HAT3008R, HAT3008RJ Silicon N / P Channel Power MOS FET High Speed Power Switching REJ03G1198-0400 (Previous: ADE-208-536B) Rev.4.00 Sep 07, 2005 Features * * * * For Automotive Application (at Type Code "J") Low on-resistance Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 Nch Rev.4.00 Sep 07, 2005 page 1 of 11 S3 Pch Source Gate Drain HAT3008R, HAT3008RJ Absolute Maximum Ratings (Ta = 25C) Item Value Symbol Unit Nch Pch VDSS VGSS 60 20 -60 20 V V ID Note 1 ID (pulse) 5 40 -3.5 -28 A A IDR Note 4 IAP 5 -- -3.5 -- A -- EAR Note 4 5 -- -3.5 -- A -- Channel dissipation Pch Note 2 2.14 2 1.05 2 mJ W Channel dissipation Channel temperature Pch Tch 3 150 3 150 W C Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ HAT3008R Avalanche energy HAT3008RJ Note 3 Storage temperature Tstg -55 to +150 -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 4. Value at Tch = 25C, Rg 50 C Electrical Characteristics N Channel (Ta = 25C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 60 20 -- -- -- -- V V ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IGSS IDSS -- -- -- -- 10 1 A A VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 IDSS IDSS -- -- -- -- 0.1 -- A A IDSS VGS (off) -- 1.2 -- -- 10 2.2 A V VDS = 10 V, ID = 1 mA RDS (on) RDS (on) -- -- 0.043 0.056 0.058 0.084 ID = 3 A, VGS = 10 V Note 5 ID = 3 A, VGS = 4 V Forward transfer admittance Input capacitance |yfs| Ciss 6 -- 9 520 -- -- S pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 270 100 -- -- pF pF ID = 3 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr -- -- 11 40 -- -- ns ns VGS = 10 V, ID = 3 A VDD 30 V Turn-off delay time Fall time td (off) tf -- -- 110 80 -- -- ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr -- -- 0.84 40 1.1 -- V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain HAT3008R current HAT3008RJ Zero gate voltage drain HAT3008R current HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Note: 5. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 11 Test Conditions VDS = 48 V, VGS = 0 Ta = 125C Note 5 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0 diF/dt = 50 A/s Note 5 Note 5 HAT3008R, HAT3008RJ P Channel (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min -60 Typ -- Max -- Unit V Test Conditions ID = -10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS 20 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 Zero gate voltage drain current HAT3008R HAT3008RJ IDSS IDSS -- -- -- -- -1 -0.1 A A VDS = -60 V, VGS = 0 Zero gate voltage drain current HAT3008R HAT3008RJ IDSS IDSS -- -- -- -- -- -10 A A VDS = -48 V, VGS = 0 Ta = 125C Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) -1.2 -- -- 0.12 -2.2 0.15 V VDS = -10 V, ID = -1 mA Note 6 ID = -2 A, VGS = -10 V Forward transfer admittance RDS (on) |yfs| -- 3 0.16 4.5 0.23 -- S ID = -2 A, VGS = -4 V Note 6 ID = -2 A, VDS = -10 V Input capacitance Output capacitance Ciss Coss -- -- 600 290 -- -- pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) -- -- 75 11 -- -- pF ns VDS = -10 V VGS = 0 f = 1 MHz tr 30 100 -- -- ns ns Rise time Turn-off delay time td (off) -- -- Fall time Body-drain diode forward voltage tf VDF -- -- 55 -0.98 -- -1.28 ns V trr -- 70 -- ns Body-drain diode reverse recovery time Note: 6. Pulse test Rev.4.00 Sep 07, 2005 page 3 of 11 Note 6 VGS = -10 V, ID = -2 A VDD -30 V IF = -3.5 A, VGS = 0 IF = -3.5 A, VGS = 0 diF/dt = 50 A/s Note 6 HAT3008R, HAT3008RJ Main Characteristics N Channel Maximum Safe Operation Area Power vs. Temperature Derating 100 3.0 ive ive Op er ion at 1.0 Dr er Op 1 0 Drain Current Dr 2.0 0 50 at ion 10 s 30 ID (A) Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Channel Dissipation Pch (W) 4.0 10 10 3 1 0.3 0.1 Ambient Temperature 0.01 0.1 200 150 s Ta = 25C 1 shot Pulse 0.3 1 3 10 Drain to Source Voltage Ta (C) 0 s =1 0m Op s er (1 at sh ion ot) ( P Operation in W N 1 ot this area is 0 e7 s) limited by RDS (on) DC 0.03 100 1m PW 30 100 VDS (V) Note 7: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 10 V 4V 3.5 V (A) 3V VDS = 10 V Pulse Test 8 ID 8 10 Pulse Test 6 6 4 2.5 V 2 Drain Current Drain Current ID (A) 10 4 25C Tc = 75C 2 -25C VGS = 2 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 4 of 11 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) () Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () HAT3008R, HAT3008RJ 0.20 Pulse Test 0.16 0.12 1 A, 2 A ID = 5 A VGS = 4 V 0.08 0.04 1 A, 2 A, 5 A 10 V 0 -40 0 40 80 Case Temperature 120 Tc 160 50 20 Tc = -25C 10 5 25C 2 75C 1 VDS = 10 V Pulse Test 0.5 0.1 2 5 10 2000 1000 Capacitance C (pF) 200 100 50 20 10 di / dt = 50 A / s VGS = 0, Ta = 25C 0.5 1 2 5 Crss 50 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS VDS 12 VDD = 10 V 25 V 50 V 40 20 8 4 VDD = 50 V 25 V 10 V 0 8 16 Gate Charge Rev.4.00 Sep 07, 2005 page 5 of 11 24 0 