Power MegaFETs RFD10N05, RFD10NO5SM N-Channel Enhancement-Mode File Number 2107 Power Field-Effect Transistors (MegaFETs) 10 A, 50 V rps(on) =0.1Q Features: a Single pulse avalanche energy rated = SOA is power-dissipation limited = Nanosecond switching speeds Linear transfer characteristics = High input impedance The RFOIONOS and RFDIONO5SM n-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. These devices were designed for use in applications such as switching regula- tors, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Because of space limitations branding (marking) on type RFD10N05 and on type RFD10NO5SM is D10N05. The RFD10NO5 is supplied in the JEDEC TO-251 plastic package and the RFD10NO5SM is supplied in the JEDEC TO-252 surface-mount plastic package. MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE, Voss ...-----ccccccecceneneeessseeeseee DRAIN-GATE VOLTAGE, Voar (Ros = 1 MQ) GATE-SOURCE VOLTAGE, Vaso... ccc cee cece ence renee ranean eneens DRAIN CURRENT: Jo, RMS Continuous 0.0... cece cece ee eee rete teeter betes Yom, PUIS@d 6... csc cece eect ete treet erence teen eee neneee SINGLE PULSE AVALANCHE ENERGY RATING, Eas* AVALANCHE CURRENT, las oo... 0. secs eee e cece reece een e nn eee POWER DISSIPATION, Pr: AL Tc = 25C ccc eee cee tn cece center tenet ee ee eee Derated above Tc = 25C... cece cece cece eee ete eee teeneeees OPERATING AND STORAGE TEMPERATURE, T), Tats N-GHANNEL ENHANCEMENT MODE o G 92c8-426568 TERMINAL DIAGRAM TERMINAL DESIGNATION a SOURCE mn DAN A GATE TOP VIEW TO-251AA t SOURCE a ~= DRAIN L GATE TOP VIEW TO-252AA 9205-43478 *Von=10 V, starting T=25C, L=2 mH, Rga=50 Q, lpeak=10 A. See Figs. 12 and 13. 4-2 Power MegaFETs RFD10N05, RFD10N05SM ELECTRICAL CHARACTERISTICS, Ait Case Temperature (Tc) = 25C unless otherwise specified. LIMITS RFD10N05 . CHARACTERISTIC TEST CONDITIONS RFD10NOSSM UNITS MIN. | MAX. Drain-Source Breakdown Voltage BVpss Ip=0.25 mA, Voes=0 V 50 = Vv Gate Threshold Voltage Ves(th) Vas=Vos, 1p=0.25 mA 2 4 . Vos=40 V, Vas=0 V _ 1 Zero Gate Voltage Drain Current loss To=150C _ 50 uA Gate-Source Leakage Current less Ves = +20 V, Vos = OV _ 100 nA Static Drain-Source On Resistance fos(on) lb=10 A, Vas=10 V _ 0.1 Q Turn-On Time t(on) ye . = 50 Turn-On Delay Time ta(on) Voo=25 V, lo=5 A [13(typ.) Rise Time t la1=lga=0.2 A 24(typ.) t + _ Turn-Off Delay Time taloff) Ves (cramp) oo V. 0.6 V jaaityp)| " Fall Time tr . = __16(typ.) Turn-Off Time tof (See Figs. 10 and 11) | 100 Ipb=10 A, Voo=40 V, Total Gate Charge Q, (total) R1=4 Q, Vas=15 V 30 ac Gate Charge at 10 V Qy(10) Ves710 V 20 Threshold Gate Charge Q,(th) Ves=2 V = 1.5 Plateau Voltage V(piateau) ln=10 A, Vos=15 V _ 7.5 Vv Ip=5 A, R1=5 Q, L=0.2 