TQP7M9104 2W High-Linearity Amplifier (R) General Description The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 600-2700 MHz range of frequencies with 15.8dB Gain, +49.5dBm OIP3 and +32.5dBm P1dB at 2.14GHz while only consuming 435mA quiescent collector current. All devices are 100% RF and DC tested. 24 Pin 4mmx4mm leadless SMT Package Product Features The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. * * * * * * * * * * * * * The TQP7M9104 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multicarrier 3G/4G base stations. 600-2700MHz +32.8dBm P1dB +49.5dBm Output IP3 15.8dB Gain At 2140MHz +5V Single Supply, 435mA Collector Current Internal RF Overdrive Protection Internal DC Overvoltage Protection Internal Active Bias On Chip ESD Protection Shut-down Capability Capable Of Handling 10:1 VSWR At +5VCC, 2.14GHz,+32.8dBmCWPOUT Or+23.5dBm WCDMAPOUT GND/NC GND/NC GND/NC GND/NC GND/NC 19 20 21 22 5 14 6 13 GND/NC RFout/Vcc RFout/Vcc RFout/Vcc Repeaters BTS Transceivers BTS High Power Amplifiers CDMA/WCDMA/LTE General Purpose Wireless GND/NC GND/NC GND/NC GND/NC GND/NC * * * * * Iref 12 15 11 4 7 GND/NC 16 10 RFin 17 3 9 RFin 2 GND/NC GND/NC 18 GND/NC GND/NC Applications 1 8 Vbias 23 24 GND/NC Functional Block Diagram Ordering Information Backside Paddle - RF/DC Ground Part No. Description TQP7M9104 2 Watt High Linearity Amplifier TQP7M9104-PCB900 920-960MHz EVB TQP7M9104-PCB2140 2.11-2.17GHz EVB Standard T/R size = 2500 pieces on a 13" reel. Data Sheet, August 2020 | Subject to change without notice 1 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Recommended Operating Conditions Parameter VCC TCASE Tj (for>106 hours MTTF) Min -40 Typ Max Units +5 +5.25 +85 170 V C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Storage Temperature Device Voltage, VCC Maximum Input Power, CW Range/Value Units -65 to +150C +6.5V +30dBm C dBm V Operation of this device exceeding the parameter ranges given may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VCC=+5 V, ICQ = 435 mA, Temp= +25C, Using a TQP7M9104 Application circuit. Parameter Operational Bandwidth Test Frequency Power Gain Input Return Loss Output Return Loss Output IP3 WCDMA Channel Power (1) Output P1dB Noise Figure Quiescent Collector Current, Icq VCC IREF Thermal Resistance (jnc to case) jc Conditions Min Typ 600 14.3 Pout=+17dBm/tone, f=1MHz +45.5 At -50 dBc ACLR +32 355 2140 15.8 12 9.5 +49.5 +23.8 +32.8 4.4 435 +5 19 15.7 Max Units 2700 MHz MHz dB dB dB dBm dBm dBm dB mA V mA C/W 17.3 490 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Data Sheet, August 2020 | Subject to change without notice 2 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Device Characterization Data Input Reflection Coefficients 0.8 0 2. 0 0 3. 0 4. 30 0 4. 5.0 5.0 0.2 0.2 25 15 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0.2 Gmax 20 0.4 10.0 -10.0 2.5 3 S(1,1) Swp Min 0.05GHz S(2,2) .0 -2 .0 -2 -0 .6 2 Frequency (GHz) -1.0 1.5 -0.8 1 -0 .6 0.5 .4 -0 -1.0 .0 0 -3 .4 -0 0 -0.8 -4 .0 -5. 0 5 2 -0. -3 .0 2 -0. Gain (S21) -4 .0 -5. 0 10 -10.0 Gain (dB) Swp Max 3GHz 6 0. 2. 0 0. 4 3. 1.0 1.0 0.8 35 Output Reflection Coefficients Swp Max 3GHz 6 0. 