RECTRON SEMICONDUCTOR MMBT4401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS SYMBOL VALUE UNITS - - mW Zener Current ( see Table "Characteristics" ) o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 Max. Operating Temperature Range TJ -55 to +150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R JA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (I C = 1.0 mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 0.1Adc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 0.1Adc, I C = 0) V(BR)EBO 6.0 - Vdc Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc) IBEV - 0.1 Adc Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc) ICEX - 0.1 Adc DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 20 - (I C = 1.0mAdc, V CE = 1.0Vdc) 40 - ON CHARACTERISTICS(2) (I C = 10mAdc, V CE = 1.0Vdc) 80 - (I C = 150mAdc, V CE = 1.0Vdc) 100 300 (I C = 500mAdc, V CE = 2.0Vdc) 40 - Collector-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc) hFE - - 0.4 - 0.75 0.75 0.95 - 1.2 fT 250 - MHz Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Ccb - 6.5 pF Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Ceb - 30 pF Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hie 1.0 15 kohms Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hre 0.1 8.0 X 10-4 Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hfe 40 500 - Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hoe 1.0 30 mhos td - 15 tr - 20 ts - 225 tf - 30 (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc) VCE(sat) VBE(sat) (I C = 500mAdc, I B = 50mAdc) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) ns ns <300s,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 ) O 100OC 25 C 30 10 7.0 5.0 VCC = 30V IC/IB = 10 3.0 Cobo Q,CHARGE(nC) CAPACITANCE(pF) 20 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 Ccb 3.0 QA 0.2 2.0 0.1 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50 10 20 Figure 1. Capacitances 70 100 200 300 500 100 IC/IB=10 70 70 50 30 20 tf 30 20 10 10 7.0 7.0 5.0 VCC= 30V IC/IB=10 tr 50 tr@ VCC= 30V tr@ VCC= 10V td@ VEB= 2.0V td@ VEB= 0V t,TIME(ns) t,TIME(ns) 50 Figure 2. Charge Data 100 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 3. Turn-On Time Figure 4. Rise and Fall Times 300 300 500 100 ts'=ts -1/8tf IB1=IB2 IC/IB= 10 to 20 VCC= 30V IB1=IB2 70 50 tf,FALL TIME(ns) 200 ts',STORAGE TIME(ns) 30 IC,COLLECTOR CURRENT (mA) REVERSE VOLTAGE(VOLTS) 100 70 IC/IB= 20 30 IC/IB=10 20 10 50 7.0 5.0 30 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time 300 500 RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 ) 10 8.0 IC=1.0mA, RS = 150 IC=500A, RS = 200 IC=100A, RS = 2.0 k IC=50A, RS = 4.0 k f = 1.0 kHz RS = OPTIMUM SOURCE RS = RESISTANCE 6.0 4.0 8.0 NF,NOISE FIGURE (dB) NF,NOISE FIGURE (dB) 10 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 8.Source Resistance Effects 400 300 100 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 70 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hje,INPUT IMPEDANCE(OHMS) hfe,CURRENT GAIN 100 200 Figure 7.Frequency Effects 30 200 100 80 60 40 30 20 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 9.Cuttent Gain Figure 10.Input Impedance 5.0 7.0 10 100 10 7.0 5.0 50 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 COEFFICIENT (mV/ 5C) V,VOLTAGE (VOLTS) 2.0 RS,SOURCE RESISTANCE(OHMS) 200 20 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 2.0 0.3 0.2 0.1 4.0 f,FREQUENCY(KHz) 300 20 0.1 6.0 0 50 50 100 IC=50uA IC=100uA IC=500uA IC=1.0mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 11.Voltage Feedback Ratio Figure 12.Temperature Coefficients RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT4401LT1 ) hFE,NORMALIZED CURRENT GAIN 3.0 VCE = 1.0V VCE = 10V 2.0 O TJ = 125 C 1.0 O 25 C 0.7 0.5 O -55 C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC,COLLECTOR CURRENT (mA) VCE,COLLECTOR - EMITTER VOLTAGE(VOLTS) Figure 13. DC Current Gain 1.0 O TJ = 25 C 0.8 0.6 10 mA IC = 1.0mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB,BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.0 + 0.5 O TJ = 25 C VBE(sat) @ IC/IB = 10 0 O COEFFICIENT(mV/ C) VOLTAGE(VOLTS) 0.8 0.6 VBE @ VCE= 10V 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 0..2 0.5 1.0 2.0 5.0 10 VC for VCE(sat) -0.5 -1.0 -1.5 -2.0 20 50 100 200 500 -2.5 0.1 VB for VBE 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients 500 RECTRON