Power Transistors 2N1539 thru 2N1548 (continued) BASE CURRENT versus EMITTER BASE VOLTAGE DC CURRENT GAIN versus COLLECTOR CURRENT Vee = 2 Ver = 2V z Be 2N1539-2N1543 z = = 2N1544-2N1548 = 2N1544-2N1548 3 2N1539-2N1543 0 01 0.2 0.3 0.4 05 06 0 1 2 3 4 5 Ves, EMITTER-BASE VOLTAGE (VOLTS) Ie, COLLECTOR CURRENT (AMP) 2N1549, A thro 2N1560, A (Germanium Ves = 40-100 V 2N1549A JAN thru 2N1556A JAN c = pew >= 2N1560A JAN AVAILABLE) PNP germanium power transistors for switching and CASE 3,4 amplifier applications in high-reliability equipment. (TO-3, 41) For units with solder lugs attached, specify devices MP1549A etc. (TO-41 package) MAXIMUM RATINGS Apply to corresponding "Hi-Rel" Series Also pat symbot | Sai] aie MUR] tin mbo 4] 2N15 nits 9 Y 2N1557 | 2N1558/ 2N1559 | 2N1560 Collector-Emitter Voltage Vorx 40 60 80 100 Vde Collector-Emitter Voltage Vors+ 30 45 60 75 Vde Collector-Emitter Voltage Voro+ 20 30 40 50 Vdc Coliector-Base Voltage Vos 40 60 80 100 Vde Emitter-Base Voltage Vip 20 30 40 50 Vde Collector Current (Continuous) In 15 15 15 15 Amp Collector Current (Peak) In 20 20 20 20 Amp Collector Junction Temperature Ty -65 to +110 Sc Collector Dissipation Py 106 106 106 106 Watts (25 C Case Temp. ) Thermal Resistance 83 0.8 Cc/w *To avoid excessive heating of collector junction, perform this test with a sweep methad. 7-67