40 0. 4 45 Swp Min 0.05GHz S-Parameters Test Conditions: VCC=+5 V, ICQ=435mA, IREF=19mA, T=+25C, unmatched 50 ohm system, calibrated to device leads Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -0.4553 -179.26 20.126 118.98 -43.273 4.1446 -1.8524 -155.37 100 -0.4348 178.69 15.971 124.23 -42.615 -1.4433 -1.8878 -166.21 200 -0.4583 176.36 13.24 126.46 -40.235 2.3772 -1.859 -172.01 400 -0.5124 173.38 10.778 118.38 -40.956 0.7196 -1.5792 -174.84 600 -0.5796 171.48 8.9263 108.51 -41.682 10.901 -1.6005 -175.51 800 -0.6594 170.04 7.3201 100.05 -42.533 -8.3414 -1.6164 -174.73 1000 -0.7617 169.21 6.2878 93.94 -42.841 6.4435 -1.531 -173.74 1200 -0.8777 168.95 5.7693 89.116 -40.461 3.1558 -1.6296 -171.43 1400 -1.1121 168.56 5.5556 83.209 -39.435 -0.2787 -1.7656 -170.12 1600 -1.4274 167.84 6.0222 74.67 -41.097 -1.3568 -1.8812 -167.74 1800 -1.9525 165.88 6.3509 63.971 -37.935 -22.971 -1.951 -165.22 2000 -3.0149 163.02 7.1412 51.862 -36.666 -37.917 -1.9853 -163.19 2200 -5.3234 162.27 8.1891 30.583 -35.423 -57.21 -1.7616 -163.18 2400 -7.8162 -179.65 8.2216 2.8455 -35.631 -78.615 -1.5099 -167.05 2600 -5.6951 -159.12 6.6099 -26.943 -35.017 -113.27 -1.2811 -172.58 2800 -3.2673 -161.75 3.8288 -51.412 -37.551 -151.24 -1.2268 -179.96 3000 -2.1416 -169.16 0.9043 -67.725 -39.417 -168.38 -1.4503 175.32 Data Sheet, August 2020 | Subject to change without notice 3 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Reference Design: TQP7M9104 (615-655MHz) Vcc +5V C7 R6 220 C17 C20 2.2 nH C8 6.8 pF 10 pF 6 5 20 21 22 19 GND/NC GND/NC GND/NC 23 RFin RFout GND/NC GND/NC 7 22 pF RFout GND/NC C10 U1 RFin 18 17 C15 100 pF L1 18 nH 0805 16 C3 J3 4.7 pF RF Output 15 C2 14 12 pF 13 12 100 pF 4 GND/NC RF Input C9 RFout 11 51 GND/NC GND/NC C11 GND/NC 10 J2 3 GND/NC GND/NC 2 R2 Iref 9 C8 C3 C2 U1 C9 C20 R2 C10 C1 100 pF B1 0 L3 0 Vbias 1 C11 GND/NC 24 C14 100 pF GND/NC GND/NC L4 0 GND/NC C15 R1 33 nH GND/NC B1 R1 1000 pF R3 0 L1 C14 C17 C1 L3 L4 R3 C13 10 uF 6032 R7 110 8 R6 R7 C7 Notes: 1. Components shown on the silkscreen but not on the schematic are not used. 2. 0 resistors may be replaced with copper trace in the target application layout. 3. Iref can be used as device power down current by placing R7 at location R8. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. R1 is critical for device linearity performance. 7. Critical component placement locations: Distance between right edge of C8 and U1 device package is 193 mil Distance between right edge of C20 and U1 device package is 336 mil Distance between left edge of C2 and U1 device package is 453 mil Distance between center of C9 and U1 device package is 275 mil Typical Performance: TQP7M9104 (615-655MHz) Test conditions unless otherwise noted: VCC=+5 V, ICQ=435mA, IREF=19mA, T=+25C Parameter Units Typical Value Frequency Gain Input Return Loss Output Return Loss Output P1dB 615 20.8 9.4 7 +34 635 21 9 7.7 +34.3 655 21.1 8.5 9.2 +34.6 MHz dB dB dB dBm Output IP3 (+23dBm/tone, f = 1MHz) Channel Power (At -50dBc ACLR with 20MHz LTE) +43.6 +19 +43.5 +18 +43.5 +18 dBm dB Data Sheet, August 2020 | Subject to change without notice 4 