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1N5551 Information
Category » Diodes
Class » High-Speed/Fast Recovery Diodes
Type » General Purpose
1N5551 Specifications
Military/High-Rel : N
I(O) Max.(A) Output Current : 3.0
V(RRM)(V) Rep.Pk.Rev. Voltage : 400
t(rr) Max.(s) Rev.Rec. Time : 2.0u
@I(F) (A) (Test Condition) : 500m
@I(R) (A) (Test Condition) : 1.0
V(FM) Max.(V) Forward Voltage : 1.2
@I(FM) (A) (Test Condition) : 9.0
@V(RM) (V) (Test Condition) :
I(RM) Max.(A) Reverse Current : 1.0u
@V(R) (V)(Test Condition) : 400
I(RM) Max.(A) Pk. Rev. Current : 25u
@V(R) (V) (Test Condition) :
@Temp. (шC) (Test Condition) : 100х
Semiconductor Material : Silicon
Maximum Operating Temp (шC) : 175
Package Style : Axial-B
Mounting Style : T
Description :
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Lanuage Translator:
American Micro specializes
in providing obsolete parts
that have been discontinued
by other manufacturers. We
love filling the demand on
the “oldie-but-goodie”
semiconductors that
National and Motorola have
left behind. Call us today at
(973) 377-9566 to find
out if we can supply your
demand for discontinued
passive and active
components!
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1N5551 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=1N5551
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