wH Turn-Off Energy Loss Per Cycle Fort (gi=tyz=0.2 A _ 8 pd Ves(clamp) +10 V, -0.6 V Thermal Resistance, Junction-to-Case Rgsc = 6.25 C/W Thermal Resistance, Junction-to-Ambient Rgua _ 100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS RFD10N05 T DIT NIT: CHARACTERISTIC EST CONDITIONS RFD1ONOSSM UNITS MIN. | MAX. Diode Forward Voltage Vso Isn=10 A _ 1.5 Vv Reverse Recovery Time ter (-==10 A, dir/de=100 A/us _ 125 ns T= 150C CASE TEMPERATURE t = c 3 Zz < a DRAIN-TO-SOURCE VOLTAGE {Vds)-V SOAMFDPACKCF2 Fig. 1 - Safe-operating-area curve. (Curves must be derated linearly with increase in case temperature.) 4-3 Power MegaFETs RFD10N05, RFD10N05SM i w a < a g 5 3 3 E = a 3 5 5 a a an 3 2 0. 6 a CASE TEMPERATURE (To}-degC CASE TEMPERATURE (TCl-degC IOGEDIONOSCF3 POWMPDPACKCR2 Fig. 2 - Maximum continuous drain current vs temperature. Fig. 3 - Normalized power dissipation vs temperature derating curve. -5SdegC 25degC 180degC PULSE DURATION=80us To=25degC Vds=15V PULSE TEST PULSE DURATION=@0us ft DUTY CYCLE=,5% MAX I g 5 3 2 i 5 16 8 Eb rc Zz 2 49) w 5 12| & z 7 < Oo gc z a 68 z 3 6 f 4 4 Zt ol 25 75 10 DRAIN-TO-SOURCE VOLTAGE (Vds)-V GATE~-TO-SOURCE VOLTAGE (Vgsl-V SATGEDIONOSCF2 VGSGEDIONOSCF2 Fig. 4 - Typical saturation characteristics. Fig. 5 - Typical transfer characteristics. 2 gs=10V Id=10A Ve = Ven a= 250 HA wu ; Q. 5 20 g 3 3 o zz @ 15 oe a cz N Eg Z ws 3 10 & 6 05 3 5} a = c 9 Zz so 0 50 700 ri JUNCTION TEMPERATURE {T)-degC JUNCTION TEMPERATURE {degC ROSMFDPACKCF2 GTHMFDPACKCF2 Fig. 6 - Normalized fos(on): vs junction temperature. Fig. 7 - Typical normalized gate threshold voltage. 4-4 Power MegaFETs Vps VOLTS NORMALIZED ORAIN-TO~SOURCE BREAKDOWN VOLTAGE (8Vdas)-V Id=250uA JUNCTION TEMPERATURE {Tj degC BYDSSMFDPACKCF2 Fig. 8 - Drain source breakdown voitage vs temperature. 50 37.5 12.5 0 ig (act) Ry = 52 tg(REF) = 0.30 mA Veg =10V GATE SOURCE VOLTAGE Vpp = Voss Vop = Voss on 5 1 0.75 Voss 0.75 Voss > 2 0.50 Voss 0.50 Voss// > 0.25 Voss 0.25 Voss DRAIN SOURCE VOLTAGE Ig (REF) ig (REF) 80 5 ach TIME MICROSECONDS 92cS- 42ge2 Fig. 10 - Normalized switching waveforms for constant gate-current. Vas= tov] VARY ty TO OBTAIN Requiht DUT (Refer to RCA application notes AN7254 and AN7260.) ED PEAK I 9205-42659 Fig. 12 - Unclamped energy test circuit. CAPACITANCE (Cl-pt ton boa tdfoa} + talott}ol tr 90% vos 10% Igt- GATE CURRENT 10 Ig2-- - - ~ RFD10N05, RFD10NO5SM CRSS. css Coss FREQUENCY (f=1MHz SOURCE~TO-DRAIN VOLTAGE (Vsd)}-V CAPMFOPACKCF2 Fig. 9 - Typical capacitance vs voltage. Re Vos | DUT . To, *I6p 10V INS52408] SWITCHING TEST CIRCUIT SWITCHING WAVEFORMS 92CS-42922 Fig. 11 - Resistive switching. 92C$-42660 Fig. 13 - Unclamped energy waveforms.