MMBT4401LT1 - Rectron Semiconductor Inc.

RECTRON

SEMICONDUCTOR

FEATURES

*

Power dissipation

PCM: 0.3 W(Tamb=25OC)

Collector current

ICM: 0.6 A

Collector-base voltage

V(BR)CBO: 60 V

Operating and storage junction temperature range

TJ,Tstg: -55OC to+150OC

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

MMBT4401LT1

Dimensions in inches and (millimeters)

2006-3

ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

NOTES :

Max. Instantaneous Forward Voltage at IF= 10mA

CHARACTERISTICS SYMBOL UNITS

417

-

Volts

oC/WThermal Resistance Junction to Ambient

RATINGS

Zener Current ( see Table "Characteristics" )

Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC

Max. Operating Temperature Range

Storage Temperature Range

SYMBOL

-

PD

TJ

TSTG

R θJA

VF

VALUE

MAX.

-

TYP.

-

MIN.

UNITS

-

mW

-

300

1. Alumina=0.4*0.3*0.024in.99.5% alumina

-55 to +150

oC

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

0.118(3.000)

0.012(0.30)

0.020(0.50)

0.003(0.080)

0.006(0.150)

0.110(2.800)

0.019(2.00)

0.071(1.80)

0.100(2.550)

0.089(2.250)

0.020(0.500)

0.012(0.300)

0.043(1.100)

0.035(0.900)

0.004(0.100)

0.000(0.000)

0.037(0.950)TYP

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(NPN)

ELECTRICAL CHARACTERISTICS

(@TA=25OC unless otherwise noted)

OFF CHARACTERISTICS

ON CHARACTERISTICS(2)

Chatacteristic

Collector-Emitter Breakdown Voltage(2) (IC= 1.0 mAdc, IB= 0)

Collector-Base Breakdown Voltage (IC= 0.1µAdc, IE= 0)

Emitter-Base Breakdown Voltage (IE= 0.1µAdc, IC= 0)

Base Cutoff Current (VCE= 35Vdc, VBE(off)= 0.4Vdc)

Collector Cutoff Current (VCE= 35Vdc, VEB= 0.4Vdc)

DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc)

(IC= 10mAdc, VCE= 1.0Vdc)

(IC= 1.0mAdc, VCE= 1.0Vdc)

V(BR)CEO 40 - Vdc

V(BR)CBO 60 - Vdc

V(BR)EBO 6.0 - Vdc

ICEX

IBEV - 0.1

- 0.1

hFE

20 -

-

40 -

80 -

100 300

µAdc

Symbol Min Max Unit

(IC= 150mAdc, VCE= 1.0Vdc)

Collector-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)

(IC= 500mAdc, IB= 50mAdc)

(IC= 500mAdc, VCE= 2.0Vdc)

Vdc

VCE(sat)

40 -

- 0.4

- 0.75

Vdc

VBE(sat)

0.75 0.95

- 1.2

Base-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)

(IC= 500mAdc, IB= 50mAdc)

RECTRON

SMALL-SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

fT250 - MHz

Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 10Vdc, f= 100MHz)

Ccb

Ceb

- 6.5 pF

pF

td

tr

ts

tf

-

ns

hie

- 30

1.0 15 kohms

hre 0.1 8.0

40 500

X 10-

4

hfe

1.0 30

-

hoe

225

30

15

20

µmhos

Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz)

Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz)

Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)

Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)

(VCC= 30Vdc, VEB= 2.0Vdc, IC= 150mAdc, IB1= 15mAdc)

(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)

Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)

Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)

Delay Time

Rise Time

Storage Time

Fall Time

NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%

--

RECTRON

RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 )

Figure 1. Capacitances

3.0

5.0

7.0

10

30

2.0

20

Figure 3. Turn-On Time

Figure 5. Storage Time Figure 6. Fall Time

10

20

30

50

70

100

7.0

5.0

300

200

100

70

50

30

0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50

10 20 30 50 70 100 200 300 500

CAPACITANCE(pF)

ts',STORAGE TIME(ns)

tf,FALL TIME(ns) t,TIME(ns)

t,TIME(ns)

Q,CHARGE(nC)

REVERSE VOLTAGE(VOLTS)

IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA)

IC,COLLECTOR CURRENT (mA)

Figure 4. Rise and Fall Times

10

20

30

50

70

100

7.0

5.0

10

20

30

50

70

100

7.0

5.0

10 20 30 50 70 100 200 300 500

IC,COLLECTOR CURRENT (mA)

10 20 30 50 70 100 200 300 500

Figure 2. Charge Data

0.2

0.3

0.5

0.7

1.0

10

0.1

2.0

3.0

5.0

7.0

VCC = 30V

IC/IB = 10

Cobo QT

Q

A

25

O

C 100

O

C

Ccb

IC/IB=10

tr@ VCC= 30V

tr@ VCC= 10V

td@ VEB= 2.0V

td@ VEB= 0V

tr

tf

IC/IB=10

IB1=IB2

ts'=ts -1/8tf

IC/IB=10

IC/IB= 20

IC/IB= 10 to 20

VCC= 30V

RECTRON

RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 )

10

8.0

6.0

4.0

2.0

0

10

8.0

6.0

4.0

2.0

0

300

20

10

hje,INPUT IMPEDANCE(OHMS)

200

100

70

50

30

400

300

200

100

80

60

40

30

20

3.0

5.0

7.0

2.0

0.5

0.7

1.0

0.3

0.2

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

100

50

20

10

5.0

2.0

1.0

NF,NOISE FIGURE (dB)hfe,CURRENT GAINV,VOLTAGE (VOLTS)

COEFFICIENT (mV/ 5C) NF,NOISE FIGURE (dB)

Figure 7.Frequency Effects

IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)

Figure 9.Cuttent Gain Figure 10.Input Impedance

f,FREQUENCY(KHz) RS,SOURCE RESISTANCE(OHMS)

Figure 8.Source Resistance Effects

IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)

Figure 12.Temperature CoefficientsFigure 11.Voltage Feedback Ratio

RS = OPTIMUM

SOURCE

RESISTANCE

RS =

f = 1.0 kHz

IC=50uA

IC=100uA

IC=500uA

IC=1.0mA

IC=1.0mA, RS = 150

Ω

IC=500

µ

A, RS = 200

Ω

IC=100

µ

A, RS = 2.0 k

Ω

IC=50

µ

A, RS = 4.0k

Ω

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

RECTRON

RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 )

Figure 13. DC Current Gain

Figure 14. Collector Saturation Region

Figure 15. "ON" Voltages Figure 16. Temperature Coefficients

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

hFE,NORMALIZED CURRENT GAIN

VCE,COLLECTOR - EMITTER VOLTAGE(VOLTS)

VOLTAGE(VOLTS)

COEFFICIENT(mV/OC)

IC,COLLECTOR CURRENT (mA)

IB,BASE CURRENT (mA)

IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

10 mA 100 mA 500 mA

0.3

0.5

0.7

1.0

3.0

0.2

2.0

VCE = 1.0V

TJ = 125OC

TJ = 25OC

25OC

-55OC

VCE = 10V

0.4

0.6

0.8

1.0

0.2

0

-0.5

0

+ 0.5

-1.0

-1.5

-2.0

VBE(sat) @ IC/IB = 10

-2.5

IC = 1.0mA

TJ = 25OC

VBE @ VCE= 10V

VCE(sat) @ IC/IB = 10

ΘVC for VCE(sat)

ΘVB for VBE