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Performance Plots: TQP7M9104 (615-655MHz) Test conditions unless otherwise noted: VCC=+5 V, Temp=+25C Gain vs. Frequency 23 Return Loss vs. Frequency 0 OIP3 vs. Pout/tone 55 53 51 21 20 49 -5 OIP3 (dBm) |S11| & |S22| (dB) Gain (dB) 22 -10 47 45 43 41 19 39 615 MHz Input Return Loss 37 635 MHz Output Return Loss 18 655 MHz -15 600 610 620 630 640 650 660 670 35 600 610 620 Frequency (MHz) 640 650 660 670 Frequency (MHz) ACPR vs Pout -35 630 22 23 24 25 26 27 28 Pout/Tone (dBm) P1dB vs Frequency 36 1C 20MHz LTE signal, PAR=9.5dB 35 -40 P1dB (dBm) ACPR (dBc) 34 -45 -50 33 32 -55 31 615 MHz 635 MHz 655 MHz -60 12 14 16 18 20 22 24 30 26 Pout (dBm) Data Sheet, August 2020 | Subject to change without notice 610 620 630 640 650 660 Frequency (MHz) 5 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Reference Design: TQP7M9104 (869-894MHz) Vcc +5V C7 R1 B1 0.1 uF R3 0 20 21 22 19 GND/NC GND/NC GND/NC 18 17 C15 100 pF L1 18 nH 0805 16 C3 J3 4.7 pF RF Output 15 C2 14 8.2 pF 13 12 7 8.2 pF GND/NC GND/NC GND/NC GND/NC 6 RFout 11 5 C8 RFout RFin GND/NC 2.7 pF L5 6.8 nH U1 RFin 10 22 pF RFout 9 4 C10 100 pF 23 24 C9 51 GND/NC GND/NC GND/NC C11 L3 0 GND/NC GND/NC J2 RF Input 3 C1 100 pF B1 0 Iref GND/NC C2 2 1000 pF R1 33 nH 0603 Vbias 1 R2 GND/NC GND/NC C14 C3 GND/NC L4 0 100 pF C8 C10 C17 C15 U1 C9 L5 C11 C13 L1 C14 R2 C7 10 uF 6032 C1 L3 L4 R3 C13 R7 110 D3 SM05T1G C17 8 R6 R7 R6 220 Notes: 1. Components shown on the silkscreen but not on the schematic are not used. 2. 0 resistors may be replaced with copper trace in the target application layout. 3. Iref can be used as device power down current by placing R7 at location R8. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. R1 is critical for device linearity performance. 7. Critical component placement locations: Distance between center of C8 and U1 device package is 243 mil (11 at 880MHz) Distance between center of L5 and U1 device package is 452 mil (20.5 at 880MHz) Distance between center of C2 and U1 device package is 355 mil (16.1 at 880MHz) Distance between center of C9 and U1 device package is 275 mil (12.4 at 880MHz) Typical Performance: TQP7M9104 (869-894MHz) Test conditions unless otherwise noted: VCC=+5 V, ICQ=435mA, IREF=19mA, T=+25C Parameter Units Typical Value Frequency Gain Input Return Loss Output Return Loss Output P1dB 869 20.8 -13.3 -7.7 +34.3 880 20.8 -13 -8.6 +34.1 894 20.8 -11.5 -9.8 +33.8 MHz dB dB dB dBm Output IP3 (+23dBm/tone, f = 1MHz) WCDMA Channel Power (At -50dBc ACLR) +44.9 22 +44.9 22.5 +44.7 23 dBm dB Data Sheet, August 2020 | Subject to change without notice 6 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Performance Plots: TQP7M9104 (869-894MHz) Test conditions unless otherwise noted: VCC=+5 V, Temp=+25C Gain vs. Frequency 22 Return Loss vs. Frequency 0 Temp.=+25C Temp.=+25C |S11|, |S22| (dB) Gain (dB) 21 20 19 18 0.85 0.86 0.87 0.88 0.89 -5 S22 S11 -10 -15 -20 0.85 0.90 0.86 0.87 Frequency (GHz) OIP3 vs. Pout / Tone 55 0.90 50 ACLR (dBm) -45 45 0.894 GHz 0.88 GHz 0.869 GHz Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB at 0.01% Probability 3.84 MHz BW Temp.