SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 1Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) -40
RDS(on) () at VGS = -10 V 0.0070
RDS(on) () at VGS = -4.5 V 0.0100
ID (A) -60
Configuration Single
Package PowerPAK SO-8L
PowerPAK® SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -40 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C a
ID
-60
A
TC = 125 °C -42
Continuous source current (diode conduction) aIS-60
Pulsed drain current bIDM -150
Single pulse avalanche current L = 0.1 mH IAS -41
Single pulse avalanche energy EAS 84 mJ
Maximum power dissipation bTC = 25 °C PD
68 W
TC = 125 °C 22
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount cRthJA 68 °C/W
Junction-to-case (drain) RthJC 2.2
SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 2Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = -250 μA -40 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = -40 V - - -1
μA VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -40 V, TJ = 175 °C - - -150
On-state drain current a I
D(on) V
GS = -10 V VDS -5 V -30 - - A
Drain-source on-state resistance a R
DS(on)
VGS = -10 V ID = -10 A - 0.0058 0.0070
VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0106
VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0126
VGS = -4.5 V ID = -6 A - 0.0083 0.0100
Forward transconductance bgfs VDS = -15 V, ID = -10 A - 54 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = -25 V, f = 1 MHz
- 8400 11 000
pF Output capacitance Coss - 620 850
Reverse transfer capacitance Crss - 510 700
Total gate charge cQg
VGS = -10 V VDS = -20 V, ID = -5 A
- 170 260
nC Gate-source charge cQgs -24-
Gate-drain charge cQgd -35-
Gate resistance Rgf = 1 MHz 0.50 1.08 1.70
Turn-on delay time ctd(on)
VDD = -20 V, RL = 4
ID -5 A, VGEN = -10 V, Rg = 1
-2335
ns
Rise time ctr -1830
Turn-off delay time ctd(off) -75120
Fall time ctf -1220
Source-Drain Diode Ratings and Characteristics b
Pulsed current aISM ---150A
Forward voltage VSD IF = -10 A, VGS = 0 V - -0.76 -1.2 V
Body diode reverse recovery time trr
IF = -10 A, dI/dt = 100 A/μs
-3990ns
Body diode reverse recovery charge Qrr -45100nC
Reverse recovery fall time ta-22-
ns
Reverse recovery rise time tb-19-
Body diode peak reverse recovery
current IRM(REC) --2.3- A
SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 3Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
20
40
60
80
100
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5 V
VGS = 3 V
VGS = 4 V
10
100
1000
10000
0
20
40
60
80
100
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
2000
4000
6000
8000
10 000
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
14
28
42
56
70
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0.000
0.004
0.008
0.012
0.016
0.020
0 1632486480
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
04080120160200
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 5 A
VDS = 20 V
SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 4Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain-Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 10 A VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.000
0.005
0.010
0.015
0.020
0.025
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-0.5
-0.1
0.3
0.7
1.1
1.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
-55
-52
-49
-46
-43
-40
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 5Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
IDlimited
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = RthJA = 68 °C/W
3. T JM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface mounted
PDM
SQJ409EP
www.vishay.com Vishay Siliconix
S16-2658-Rev. A, 02-Jan-17 6Document Number: 77707
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77707.
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single
pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 1Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® SO-8L Case Outline 2
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 2Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6044
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 07-Feb-12 1Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
Recommended Minimum Pads
Dimensions in mm (inches)
5.000
(0.197)
2.310
(0.091)
0.510
(0.020)
0.595
(0.023)
4.061
(0.160)
3.630
(0.143)
0.410
(0.016)
0.710
(0.028)
0.610
(0.024)
2.715
(0.107)
1.270
(0.050)
1.905
(0.075)
0.860
(0.034)
0.820
(0.032)
7.250
(0.285)
8.250
(0.325)
6.250
(0.246)
1.291
(0.051)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
