MBR20200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86 5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1 32
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 200 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
180
T
J
Operating Temperature Range
-65 to +175
C
T
STG
Storage Temperature Range
-65 to +175
C
Typical Thermal Resistance (Note 2)
R
0JC
2.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
V
Voltage Rate of Change (Rated VR)
dv/dt 10000
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 8
5
uA
mA
T
C
=120 C
Maximum Forward
Voltage (Note 1)
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @ T
J
=125 C
T
J
=25 C
T
J
=125 C
T
J
=25 C
MBR20200CT
200
140
200
V/us
0.92
0.75
1.00
0.86
Typical Junction Capacitance
per element (Note 3)
C
J
250
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
REV. 5, Jul-2012, KTHC22