=+25C OIP3 (dBm) 0.89 ACLR vs. Output Power -40 1MHz Tone Spacing 40 0.88 Frequency (GHz) -50 0.894 GHz -55 0.88 GHz 0.869 GHz -60 35 -65 30 21 22 23 24 25 26 12 27 14 16 20 22 24 26 Collector Current vs. Output Power 1,100 1,000 18 Output Power (dBm) Pout / Tone (dBm) Frequency : 0.88 GHz CW Signal Temp.=+25oC ICC (mA) 900 800 700 600 500 400 20 22 24 26 28 30 32 34 Output Power (dBm) Data Sheet, August 2020 | Subject to change without notice 7 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Application Circuit : TQP7M9104-PCB900 (920-960MHz) Vcc +5V R6 220 R7 C7 10 uF 6032 C17 6 20 21 22 19 GND/NC GND/NC GND/NC 23 GND/NC 7 6.8 pF RFout GND/NC GND/NC C8 RFin 18 17 C15 100 pF L1 18 nH 0805 16 C3 J3 4.7 pF RF Output 15 C2 14 8.2 pF 13 12 5 RFout GND/NC 2.7 pF L5 6.8 nH GND/NC 22 pF U1 RFin 10 4 C10 100 pF GND/NC 24 GND/NC C9 RFout GND/NC 51 GND/NC GND/NC 9 RF Input C11 GND/NC GND/NC J2 3 C1 100 pF B1 0 Iref GND/NC 2 R2 1000 pF R1 33 nH 0603 L3 0 Vbias 1 C2 C9 GND/NC C14 C3 8 R1 B1 L4 0 U1 C8 C10 L5 C11 C15 100 pF R2 C17 0.1 uF R3 0 L1 C14 C13 C1 L3 L4 R3 C13 11 R6 R7 110 D3 SM05T1G C7 Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 190 mil (9.2 at 940MHz) Distance between center of L5 and U1 device package is 452 mil (21.8 at 940MHz) Distance between center of C2 and U1 device package is 305 mil (14.7 at 940MHz) Distance between center of C9 and U1 device package is 275 mil (13.3 at 940MHz) Data Sheet, August 2020 | Subject to change without notice 8 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Bill of Material-TQP7M9104 Reference Des. Value Description Manuf. Part Number n/a n/a Printed Circuit Board Qorvo 1078282 n/a n/a Printed Circuit Board Qorvo 1078282 D3 n/a Zener, dual, SOT-23 various C9 2.7pF B1, L3, L4, R3 0 Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P Resistor, Chip, 0603, 5%, 1/16W AVX 06035J2R7ABSTR various L5 6.8nH Inductor, 0603, 5% Toko LL1608-FSL6N8 C3 4.7pF Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P AVX 06035J4R7ABSTR C2, C8 8.2pF Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P AVX 06035J8R2ABSTR C10 22pF Capacitor, Chip, 0603, 5%, 50 V, NPO/COG C1, C11, C14, C15 100pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG various L1 18nH Inductor, 1008, 5%, Coilcraft CS Series Coilcraft Capacitor, Chip, 0603, 10%, 50V, NPO/COG various various C17 1000pF C13 0.1F Capacitor, Chip, 0603, 50V, X5R, 10% various C7 10F Capacitor , Tantalum, 6032, 35V, 10% various R2 51 Resistor, Chip, 0603, 5%, 1/16W various R6 220 Resistor, Chip, 0603, 1%, 1/16W various R7 110 Resistor, Chip, 0603, 1%, 1/16W various R1 33nH Inductor, 0603, 5% R8, R4, C12, C4,D3 n/a Toko 1008HQ-18NXJL LL1608-FSL33N Do Not Place Typical Performance: TQP7M9104-PCB900 (920-960MHz) Test conditions unless otherwise noted: VCC=+5 V, ICQ=435mA, IREF=19mA, T=+25C Parameter Frequency Input Return Loss Output Return Loss Output P1dB Output IP3 (+23 dBm/tone, f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR)(1) Units Typical Value 920 -13 -9 +33.9 +45 940 -12 -11.8 +33.8 +45 960 -11 -15 +33.4 +45 MHz dB dB dBm dBm +24 +23.5 +23 