IXTH110N10L2 - LITTELFUSE - Datasheet.Cloud

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 110 A

IDM TC= 25°C, Pulse Width Limited by TJM 300 A

IATC= 25°C 110 A

EAS TC= 25°C 3 J

PDTC= 25°C 600 W

TJ -55 to +150 °C

TJM +150 °C

Tstg -55 to +150 °C

TL1.6mm (0.063in) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

TO-268 4.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 100 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V 5 μA

TJ = 125°C 50 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 18 mΩ

LinearL2TM Power

MOSFET w/ Extended

FBSOA

IXTH110N10L2

IXTT110N10L2

DS100235(01/10)

VDSS = 100V

ID25 = 110A

RDS(on) ≤≤

≤≤

≤ 18mΩΩ

ΩΩ

Ω

Advance Technical Information

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

Features

zDesigned for Linear Operation

zInternational Standard Packages

zAvalanche Rated

zIntegrated Gate Resistor for Easy

Paralleling

zGuaranteed FBSOA at 75°C

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zSolid State Circuit Breakers

zSoft Start Controls

zLinear Amplifiers

zProgrammable Loads

zCurrent Regulators

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

TO-268 (IXTT)

G

SD (Tab)

S

G

D (Tab)

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH110N10L2

IXTT110N10L2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 45 55 65 S

Ciss 10.5 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1585 pF

Crss 420 pF

RGi Gate Input Resistance 1.8 Ω

td(on) 28 ns

tr 130 ns

td(off) 99 ns

tf 24 ns

Qg(on) 260 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC

Qgd 106 nC

RthJC 0.21 °C/W

RthCS TO-247 0.21 °C/W

Safe Operating Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA VDS = 80V, ID = 3.6A, TC = 75°C, tp = 5s 360 W

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2.2Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

e

∅ P

TO-247 (IXTH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXTT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 110 A

ISM Repetitive, Pulse Width Limited by TJM 440 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 230 ns

IRM 19.4 A

QRM 2.2 μC

IF = 55A, -di/dt = 100A/μs,

VR = 50V, VGS = 0V

IXTH110N10L2

IXTT110N10L2

Fi g . 1. Ou tp ut C har acter i stics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

DS

- Volts

I

D

- Ampe res

V

GS

= 20V

14V

12V

10V

8

V

6

V

Fi g . 2. Exte n d ed Ou tpu t Ch ar acter i s ti cs @ T

J

= 25ºC

0

50

100

150

200

250

300

0 2 4 6 8 101214161820

V

DS

- V o lt s

I

D

- Ampe res

V

GS

= 20V

14V

12V

6

V

10

V

8

V

Fi g . 3. Ou tpu t C har acter i st i cs @ T

J

= 125º C

0

10

20

30

40

50

60

70

80

90

100

110

0 0.5 1 1.5 2 2.5 3 3.5 4

V

DS

- Volts

I

D

- A mperes

5

V

8V

6V

V

GS

= 20V

14V

12V

10V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Valu e vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50-250 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Valu e vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

0 50 100 150 200 250 300

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V

20V

- - - -

T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maxi mu m D r ai n C ur r en t v s.

Case Temp er atur e

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH110N10L2

IXTT110N10L2

Fig. 7. Input Admi ttance

0

20

40

60

80

100

120

140

160

180

200

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

90

100

0 20 40 60 80 100 120 140 160 180 200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

40

80

120

160

200

240

280

320

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

V

SD

- V o lt s

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300 350 400

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 50V

I

D

= 55A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capa citance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maxi mu m T r an si en t Ther mal I mp ed an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTH110N10L2

IXTT110N10L2

Fig. 13. Forward-Bias Safe Operating Area

@ T

C

= 25ºC

1

10

100

1,000

110100

V

DS

- Volt s

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

10ms

1ms

R

DS(on)

Limit

100ms

DC

25µs

Fig . 14. F or w ar d -Bi as Safe Op er a ti ng Are a

@ T

C

= 75ºC

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 75ºC

Single Pulse

100µs

10ms

1ms

R

DS(on)

Limit

100ms

DC

25µs

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