VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 1Document Number: 94076
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Ultrafast Rectifier, 10 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 5 A
VR200 V
VF at IFSee Electrical table
trr typ. See Recovery table
TJ max. 175 °C
Diode variation Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per leg IF(AV)
5
A
total device Rated VR, TC = 149 °C 10
Non-repetitive peak surge current per leg IFSM 50
Peak repetitive forward current per leg IFM
Rated VR, square wave, 20 kHz
TC = 149 °C 10
Operating junction and storage temperatures TJ, TStg - 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 200 - -
V
Forward voltage VF
IF = 5 A, TJ = 125 °C - 0.87 0.99
IF = 10 A, TJ = 125 °C - 1.02 1.20
IF = 10 A - 1.12 1.25
Reverse leakage current IR
VR = VR rated - - 10 μA
TJ = 150 °C, VR = VR rated - - 250
Junction capacitance CTVR = 200 V - 8 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 2Document Number: 94076
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
ns
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25
TJ = 25 °C
IF = 5 A
dIF/dt = 200 A/μs
VR = 160 V
-24-
TJ = 125 °C - 35 -
Peak recovery current IRRM
TJ = 25 °C - 3.3 - A
TJ = 125 °C - 5.0 -
Reverse recovery charge Qrr
TJ = 25 °C - 33 - nC
TJ = 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range TJ, TStg - 65 - 175 °C
Thermal resistance,
junction to case per leg RthJC --5
°C/W
Thermal resistance,
junction to ambient per leg RthJA --50
Thermal resistance,
case to heatsink RthCS
Mounting surface, flat, smooth
and greased -0.5-
Weight -2.0- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB MUR1020CT
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 3Document Number: 94076
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.001
0.01
0.1
1
10
100
0 8040 120 160 200
0.0001
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
1 10 100 1000
100
10
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 4Document Number: 94076
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
02468
180
170
160
150
140
130
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
See note (1)
Square wave (D = 0.50)
Rated VR applied
DC
01234 6785
7
4
3
2
1
0
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
6
5RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
160
0
100 1000
Qrr (nC)
dIF/dt (A/µs)
40
80
120
140
20
60
100 IF = 10 A
IF = 5 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 5Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com Vishay Semiconductors
Revision: 11-Aug-11 6Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR1020CTPbF 50 1000 Antistatic plastic tube
VS-MUR1020CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220ABPbF www.vishay.com/doc?95225
TO-220AB-N3 www.vishay.com/doc?95028
2- Ultrafast MUR series
1- Vishay Semiconductors product
3- Current rating (10 = 10 A)
4- Voltage rating (20 = 200 V)
5- CT = Center tap (dual) TO-220/D2PAK/TO-262
6
Device code
51 32 4 6
VS- MUR 10 20 CT PbF
PbF = Lead (Pb)-free and RoHS compliant
- Environmental digit:
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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