dBm Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Data Sheet, August 2020 | Subject to change without notice 9 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) RF Performance Plots: TQP7M9104-PCB900 (920-960MHz) Test conditions unless otherwise noted: VCC=+5 V, Temp=+25C Gain vs. Frequency 22 20 - 40 C +25C +85 C 19 18 0.90 0.92 0.94 -10 0.98 -15 -20 0.90 1.00 0.92 0.94 Frequency (GHz) 34 33 0.95 40 - 40 C +25C +85 C ACLR vs. Output Power -45 22 23 24 25 26 21 23 24 25 26 27 Collector Current vs. Output Power 1,100 1,000 Frequency : 0.94 GHz CW Signal Temp.=+25oC 900 - 40 C +25C +85 C -60 -50 -55 ICC (mA) ACLR (dBm) ACLR (dBm) 22 Output Power / Tone (dBm) Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB at 0.01% Probability 3.84 MHz BW -45 -55 0.96 GHz 0.94 GHz 18 20 22 24 Data Sheet, August 2020 | Subject to change without notice 700 600 500 -65 Output Power (dBm) 800 0.92 GHz -60 -65 16 0.92 GHz 27 ACLR vs. Output Power -40 -50 14 0.94 GHz 40 35 Frequency : 0.94 GHz 12 0.96 GHz 45 Pout / Tone(dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB at 0.01% Probability 3.84 MHz BW 1.00 30 21 Frequency (GHz) -40 0.98 50 45 0.96 0.96 OIP3 vs. Output Power 55 30 0.94 0.94 1MHz Tone Spacing Temp.=+25oC 35 0.93 0.92 Frequency (GHz) 50 35 32 0.92 -20 0.90 1.00 1MHz Tone Spacing OIP3 (dBm) P1dB (dBm) 0.98 OIP3 vs. Pout / Tone 55 +85C +25C -40C 36 0.96 Frequency (GHz) P1dB vs. Temperature 37 -10 -15 0.96 - 40 C +25C +85 C -5 |S22| (dB) 21 Output Return Loss vs. Frequency 0 - 40 C +25C +85 C -5 |S11| (dB) Gain (dB) Input Return Loss vs. Frequency 0 OIP3 (dBm) 23 26 400 12 14 16 18 20 Output Power (dBm) 10 of 17 22 24 26 16 18 20 22 24 26 28 30 32 34 Output Power (dBm) www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Application Circuit: TQP7M9104-PCB2140 (2110-2170MHz) Vcc +5V C7 10 uF 6032 B1 5 C8 6 20 21 22 19 GND/NC GND/NC GND/NC 23 RFin RFout GND/NC GND/NC 7 1.5 pF RFout GND/NC 2.4 pF 22 pF U1 RFin 18 17 C15 22 pF L1 18 nH 0805 16 C3 J3 100 pF RF Output 15 C2 14 2.7 pF 13 12 4 RFout GND/NC C9 GND/NC GND/NC C10 L3 0 GND/NC 10 51 0 C1 100 pF B1 0 GND/NC GND/NC C11 3 1000 pF R1 120 nH 0603 Iref 9 J2 GND/NC 24 2 R2 RF Input C17 Vbias 1 GND/NC C8 100 pF C3 C2 U1 C9 GND/NC GND/NC C14 R2 C10 GND/NC L1 L4 0 11 R1 C13 0.1 uF R3 0 C15 C14 C11 C7 C1 L3 L4 R3 C13 R7 110 D3 SM05T1G 8 R6 R7 R6 220 C17 Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 50 mil (5.5 at 2140MHz) Distance between center of C2 and U1 device package is 113 mil (12.4 at 2140MHz) Distance between center of C9 and U1 device package is 275 mil (30.3 at 2140MHz) Data Sheet, August 2020 | Subject to change without notice 11 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Bill of Material-TQP7M9104-PCB2140 Reference Des. Value Description Manuf. Part Number U1 n/a 2W High Linearity Amplifier Qorvo TQP7M9104 n/a n/a Printed Circuit Board Qorvo 1078282 D3 n/a Zener, dual, SOT-23 various C8 1.5 pF Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P AVX 06035J1R5ABSTR C9 2.4 pF Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P AVX 06035J2R4ABSTR C2 2.7 pF Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P AVX 06035J2R7ABSTR