Rugged Power MOSFETs File Number 1993 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V~100V fps(on) = 0.18Q and 0.25Q Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF530R, IRF531AR, IRF532R and IRF533R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AE plastic package. Absolute Maximum Ratings IRF530R, IRF531R, IRF532R, IRF533R N-CHANNEL ENHANCEMENT MODE Oo 920S-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION ~ SOURCE | dt es = onan Oo}. === = TOP VIEW 92CS-39526 JEDEC TO-220AB Parameter IRF530R | IRF531R | IRF532R | IRF533R | Units Vos Drain - Source Voltage @ 100 60 100 60 V Voar Drain - Gate Voltage (Ras = 20 KO) 100 60 100 60 Vv lop @ Tc = 26C Continuous Drain Current 14 14 12 12 A Ip @ Tc = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A Jom Pulsed Drain Current @ 56 56 48 48 A Vas Gate - Source Voltage +20 Vv Po @ Te = 26C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) Ww/C Eas Single Pulse Avalanche Energy Rating @ 69 mj ve Qperatng Junction an ge 510 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-87Rugged Power MOSFETs IRF530R, IRF531R , IRF532R, IRF533R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min, | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF530R _ i = IRF532R | 100 Vs | Ves = OV IRF531R = IRF533R 60 _ =- lp = 250uA Vasu Gate Threshold Voltage ALL 2.0 = 40 Vos = Vas, lo = 2504 A loss Gate-Source Leakage Forward ALL = = $00 nA Ves = 20V less Gate-Source Leakage Reverse ALL = = -500 nA Vas = -20V loss Zero Gate Voltage Drain Current _ = 250 HA Vos = Max. Rating, Ves = 0V ALL | 1000 | A | Vos = Max. Rating x 0.8, Vas = OV, Te = 125C Intom == On-State Drain Current @ IRF53OR | 44 _ _ A IRF531R Vos > Ioten X Roston) max, Ves = 10V IRF532R | 45 _ _ A IRF33R Rosion Static Drain-Source On-State IRF530R . _ 0.14 0.18 2 Resistance @ ween Ves = 10V, In = 8.0A IRF533R _ 0.20 0.25 Q Qts Forward Transconductance @ ALL 4.0 55 = S (0) | Vos > Ipion X Rosionimax, Ip = 8.0A Cie Input Capacitance ALL = 600 _ pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _ 300 = peE See Fig. 10 Cras Reverse Transfer Capacitance ALL _ 100 pF tatont Turn-On Delay Time ALL = = 30 ns Von = 36V, Ip = 8.0A, Zo = 150 t Rise Time ALL = _ 75 ns See Fig. 17 tacon Turn-Off Delay Time ALL ~ 40 ns (MOSFET switching times are essentially t Fall Time ALL _ _ 45 ns independent of operating temperature.) Qs, Total Gate Charge ALL _ 18 30 nc Ves = 10V, ln = 18A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL _ 90 = nc essentially independent of operating Qga___Gate-Drain (Miller) Charge ALL 90 = nc_| temperature.) Lo Internal Drain Inductance _ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL 45 _ nH | Measured from the inductances. drain jead, 6mm (0.25 o in.) from package to center of die. Lo Ls Internal Source Inductance ALL _ 75 nH Measured from the s source lead, 6mm Ls (0.25 in.) from package to source s bonding pad. 92CS- 42463 Thermal Resistance RinJC _ Junction-to-Case ALL = _ 1.67_ | C/W RwCS Case-to-Sink ALL = 1.0 _ C/W _| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF530R | _ 14 A Modified MOSFET symbol (Body Diode) IRF531R showing the integral IRF532R 2 A reverse P-N junction rectifier. 8 IRF533R | ~ ts Pulse Source Current IRF530R | __ _ 56 A 6 (Body Diode) @ iRF531R IRF532R IRF533R _ _ 48 A azcs-azese Vsp Diode Forward Voltage @ IRFS30R | _ = = = IRF531R 2.5 Vv | Te = 25C, Is = 14A, Ves = OV IRF532R _ _ _ IRF533R _ _ 2.3 v Te = 25C, ts = 12A, Vas = OV tre Reverse Recovery Time ALL ~ 360 = ns Ty = 150C, Ir = 14A, dle/dt = 100A/pys Qar Reverse Recovered Charge ALL = 2.1 = ue Ty = 150C, le = 14A, die/dt = 100A/yus ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 25V, starting T, = 25C, L == 530uH, Ros = 252, Ineak = 14A. See figures 15, 16. 