SQJ409EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK(R) SO-8L Single * TrenchFET(R) power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D 6. 15 m m m 3 1 1 5. m Top View 4 G 3 S 2 S 1 S * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View G PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = -10 V 0.0070 RDS(on) () at VGS = -4.5 V 0.0100 ID (A) Configuration Package -60 D Single P-Channel MOSFET PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS 20 Continuous drain current TC = 25 C a TC = 125 C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID -60 IS -60 -150 IAS -41 EAS 84 TJ, Tstg Soldering recommendations (peak temperature) d, e V -42 IDM PD UNIT 68 22 -55 to +175 260 A mJ W C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 68 RthJC 2.2 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-2658-Rev. A, 02-Jan-17 Document Number: 77707 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ409EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 A -40 - - VGS(th) VDS = VGS, ID = -250 A -1.5 -2.0 -2.5 VDS = 0 V, VGS = 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage IGSS - - 100 VGS = 0 V VDS = -40 V - - -1 - - -50 -150 Zero gate voltage drain current IDSS VGS = 0 V VDS = -40 V, TJ = 125 C VGS = 0 V VDS = -40 V, TJ = 175 C - - On-state drain current a ID(on) VGS = -10 V VDS -5 V -30 - - VGS = -10 V ID = -10 A - 0.0058 0.0070 Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = -10 V ID = -10 A, TJ = 125 C - - 0.0106 VGS = -10 V ID = -10 A, TJ = 175 C - - 0.0126 VGS = -4.5 V ID = -6 A - 0.0083 0.0100 - 54 - VDS = -15 V, ID = -10 A V nA A A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -20 V, ID = -5 A f = 1 MHz td(on) tr td(off) VDD = -20 V, RL = 4 ID -5 A, VGEN = -10 V, Rg = 1 tf - 8400 11 000 - 620 850 - 510 700 - 170 260 - 24 - - 35 - 0.50 1.08 1.70 - 23 35 - 18 30 - 75 120 - 12 20 pF nC ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = -10 A, VGS = 0 V IF = -10 A, dI/dt = 100 A/s - - -150 - -0.76 -1.2 V - 39 90 ns - 45 100 nC Reverse recovery fall time ta - 22 - Reverse recovery rise time tb - 19 - IRM(REC) - -2.3 - Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2658-Rev. A, 02-Jan-17 Document Number: 77707 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ409EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 70 10000 10000 VGS = 10 V thru 5 V 40 100 20 1000 42 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 56 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 25 C 28 100 14 TC = 125 C VGS = 3 V 0 0 2 4 6 8 TC = -55 C 0 10 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 100 0.020 10000 10000 1000 60 TC = 125 C 40 100 20 0 5 10 15 20 1000 0.012 VGS = 4.5 V 0.008 100 VGS = 10 V 0.004 0.000 10 0 0.016 10 0 25 16 64 Transconductance On-Resistance vs. Drain Current Axis Title 1st line 2nd line 4000 100 Crss 2000 Coss 0 10 24 32 40 10000 ID = 5 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 6000 2nd line VGS - Gate-to-Source Voltage (V) 8000 16 4 100 2 0 10 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-2658-Rev. A, 02-Jan-17 80 10 10000 Ciss 2nd line C - Capacitance (pF) 48 ID - Drain Current (A) 2nd line Axis Title 8 32 ID - Drain Current (A) 2nd line 10 000 0 1st line 2nd line TC = 25 C 2nd line RDS(on) - On-Resistance () 80 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 C 200 Document Number: 77707 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ409EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 10 A 10000 VGS = 10 V 10 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 25 50 0.1 TJ = 25 C 0.01 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.025 1.5 10000 0.020 10000 ID = 250 A 2nd line VGS(th) Variance (V) 1.1 1000 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance () 100 TJ = 150 C 0.010 100 TJ = 25 C 0.005 4 100 -0.5 10 2 ID = 5 mA 0.3 -0.1 0.000 0 1000 0.7 1st line 2nd line 0 1000 1 0.001 10 -50 -25 TJ = 150 C 1st line 2nd line 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA -43 1000 -46 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -40 -49 100 -52 -55 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line Drain-Source Breakdown vs. Junction Temperature S16-2658-Rev. A, 02-Jan-17 Document Number: 77707 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ409EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 s 10 1000 1 ms ID limited 10 ms 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 Limited by RDS(on) (1) 0.1 TC = 25 C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = R thJA = 68 C/W 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S16-2658-Rev. A, 02-Jan-17 Document Number: 77707 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ409EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77707. S16-2658-Rev. A, 02-Jan-17 Document Number: 77707 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline 2 Revision: 05-Aug-2019 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0 - 0.117 10 0 - 10 ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6044 Note * Millimeters will gover Revision: 05-Aug-2019 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK(R) SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000