MMA040AA Datasheet DC-28 GHz GaAs MMIC Distributed Amplifier DC-28 GHz GaAs MMIC Distributed Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. (c)2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 2 DC-28 GHz GaAs MMIC Distributed Amplifier Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 2.0 Revision 2.0 was the first publication of this document. 3 DC-28 GHz GaAs MMIC Distributed Amplifier Contents Revision History.............................................................................................................................. 3 1.1 Revision 2.0 ................................................................................................................................................ 3 2 Product Overview .................................................................................................................... 7 2.1 Functional Block Diagram .......................................................................................................................... 7 2.2 Applications ............................................................................................................................................... 7 2.3 Key Features............................................................................................................................................... 7 3 Electrical Specifications ............................................................................................................ 8 3.1 Absolute Maximum Ratings ....................................................................................................................... 8 3.2 Typical Electrical Performance ................................................................................................................... 9 3.3 Typical Performance Curves ..................................................................................................................... 10 4 Chip Outline Drawing, Die Packaging, Bond Pad, and Assembly Information ....................... 18 4.1 Chip Outline Drawing ............................................................................................................................... 18 4.2 Die Packaging Information ....................................................................................................................... 18 4.3 Bond Pad Information .............................................................................................................................. 19 4.4 Assembly Drawing.................................................................................................................................... 20 5 Handling and Die Attachment Recommendations................................................................. 21 6 Ordering Information ............................................................................................................. 22 4 DC-28 GHz GaAs MMIC Distributed Amplifier List of Figures Figure 1 Functional Block Diagram .............................................................................................................................. 7 Figure 2 Broadband Gain(VDD = 8 V, IDD = 60mA, T = 25 C .......................................................................................... 10 Figure 3 Broadband Gain vs Temperature (VDD = 8 V, IDD = 60mA) ............................................................................ 10 Figure 4 Gain vs. VDD (IDD = 60 mA, T = 25 C) ......................................................................................................... 11 Figure 5 Gain vs. IDD (VDD = 8 V, T = 25 C)............................................................................................................... 11 Figure 6 Input Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 C) ................................................................................ 12 5 DC-28 GHz GaAs MMIC Distributed Amplifier List of Tables Table 1 Absolute Maximum Ratings ............................................................................................................................ 8 Table 2 Typical Electrical Performance .......................................................................................................................... 9 Table 3 Die Packaging Information .............................................................................................................................. 18 Table 4 Bond Pad Information ..................................................................................................................................... 19 Table 5 Bias Sequence ................................................................................................................................................. 20 Table 6 Ordering Information ...................................................................................................................................... 22 6 DC-28 GHz GaAs MMIC Distributed Amplifier 2 Product Overview MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure, and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features compact die size and I/Os that are internally matched to 50 , facilitating easy integration into multi-chip modules (MCMs). 