Rev.4.00 Sep 07, 2005 page 1 of 11
HAT3008R, HAT3008RJ
Silicon N / P Channel Power MOS FET
High Speed Power Switching REJ03G1198-0400
(Previous : AD E- 208-5 36 B)
Rev.4.00
Sep 07, 2005
Features
• For Automotive Applicatio n (at Type Code “J”)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
G
D
S
D
G
D
S
D
Nch Pch
1
2
78
4
56
3
1234
5
6
7
8
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 2 of 11
Absolute Maximum Ratings
(Ta = 25°C)
Value
Item Symbol
Nch Pch Unit
Drain to source voltage VDSS 60 –60 V
Gate to source voltage VGSS ±20 ±20 V
Drain current ID 5 –3.5 A
Drain peak current ID (pulse) Note 1 40 –28 A
Body-drain diode reverse drain current IDR 5 –3.5 A
HAT3008R — — — Avalanche current HAT3008RJ IAP Note 4 5 –3.5 A
HAT3008R — — — Avalanche energy HAT3008RJ EAR Note 4 2.14 1.05 mJ
Channel dissipation Pch Note 2 2 2 W
Channel dissipation Pch Note 3 3 3 W
Channel temperature Tch 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
N Channel
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
HAT3008R IDSS — — 1 µA Zero gate voltage drain
current HAT3008RJ IDSS — — 0.1 µA VDS = 60 V, VGS = 0
HAT3008R IDSS — — — µA Zero gate voltage drain
current HAT3008RJ IDSS — — 10 µA VDS = 48 V, VGS = 0
Ta = 125°C
Gate to source cutoff volta ge VGS (off) 1.2 — 2.2 V VDS = 10 V, ID = 1 mA
RDS (on) — 0.043 0.058 Ω I
D = 3 A, VGS = 10 V Note 5 Static drain to source on state resistance RDS (on) — 0.056 0.084 Ω I
D = 3 A, VGS = 4 V Note 5
Forward transfer admittance |yfs| 6 9 — S ID = 3 A, VDS = 10 V Note 5
Input capacitance Ciss — 520 — pF
Output capacitance Coss — 270 — pF
Reverse transfer capacitance Crss — 100 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 11 — ns
Rise time tr — 40 — ns
Turn-off delay time td (off) — 110 — ns
Fall time tf — 80 — ns
VGS = 10 V, ID = 3 A
VDD ≅ 30 V
Body-drain diode forward voltage VDF — 0.84 1.1 V IF = 5 A, VGS = 0 Note 5
Body-drain diode reverse recovery time trr — 40 — ns IF = 5 A, VGS = 0
diF/dt = 50 A/µs
Note: 5. Pulse test
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 3 of 11
P Channel
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
HAT3008R IDSS — — –1 µA Zero gate voltage drain
current HAT3008RJ IDSS — — –0.1 µA VDS = –60 V, VGS = 0
HAT3008R IDSS — — — µA Zero gate voltage drain
current HAT3008RJ IDSS — — –10 µA VDS = –48 V, VGS = 0
Ta = 125°C
Gate to source cutoff volta ge VGS (off) –1.2 — –2.2 V VDS = –10 V, ID = –1 mA
RDS (on) — 0.12 0.15 Ω I
D = –2 A, VGS = –10 V Note 6 Static drain to source on state resistance RDS (on) — 0.16 0.23 Ω I
D = –2 A, VGS = –4 V Note 6
Forward transfer admittance |yfs| 3 4.5 — S ID = –2 A, VDS = –10 V Note 6
Input capacitance Ciss — 600 — pF
Output capacitance Coss — 290 — pF
Reverse transfer capacitance Crss — 75 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 11 — ns
Rise time tr — 30 — ns
Turn-off delay time td (off) — 100 — ns
Fall time tf — 55 — ns
VGS = –10 V, ID = –2 A
VDD ≅ –30 V
Body-drain diode forward voltage VDF — –0.98 –1.28 V IF = –3.5 A, VGS = 0 Note 6
Body-drain diode reverse recovery time trr — 70 — ns IF = –3.5 A, VGS = 0
diF/dt = 50 A/µs
Note: 6. Pulse test
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 4 of 11
Main Characteristics
N Channel
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
4.0
0
1.0
2.0
3.0
0 50 100 150 200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
10
0
2
4
6
8
0246 810
2.5 V
3 V
3.5 V
V
GS
= 2 V
10
0
2
4
6
8
012345
Operation in
this area is
limited by R
DS (on)
Pulse Test V
DS
= 10 V
Pulse Test
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Gate to Source Voltage VGS (V)
Drain to Source Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0
0.1
0.2
0.3
0.4
048121620
2 A
1 A
I
D
= 5 A
0.1 0.3 1 3 10 30 100
1.0
0.5
0.2
0.05
0.1
0.02
0.01
Pulse Test
–25°C
Tc = 75°C
2 Drive Operation
1 Drive Operation
10 V
10 V
V
GS
= 4 V
Pulse Test
Ta = 25°C
1 shot Pulse
PW = 10 ms (1 shot)
1 ms
100 µs
DC Operation (PW ≤ 10 s)
Note 7
10 µs
4 V
25°C
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 5 of 11
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.04
0.08
0.12
–40 0 40 80 120 160
0
I
D
= 5 A
1 A, 2 A, 5 A
10 V
V
GS
= 4 V
0.1 0.2 0.5 1 2 5 10
50
20
5
10
2
0.5
1
Pulse Test