B1, L3, L4, R3, C11 0 Resistor, Chip, 0603, 5%, 1/16W various various C10, C15 22 pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG C1, C14, C3 100 pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG various L1 18 nH Inductor, 1008, 5%, Ceramic Coilcraft Capacitor, Chip, 0603, 10%, 50V, NPO/COG various C17 1000 pF C13 0.1F Capacitor, Chip, 0603, 10%, 50V, X5R various C7 10F Capacitor , Tantalum, 6032, 20 %, 50V various R2 51 Resistor, Chip, 0603, 5%, 1/16W various R6 220 Resistor, Chip, 0603, 1%, 1/16W various R7 110 Resistor, Chip, 0603, 1%, 1/16W various R1 120 nH Inductor, 0603, 5% R8, R4, C12, C4, D3 n/a Toko 1008HQ-18NXJL LL1608-FSR12J Do Not Place Data Sheet, August 2020 | Subject to change without notice 12 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Typical Performance: TQP7M9104-PCB2140 (2110-2170MHz) Test conditions unless otherwise noted: VCC=+5 V, ICQ=435mA, IREF=19mA Parameter Units Typical Value Frequency Gain Input Return Loss Output Return Loss Output P1dB 2110 15.8 -12.4 -8.7 +32.9 2140 15.8 -12.0 -9.5 +32.8 2170 15.8 -11.8 -10.5 +32.8 MHz dB dB dB dBm Output IP3 (+17dBm/tone, f = 1MHz) WCDMA Channel power (at -50dBc ACLR)(1) Noise Figure +49 +23.5 4.4 +49.5 +23.8 4.4 +50 +24.0 4.6 dBm dBm dB Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. RF Performance Plots: TQP7M9104-PCB2140 (2110-2170MHz) Test conditions unless otherwise noted: VCC=+5V, Temp=+25C Gain vs. Frequency 18 0 16 15 - 40C +25C +85C 14 13 2.10 - 40C +25C +85C -5 |S11| (dB) Gain (dB) 17 Input Return Loss vs. Frequency 2.12 2.14 2.16 -10 -15 2.18 -20 2.10 2.20 2.12 0 Output Return Loss vs. Frequency P1dB (dBm) |S22| (dB) 2.18 2.20 +85C +25C -40C 34 -10 -15 -20 2.10 2.16 P1dB vs. Temperature 35 - 40C +25C +85C -5 2.14 Frequency (GHz) Frequency (GHz) 33 32 31 2.12 2.14 2.16 2.18 2.20 Frequency (GHz) Data Sheet, August 2020 | Subject to change without notice 30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency (GHz) 13 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) RF Performance Plots: TQP7M9104-PCB2140 (2110-2170MHz) OIP3 vs. Pout / Tone 55 OIP3 vs. Output Power vs. Frequency 55 1MHz Tone Spacing 1MHz Tone Spacing Temp.=+25oC 50 45 -40C 40 +25C +85C OIP3 (dBm) OIP3 (dBm) 50 35 45 2.17 GHz 2.14 GHz 2.11 GHz 40 35 30 30 13 15 17 19 21 23 25 13 15 17 ACLR vs. Pout / Tone -40 21 23 25 ACLR vs. Output Power -40 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB at 0.01% Probability 3.84 MHz BW -45 19 Output Power / Tone(dBm) Pout / Tone(dBm) Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB at 0.01% Probability 3.84 MHz BW -45 ACLR (dBm) ACLR (dBm) Frequency : 2.14 GHz -50 +85C -55 +25C -50 2.17 GHz -55 2.14 GHz -40C 2.11 GHz -60 -60 -65 -65 17 19 21 23 25 27 17 19 Pout / Tone (dBm) ICC vs. Output Power 1,000 21 23 25 6.0 Noise Figure vs. Frequency Temp.=+25C Temp.