SOT-23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25C ambient temperature Max. Type Description Maximum Ratings Max. |Max. Vp at} Reverse Recovery Ve letav) IFAM [Ir at Val lp =50mA Time x Volts | mA mA pA Volts ns FMMD914 | Single diode 75 75 225 _ 1.07 4 HD3A Single diode 75 100 | 225 1.0 1.07 6 BAV70 Dual diode with common cathode 70 100 | 200 5.0 1.1 6 BAV74 Dual diode with common cathode 50 150 | 200 0.1 1.0* 4 HD2A Dual diode with common cathode 76 100 | 200 1.0 1.07 6 BAV99 Dual diode with series connection 70 100 | 200 2.5 1.1 6 BAW56 Dual diode with common anode 70 100 200 2.5 1.1 6 HD4A Dual diode with common anode 75 100 200 1.0 1.0] 6 *F=100mMA JiF=10mA X te at lp = 10MA, VR=1V, Ry, = 1008, Ip=imA. SILICON PLANAR REFERENCE DIODES Ratings and Characteristics at 25C ambient temperature Reference Voltage Differential Resistance Temperature Coefficient Reverse Current Vz at Iz=5mA rz at lz=5mA Sz at l7=5mA IR at Vr Type Volts Ohms %/C pA Volts Nom.| Min, | Max. Max. Typical Max. BZX84-C2V7 | 2.7 25] 2.9 120 0.07 20.0 1 BZxX84-C3V0 | 3.0 2.8) 3.2 120 0.07 10.0 1 BZX84-C3V3 | 3.3 3.1 3.5 110 0.06 5.0 1 BZX84-C3V6 | 3.6 3.4] 3.8 105 ~0.07 5.0 1 BZX84-C3V9 | 3.9 3.7 | 4.1 100 0.055 3.0 1 BZX84-C4V3 | 4.3 40] 46 90 0.045 3.0 1 BZX84-C4V7 | 4.7 44) 5.0 80 0.025 3.0 2 BZX84-C5V1 | 5.1 48) 5.4 60 +002 2.0 2 BZX84-C5V6 | 5.6 5.2 | 6.0 40 + 0.03 1.0 2 BZX84-C6V2 | 6.2 5.8] 6.6 10 +0.04 3.0 4 BZX84-C6V8B | 6.8 64) 7.2 15 + 0.045 2.0 4 BZX84-C7V5 | 7.5 7.0, 7.9 15 +0.05 1.0 5 BZX84-C8V2 | 8.2 7.7 | 8.7 15 + 0.055 0.7 5 BZxX84-C9V1| 9.1 8.5) 96 15 +0.06 0.5 6 BZX84-C10 10 9.4 | 10.6 20 + 0.065 0.2 7 BZX84-C11 11 10.4 | 11.6 20 +0.07 0.1 8 BZX84-C12 12 |.11.4 | 12.7 25 +0.075 0.1 8 BZX84-C13 13, | 12.4 | 14.1 30 +0.075 0.1 9 BZX84-C15 15 | 13.8 | 15.6 30 +0.075 0.05 10 BZX84-C16 16 | 18.3] 17.1 40 + 0.08 0.05 11 BZX84-C18 18 | 16.8 | 19.1 45 +0.08 0.05 3 BZX84-C20 20 |} 18.8 | 21.2 55 +0.08 0.05 14 BZX84-C22 22 | 20.8 | 23.3 55 +0.08 0.05 15 BZX84-C24 24 | 22.8 | 25.6 70 +0.08 0.05 7 Iz=2mA Iz=2mA Iz=2mA Iz=2mA BZX84-C27 27 =) 25.1 | 28.9 80 + 0.08 0.05 19 BZX84-C30 #0 28 32 80 +0.08 0.05 21 BZX84-C33 33 31 35 80 +0.08 0.05 23 BZX84-C36 36 4 38 90 +0.08 0.05 25 BZX84-C39 39 37 4 130 +0.08 0.05 27 BZX84-C43 23 40 46 150 +0.08 0.05 30 BZX84-C47 47 4 50 170 + 0.08 0.05 33 H10 SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Device Device Device Type marking Type marking BAV70 Aa BZX84-C43 x6 BAV74 JA BZX84-C47 x7 BAV99 A? FMMD109 4A BAW56 Al FMMD914 5D BZX84-C2V7 wW4 FMMD3102 4c BZX84-C3V0 W5 HD2A 5D BZX84-C3V3 W6 HD3A 4D BZX84-C3V6 w7 HD4A 7D BZX84-C3V9 we ZC830 Jd BZX84-C4V3 w9 ZC830A, - BZXx84-C4V7 21 ZC830B: _ BZX84-C5V1 Z2 ZC831 J3 BZX84-C5V6 23 ZCB831A - BZX84-C6V2 Z4 ZC831B _ BZX84-C6V8 25 20832 J4 BZX84-C7V5 26 ZC831A _ BZX84-C8V2 z7 ZC832B - BZX84-C9V1 Z8 ZC833 A2 BZX84-C10 zg ZC833A, J2 BZX84-C11 Yi 2C833B _ BZx84-C12 Y2 ZC834 J5 BZX84-C13 Y3 ZC834A, _ BZX84-C15 Y4 ZC834B - BZX84-C16 Y5 2C835 J6 BZX84-C18 Y6 ZC835A, - BZX84-C20 Y7 ZC835B - BZx84-C22 Y8 ZC836 J7 BZX84-C24 Y9 ZC836A - BZX84-C27 x1 ZC836B BZX84-C30 X2 Z2C2800E E6 BZX84-C33 x3 2C2810E E7 BZX84-C36 x4 ZC2811E E8 BZX84-C39 X5 ZC5800E E9 H4