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
0.1 0.2 0.5 1 2 5 10
500
200
100
20
50
10
5
01020304050
2000
1000
500
200
100
50
20
10
100
0
20
40
60
80
0
20
816243240
0
4
8
12
16
V
GS
V
DS
I
D
= 5 A
V
DD
= 10 V
25 V
50 V
V
DD
= 50 V
25 V
10 V
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
1 A, 2 A
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
100
300
10
3
0.1 0.2 1 1020.5
1000
30
5
1
25°C
Tc = –25°C
75°C
V
DS
= 10 V
Pulse Test
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
tr
td(on)
td(off)
tf
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty ≤ 1 %
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 6 of 11
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= 5 A
V
DD
= 25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
10
0
2
4
6
8
0 0.4 0.8 1.2 1.6 2.0
Pulse Test
5 V
V
GS
= 0, –5 V
10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
EAR = • L • IAP2 •
2
1VDSS
VDSS – VDD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
L
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V 50 Ω
R
L
Vout
Monitor
V
DD
= 30 V
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 7 of 11
P Channel
4.0
1.0
0
2.0
3.0
0
Channel Dissipation Pch (W)
50 100 150 200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
–0.1
–100
–10
–1
–0.1
–0.01 –0.3 –1 –3 –10 –30 –100
–30
–3
–0.3
–0.03
Operation in
this area is
limited by R
DS (on)
Ta = 25°C
1 shot pulse
–10
–8
–6
0
–2
–4
0
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
–3 V
Pulse Test
–3.5 V
–2 –4 –6 –8 –10
–10
0
–2
–4
–6
–8
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
–1 –2 –3 –4 –5
Tc = 75°C
–25°C
25°C
V
DS
= 10 V
Pulse Test
Note 8:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
–4 –8 –12 –16 –20
Pulse Test
I
D
= –2 A
–1 A
–0.5 A
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.02
0.05
0.01 –100–0.1 –0.3 –1 –3 –10 –30
100 µs
Note 8
1 ms
PW = 10 ms
DC Operation (PW ≤ 10 s)
V
GS
= –2.5 V
–10 V
–5 V
10 µs
2 Drive Operation
1 Drive Operation
–10 V
V
GS
= –4 V
Pulse Test
–4 V
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 8 of 11
0.5
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–10 V
–1 A
–0.5 A
V
GS
= –4 V
–2 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
20
10
2
5
1
0.2
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –5 –10
500
200
100
20
50
10
5
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
20
50
10
0
0
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
816243240
V
DS
V
GS
I
D
= –3.5 A
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
–0.5 A, –1 A
I
D
= –2 A
Ciss
Coss
Crss
1000
300
100
10
30
3
1–0.2 –0.5 –1 –2 –5 –10
–0.1
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
tf
trtd(on)
td(off)
V
GS
= 0
f = 1 MHz
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty ≤ 1 %
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 9 of 11
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= –3.5 A
V
DD
= –25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
–10
0
–2
–4
–6
–8
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
5 V
V
GS
= 0, 5 V
10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
–
15 V
L
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
–10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –30 V
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 10 of 11
Common
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
HAT3008R, HAT3008RJ
Rev.4.00 Sep 07, 2005 page 11 of 11
Package Dimensions
P-SOP8-3.95 × 4.9-1.27 0.085g
MASS[Typ.]
FP-8DAVPRSP0008DD-D
RENESAS CodeJEITA Package Code Package Name
A
85
14
F
b
p
c
Detail F
Terminal cross section
1.27
1.08
0.40
L
1
0.60
0.25x
0.460.400.34
0.10
b
p
b
1
c
1
0.250.200.15
MaxNomMin
Dimension in Millimeters
Symbol
Reference
5.34.90D
3.95E
0.14
A
2
6.206.105.80
0.25
1.75
A
0.75Z
L
8
°
0
°
c
1.27e
0.1y
H
E
A
1
D
*
1
*
2
E
H
E
*
3
xM
b
p
e
Z(Ni/Pd/Au plating)
2.
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Index mark
A
1
L
1
L
Detail F
y
Ordering Information
Part Name Quantity Shipping Container
HAT3008R-EL-E 2500 pcs Taping
HAT3008RJ-EL-E 2500 pcs Taping
Note: For some grades, production may be te rminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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