENTIFIER
CHAMFER 0.300 x 45°
TERMINAL #1
IDENTIFIER
5
6
6
4
5
R.075 2.50 Ref.
.203 Ref.
0.000
0.050
7M9104
YYMM
AaXXXX
TQP7M9104
2W High-Linearity Amplifier
Data Sheet, August 2020 | Subject to change without notice
www.qorvo.com
®
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM)
Class 1C
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
Class C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 1
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Annealed Matte Tin over Copper
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information: Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.