32 Qg (nc) 40 1000 Switching Time t (ns) 16 VGS (V) Reverse Drain Current IDR (A) 80 0 Coss 100 10 ID = 5 A 60 200 10 0.2 20 100 Ciss 500 20 Gate to Source Voltage Reverse Recovery Time trr (ns) 1 Typical Capacitance vs. Drain to Source Voltage 500 5 0.1 VDS (V) 0.5 Drain Current ID (A) (C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.2 300 td(off) 100 tf 30 tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % 0.2 0.5 1 Drain Current 2 ID (A) 5 10 HAT3008R, HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) 10 8 10 V 6 5V VGS = 0, -5 V 4 2 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 2.5 IAP = 5 A VDD = 25 V L = 100 H duty < 0.1 % Rg 50 2.0 1.5 1.0 0.5 0 25 50 100 125 150 Channel Temperature Tch (C) VSD (V) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 75 1 * L * IAP2 * 2 EAR = VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin 15 V 50 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 VDD = 30 V 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 11 10% tr 90% td(off) tf HAT3008R, HAT3008RJ P Channel Power vs. Temperature Derating Dr 1.0 ive Op er ion at er Op 1 ive Dr 2.0 at ion 50 100 150 Ambient Temperature 10 200 0 s 1m s -10 -3 PW = 10 Op ms era tio n( Operation in PW N o 1 te 8 this area is 0s limited by RDS (on) ) DC -1 -0.3 -0.1 -0.03 Ta = 25C 1 shot pulse -0.01 -1 -0.1 -0.3 0 0 10 s -30 Drain Current 3.0 -100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Channel Dissipation Pch (W) 4.0 Maximum Safe Operation Area -3 -10 -30 -100 Drain to Source Voltage VDS (V) Ta (C) Note 8: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics -10 -10 V -5 V -4 V -8 -3.5 V Pulse Test ID (A) ID (A) -10 -3 V -4 -2 VGS = -2.5 V 0 -2 -4 -6 -8 Drain to Source Voltage -0.3 ID = -2 A -0.2 -1 A -0.5 A -4 -8 -12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 7 of 11 -16 -20 VGS (V) -1 -2 -3 -4 Gate to Source Voltage -5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) -0.4 0 -2 VDS (V) Pulse Test -0.1 25C Tc = 75C 0 0 -10 Drain to Source Saturation Voltage vs. Gate to Source Voltage -0.5 -4 -25C 0 0 -8 -6 Drain Current Drain Current -6 VDS = 10 V Pulse Test 1 Pulse Test 0.5 VGS = -4 V 0.2 0.1 -10 V 0.05 0.02 0.01 -0.1 -0.3 -1 -3 Drain Current -10 -30 ID (A) -100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () HAT3008R, HAT3008RJ 0.5 Pulse Test 0.4 ID = -2 A -1 A 0.3 -0.5 A VGS = -4 V 0.2 -2 A 0.1 -0.5 A, -1 A -10 V 0 -40 0 40 80 Case Temperature 120 160 20 10 Tc = -25C 5 25C 2 75C 1 0.5 VDS = 10 V Pulse Test 0.2 -0.1 -0.2 Tc (C) -5 -10 2000 VGS = 0 f = 1 MHz 1000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) -2 Typical Capacitance vs. Drain to Source Voltage 500 100 50 20 di / dt = 50 A / s VGS = 0, Ta = 25C 10 5 -0.1 -0.2 Ciss 500 100 50 -1 -2 -5 0 -10 -8 VGS VDS -12 VDD = -50 V -25 V -10 V -80 -16 -100 0 8 16 Gate Charge Rev.4.00 Sep 07, 2005 page 8 of 11 24 32 Qg (nc) -30 -40 -50 -20 40 1000 Switching Time t (ns) -4 VGS (V) ID = -3.5 A Gate to Source Voltage -40 -20 Switching Characteristics 0 VDD = -10 V -25 V -50 V -10 Drain to Source Voltage VDS (V) IDR (A) 0 -60 Crss 20 Dynamic Input Characteristics -20 Coss 200 10 -0.5 Reverse Drain Current VDS (V) -1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage -0.5 300 td(off) 100 tf 30 tr td(on) 10 3 V = -10 V, V = -30 V GS DD PW = 5 s, duty 1 % 1 -0.1 -0.2 -0.5 -1 -2 Drain Current ID (A) -5 -10 HAT3008R, HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) -10 -8 -6 10 V VGS = 0, 5 V -4 5V -2 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 Source to Drain Voltage -2.0 2.5 IAP = -3.5 A VDD = -25 V L = 100 H duty < 0.1 % Rg 50 2.0 1.5 1.0 0.5 0 25 50 100 125 150 Channel Temperature Tch (C) VSD (V) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 75 EAR = 1 * L * IAP2 * 2 VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin -15 V 50 0 VDD Switching Time Test Circuit Switching Time Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin -10 V 50 VDD = -30 V Vout td(on) Rev.4.00 Sep 07, 2005 page 9 of 11 10% 10% tr td(off) tf HAT3008R, HAT3008RJ Common Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.05 0.01 0.001 0.02 0.01 1s ho 0.0001 10 t ls pu D= PDM e PW T PW T 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.05 0.01 0.02 0.01 0.001 0.0001 10 D= PDM e uls tp ho 1s 100 PW T 1m 10 m 100 m 1 Pulse Width PW (S) Rev.4.00 Sep 07, 2005 page 10 of 11 PW T 10 100 1000 10000 HAT3008R, HAT3008RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 x 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0 y HE Detail F 5.80 e 8 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT3008R-EL-E HAT3008RJ-EL-E Quantity 2500 pcs 2500 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 11 of 11 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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