2SA1013
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1013
Color TV Verttical Deflection Output Applications
Power Switching Applications
High voltage: VCEO = 160 V
Large continuous collector current capability
Recommended for vertical deflection output & sound output
applications for line-operated TV.
Complementary to 2SC2383.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 160 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 6 V
Collector current IC 1 A
Base current IB 0.5 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Electrical Characte ristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 150 V, IE = 0 1.0 µA
Emitter cut-off current IEBO V
EB = 6 V, IC = 0 1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 160 V
DC current gain hFE (Note) VCE = 5 V, IC = 200 mA 60 200
Collector-emitter saturation voltage VCE (sat) I
C = 500 mA, IB = 50 mA 1.5 V
Base-emitter voltage VBE V
CE = 5 V, IC = 5 mA 0.45 0.75 V
Transition frequency fT V
CE = 5 V, IC = 200 mA 15 50 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 35 pF
Note: hFE classification R: 60 to 120, O: 100 to 200
Mark ing
Unit: mm
JEDEC TO-92MOD
JEITA
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
A1013
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1013
2004-07-07
2
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
DC current gain hFE
hFEIC
Collector current IC (A)
DC current gain hFE
Collector current IC (mA)
hFEIC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Common emitter
Ta = 25°C
0
0
1.0
0.2
IB = 1 mA
0.4
0.6
0.8
4 8 12 16 20 24
8
2
28
6
0
3
15
4.5
12
10
Common emitter
Ta = 25°C
1
0.03
5
0.5
0.05
0.1
0.3
10 30 100 300 1000
IC/IB = 10
5
3
Common emitter
VCE = 5 V
1.0
00
0.2
0.4
0.6
0.8
0.2 0.4 0.6 0.8 1.0 1.4
Ta = 100°C
25
0
1.2
Common emitter
Ta = 25°C
5
10
300
10
VCE = 2 V
30
50
100
30 100 300 1000
5
10
Common emitter
IC/IB = 10
1
0.03
5
0.5
0.05
0.1
0.3
10 30 100 300 1000
Ta = 100°C
25
3
0
Common emitter
VCE = 10 V
VCE = 5 V
5
10
300
10
Ta = 100°C
30
50
100
30 100 300 1000
25
0
2SA1013
2004-07-07
3
Collector current IC (A)
fT – IC
Transition frequency ft (MHz)
Collector-base voltage VCE (V)
Cob – VCB
Collector output capacitance Cob (pF)
Safe Operating Area
Collector current IC (A)
10
-1
Common emitter
Ta = 25°C
2
VCE = 5 V
300
3 10 30 100 300
30
50
100
5
3
10
-1
Common emitter
f = 1 MHz
Ta = 25°C
300
3 10 30 100 300
30
50
100
5
3
Collector-emitter voltage VCE (V)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.003
1
IC max = 1.0 A
DC operation
Ta = 25°C
IC max (pulsed)*
VCEO max
1 ms*
100 ms*
100 30 3 10
0.01
0.03
0.1
0.3
0.5
1
3
0.05
10 ms*
Thermal limited
S/B limited
300
2SA1013
2004-07-07
4
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030619EAA
RESTRICTIONS ON PRODUCT USE