=+25oC 5.0 800 NF (dB) Collector Current (mA) Frequency : 2.14 GHz CW Signal 900 27 Output Power (dBm) 700 4.0 600 3.0 500 400 16 18 20 22 24 26 28 30 32 34 2.0 2.11 Data Sheet, August 2020 | Subject to change without notice 2.12 2.13 2.14 2.15 2.16 2.17 Frequency (GHz) Output Power (dBm) 14 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) GND/NC GND/NC 19 20 GND/NC GND/NC 21 22 GND/NC 15 5 14 6 13 GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC GND/NC GND/NC GND/NC GND/NC Iref 12 4 11 16 7 GND/NC 3 10 RFin 17 9 RFin 2 GND/NC GND/NC 18 GND/NC GND/NC 1 8 Vbias 23 24 GND/NC Pin Configuration and Description Backside Paddle - RF/DC Ground Pin No. 1 2, 3, 6,7, 8, 9, 10, 11, 12, 13,17, 19, 20, 21, 22, 23, 24 4, 5 14, 15, 16 18 Backside paddle Symbol VBIAS GND/NC RFIN RFOUT/VCC IREF RF/DC GND Data Sheet, August 2020 | Subject to change without notice Description Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. RF Input. DC voltage present, blocking capacitor required. Requires external match for optimal performance. RF Output. DC Voltage present, blocking cap required. Requires external match for optimal performance. Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance 15 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Package Marking and Dimensions Marking: Part Identifier - 7M9104 Date Code - YYMM Lot code - AaXXXX 6 4.000 24X 0.50 Pitch 24X 0.250.05 TERMINAL #1 IDENTIFIER 7M9104 YYMM AaXXXX 4.000 2.700.05 Exp. DAP 6 Pin #1 IDENTIFIER CHAMFER 0.300 x 45 4 24X 0.400.05 2.50 Ref. R.075 5 2.700.05 Exp. DAP GND/THERMAL PAD .10 C 24X .8500.050 .08 C 5 SEATING PLANE 0.000 0.050 .203 Ref. C Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced plastic very thin fine pitch quad flat no lead package (QFN). 3. Dimension and tolerance formats conform to ASME Y14.4M-1994. 4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. 5. Co-planarity applies to the exposed ground/thermal pad as well as the contact pins. 6. Package body length/width does not include plastic flash protrusion across mold parting line. PCB Mounting Pattern 3 PACKAGE OUTLINE 16X 0.50 PITCH R.19 24X 0.38 0.19 1 24X 0.70 (SOLDER MASK) MINIMUM BACKSIDE THERMAL CONTACT AREA 6 1 2.70 2.70 0.64 0.64 2.70 BACK SIDE COMPONENT SIDE Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10"). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. 5. Place mounting screws near the part to fasten a back side heat sink. 6. Do not apply solder mask to the back side of the PC board in the heat sink contact region. 7. Ensure that the backside via region makes good physical contact with the heat sink. Data Sheet, August 2020 | Subject to change without notice 16 of 17 www.qorvo.com TQP7M9104 2W High-Linearity Amplifier (R) Handling Precautions Parameter Rating Standard ESD-Human Body Model (HBM) Class 1C ESDA/JEDEC JS-001-2012 ESD-Charged Device Model (CDM) Class C3 JEDEC JESD22-C101F MSL-Moisture Sensitivity Level Level 1 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C max. reflow temp.) and tin/lead (245C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Annealed Matte Tin over Copper RoHS Compliance This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: * * * * * * Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com For technical questions and application information: Email: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Data Sheet, August 2020 | Subject to change without notice 17 of 17 www.qorvo.com