6-88Rugged Power MOSFETs IRF530R, IRF531R , IRF532R, IRF533R 20 ws PULSE ws PULSE Vos > 'p(on) * 16 a a 8 2 = = & = 2 z = 12 = 5 5 = = = = = a = = 5 > 3 3 z 8 z = = = = S 6 o a 7 7 y ze 4 Ty = 25C Ty? 0 10 20 ct] a0 50 0 2 4 6 a 10 Vos, DRAIN TO SQUACE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Vas. GATE TO SOURCE VOLTAGE (VOLTS! Fig. 2 Typical Transfer Characteristics ta BY Rosion) 80 us PULSE TEST IRFS32R, 8 a 3 a 8 = = 2 = = = a? = 6 z 5 3 z & S x x = > 2 oS z4 z = = S a 2 Te 26%C : Ty wso%C MAX 5 oy yt the 2 Rinse 167CW , , s4t tbe 1 Pp E i SINGLE PULSE boigg | Vl IRFS1A, 3R IRF53OR, 2R_ f+ 0 ga 08 12 16 20 10 2 5 10 20 50 100 200 $00 Vos. ORAIN TO SOURCE VOLTAGE 1VOLTS) Fig. 3 Typical Saturation Characteristics E (PER UNET) Znscl/ Rene, NORMALIZED EFFECTIVE TRANSIENT Vos DRAIN TO SOURCE VOLTAGE VOLTS) Fig. 4 Maximum Safe Operating Area =z 02 Ss = 201 Z Z 005 SINGLE PULSE {TRANSIENT 1 v OUTY FACTOR. D= = THERMAL [MPE DANCE! 0 cTor. D 12 10 2 PER UNIT BASE = Ringe = 167 0G CW 3 Tym - To * Pom Zins) aor wo 2 5 4 2 ot 2 5 122 5 wl = 2 6 10 2 5 10 ty. SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRFS3OR, IRF531R, IRF532R, IRF533R Tye Ty 2 2500. _. Tye ts. TRANSCONDUCTANCE (SIEMENS) Vos > 'pton) * Boston) max. 40 us PULSE TEST 0 5 1 15 20 (p, QRAIN CURRENT {AMPERES} Fig. 6 Typical Transconductance Vs. Drain Current BVog5, QRAIN-TO-SOURCE BREAKGOWN VOLTAGE (NORMALIZED) C CAPACITANCE ink i Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 125 VAS 095 08s ars ~40 Q 40 a0 120 Ty. JUNCTION TEMPERATURE (OC) Fig. 8 Breakdown Voltage Vs. Temperature 2000 ssn a ae ie l . 1 : i "vgs 0 bo RR tr 4 eye + Ft Cag = Cyr + Cg. Coe SHORTED Sees * Soe | Coe Cya fom" Coe tye Cys = Cgy+ Cpa + + + 4 ribs tote ft a i - , | Cass tof ot Voy DRAIN TO SOURCE VOLTAGE WWOLTSI 160 Ign. REVERSE DRAIN CURRENT (AMPERES) Fig. Rigsion) ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Fig. Ty = 19090 Ty = 2500 a 1 2 3 Vgp, SGURCE TG-DRAIN VOLTAGE (VOLTS) 7 Typical Source-Drain Diode Forward Voltage Ty, JUNCTION TEMPERATURE (C) 9 Normalized On-Resistance Vs. Temperature vgs GATE TO SOURCE VOLTAGE VOLTS) 3 : ud abit Vg + 20V ' T fo Lt tgs so = ' ~. Vos = 80V, IRF530A, 532R FOR TEST CIRCUIT i | | | SEE FIGURE 18 + a Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage a 16 Za 32 40 Qy TOTAL GATE CHAAGE (nC)Rugged Power MOSFETs IRF530R, IRF531R, (RF532R, IRF533R 20 06 ] g a MEASURED WITH CURRENT PULSE OF 2 BSton} vt 3 2.0 us DURATION. INITIAL Ty = 25C. (HEATING & (05 F EFFECT OF 2.0 ys PULSE 15 MINIMAL.) 16 3 z _ 5 2 2B 04 = 2 v = 10V a Ss gs = IRFS3OR, 531A, ws a 2 03 < 3 3 3 z had < Zz 02 7 4 S z - 4 - 2 2 adeno] a 201 Vgg = 20V a " | 7 9 10 20 30 40 50 60 26 50 75 100 128 150 Ip. DRAIN CURRENT (AMPERESH Tc, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Orain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 80 rof- \ - 44 Vos a Mf ape ef ff tH L e Eg N VARY tp TO OBTAIN bur 3 N\ REQUIRED PEAK IL + =a +- - socnpenesmeb oo maofond Res -Ypp g 5 . ; : 30 - + Ves rov f Fe] 2 0.012 3 ~ we - 0 \ 92CS ~~ 42659 \ Fig. 18 Unclamped Energy Test Circuit Q 20 ag 60 60 10 120 4g Tr, CASE TEMPERATURE (9C):- Fig. 14 Power Vs. Temperature Derating Curve Vp = 36V PRE * 1 kHz tottus Vo TO SCOPE | ' I 4a I 20V i oa ~ = ES 9208-42724 Fig. 17 Switching Time Test Circuit *Yos CURRENT (SOLATED REGULATOR SUPPLY) [ SAME TYPE ev 7 O2ut SO KL? ASOuT a BATTERY I | 15 ma 0 cone O -Yos 'G 10 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-91