2.1 Functional Block Diagram The following illustration shows the primary functional blocks of the MMA040AA device. Figure 1 Functional Block Diagram 2.2 Applications The MMA040AA device is designed for the following applications: * Test instrumentation * Telecom infrastructure * Microwave radio and VSAT * Microwave communications 2.3 Key Features The following are key features of the MMA040AA device: * Frequency range: DC to 28 GHz * Flat gain: 16.5 dB * High IP3: 27 dBm * Low noise: 2.5 dB at 10 GHz * Supply voltage: 7 V at 60 mA * 50 matched I/O * Compact die size: 3 mm x 1.32 mm x 0.1 mm 7 DC-28 GHz GaAs MMIC Distributed Amplifier 3 Electrical Specifications 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings at 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Parameter Rating Storage temperature Operating temperature Drain bias voltage, (VD) Gate bias voltages, (VG1 and VG2) VD current (IDD) RF input power DC power dissipation (T = 85 C) Channel temperature Thermal impedance -65 to 150 C -55 to 85 C 9V -2 to 0.5 V 300 mA 22 dBm 1.1 W 150 C 60 C/W 8 DC-28 GHz GaAs MMIC Distributed Amplifier 3.2 Typical Electrical Performance The following table shows the typical electrical characteristics of the MMA040AA device at 25 C, where VDD is 8 V and IDD is 60 mA. All measurements are derived from the RF probed die according to the assembly diagram shown in section 4.4, unless otherwise noted. Table 2 Typical Electrical Performance Parameter Frequency Range Operational frequency range Gain Gain flatness Gain variation over temperature Noise figure Input return loss Output return loss P1dB Psat OIP3 Min Typ DC Max Units 28 GHz DC-6 GHz 15.5 16.5 dB 6 GHz-12 GHz 15.5 16.5 dB 12 GHz-20 GHz 15 16 dB DC-6 GHz 0.2 dB 6 GHz-12 GHz 0.2 dB 12 GHz-20 GHz 0.2 dB DC-6 GHz 0.007 dB/C 6 GHz-12 GHz 0.007 dB/C 12 GHz-20 GHz 0.007 dB/C DC-6 GHz 2.5 3 dB 6 GHz-12 GHz 2 2.5 dB 12 GHz-20 GHz 3 3.5 dB DC-6 GHz 15 dB 6 GHz-12 GHz 15 dB 12 GHz-20 GHz 12 dB DC-6 GHz 12 dB 6 GHz-12 GHz 15 dB 12 GHz-20 GHz 18 dB DC-6 GHz 15 16 dBm 6 GHz-12 GHz 15.5 16 dBm 12 GHz-20 GHz 14 15 dBm DC-6 GHz 17 dBm 6 GHz-12 GHz 18 dBm 12 GHz-20 GHz 17 dBm DC-6 GHz 27 dBm 6 GHz-12 GHz 27 dBm 12 GHz-20 GHz 27.5 dBm VDD (drain voltage supply) 8 V IDD (drain current) 60 mA 9 DC-28 GHz GaAs MMIC Distributed Amplifier 3.3 Typical Performance Curves The following graphs show the typical performance curves of the MMA040AA device at 25 C, unless otherwise indicated. Figure 2 Broadband Gain(VDD = 8 V, IDD = 60mA, T = 25 C Figure 3 Broadband Gain vs Temperature (VDD = 8 V, IDD = 60mA) 10 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 4 Gain vs. VDD (IDD = 60 mA, T = 25 C) Figure 5 Gain vs. IDD (VDD = 8 V, T = 25 C) 11 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 6 Input Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 C) Figure 7 Input Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA) 12 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 9 Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA) Figure 10 Noise Figure vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 C) 13 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 11 Noise Figure vs. VDD (IDD = 60 mA, T = 25 C) Figure 12 Noise Figure vs. IDD (VDD = 6 V, T = 25 C) 14 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 13 P1dB Output Power vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 C) Figure 14 P1dB Output Power vs. VDD (IDD = 60 mA, T = 25 C) 15 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 15 P1dB Output Power vs. IDD (VDD = 8 V, T = 25 C) Figure 16 Output IP3 vs. Temperature (VDD = 8 V, IDD = 60 mA) 16 DC-28 GHz GaAs MMIC Distributed Amplifier Figure 17 Output IP3 vs. VDD (IDD = 60 mA, T = 25 C) Figure 18 Output IP3 vs. IDD (VDD = 8 V, T = 25 C) 17 DC-28 GHz GaAs MMIC Distributed Amplifier 4 Chip Outline Drawing, Die Packaging, Bond Pad, and Assembly Information 4.1 Chip Outline Drawing The following illustration shows the chip outline of the MMA040AA device. Dimensions are in m and are relative to the zero datum locations shown in the drawing. The minimum bond pad size is 100 m x 100 m. Both the bond pad surface and the backside metal are 3 m gold. The die thickness is 100 m. The backside is the DC/RF ground. The airbridge keep out region is in crosshatch, and the unlabeled pads should not be bonded. Figure 19 Outline Drawing 4.2 Die Packaging Information The following table shows the chip outline of the MMA040AA device. For additional packaging information, contact your Microsemi sales representative. Table 3 Die Packaging Information Standard Format Option Format Waffle Pack Gel Pack 50-100 pieces per pack 50 pieces per pack 18 DC-28 GHz GaAs MMIC Distributed Amplifier 4.3 Bond Pad Information The following table shows the bond pad information of the MMA040AA device. Table 4 Bond Pad Information Bond Pad Number Bond Pad Name Description 2 RFIN This pad is DC-coupled and matched to 50 . 9 RFOUT + VDD (optional) This pin is matched to 50 and can be used to bias VDD. 14 VG1 4, 5, 6 VD1, VD1A, VD1B 11, 12 VG1A, VG1B 1, 3, 7, 8, 10, 13 GND Gate control for amplifier. Adjust to achieve IDD = 60 mA. Low-frequency termination. Connect bypass capacitors per application circuit below. (no bias necessary) Low-frequency termination. Connect bypass capacitors per application circuit below. (no bias necessary) Die bottom must be connected to RF/DC ground. Backside Paddle RF/DC GND RF/DC ground. 19 DC-28 GHz GaAs MMIC Distributed Amplifier 4.4 Assembly Drawing The following figure shows the assembly diagram of the MMA040AA device. In the die test assembly shown, both RFIN and RFOUT ports should utilize bias tees or DC blocks to isolate external circuits from the IC. VDD to the MMA040AA die is supplied through DC bypass caps of >10 nF (the actual value depends on the low-frequency bandwidth requirements of the application). Figure 20 Assembly Diagram Table 5 Bias Sequence Bias Sequence 1) Set the gate voltage VG1 to -1V 2) Set drain voltage VDD to 8V 3) Adjust the gate voltage until the drain current is 60mA 20 DC-28 GHz GaAs MMIC Distributed Amplifier 5 Handling and Die Attachment Recommendations Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. It is recommended to follow all procedures and guidelines outlined in the Microsemi application note AN01 GaAs MMIC Handling and Die Attach Recommendations. 21 DC-28 GHz GaAs MMIC Distributed Amplifier 6 Ordering Information The following table shows the ordering information for the MMA040AA device. Table 6 Ordering Information Part Number Package MMA040AA Die 22