TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 High-Efficiency 8-A or 14-A Synchronous Buck Converter with Eco-modeTM Check for Samples: TPS53318, TPS53319 FEATURES 1 * * * * * * * 2 * * * * * * * * * * * * * * Conversion Input Voltage Range: 1.5 V to 22 V VDD Input Voltage Range: 4.5 V to 25 V 91% Efficiency from 12 V to 1.5 V at 14 A Output Voltage Range: 0.6 V to 5.5 V 5-V LDO Output Supports Single Rail Input Integrated Power MOSFETs with 8-A (TPS53318) or 14-A (TPS53319) of Continuous Output Current Auto-Skip Eco-modeTM for Light-Load Efficiency <110 A Shut Down Current D-CAPTM Mode with Fast Transient Response Selectable Switching Frequency from 250 kHz to 1 MHz with External Resistor Selectable Auto-Skip or PWM-Only Operation Built-in 1% 0.6-V Reference. 0.7-ms, 1.4-ms, 2.8-ms and 5.6-ms Selectable Internal Voltage Servo Soft-Start Integrated Boost Switch Pre-Charged Start-up Capability Adjustable Overcurrent Limit with Thermal Compensation Overvoltage, Undervoltage, UVLO and OverTemperature Protection Supports All Ceramic Output Capacitors Open-Drain Power Good Indication Incorporates NexFETTM Power Block Technology 22-pin QFN Package with PowerPADTM * APPLICATIONS * * * Server/Storage Workstations and Desktops Telecommunications Infrastructure DESCRIPTION The TPS53318 and TPS53319 are D-CAPTM mode, 8-A or 14-A synchronous switchers with integrated MOSFETs. They are designed for ease of use, low external component count, and space-conscious power systems. These devices feature accurate 1%, 0.6-V reference, and integrated boost switch. A sample of competitive features include: 1.5-V to 22-V wide conversion input voltage range, very low external component count, DCAPTM mode control for super fast transient, autoskip mode operation, internal soft-start control, selectable frequency, and no need for compensation. The conversion input voltage ranges from 1.5 V to 22 V, the supply voltage range is from 4.5 V to 25 V, and the output voltage range is from 0.6 V to 5.5 V. These devices are available in 5 mm x 6 mm, 22-pin QFN package and is specified from -40C to 85C. SIMPLIFIED APPLICATION VVDD 21 20 19 18 17 16 15 14 13 TRIP MODE VDD VREG VIN VIN VIN VIN VIN ROVP LL LL LL 3 4 5 6 7 8 PGOOD LL VBST 2 LL PGOOD 1 LL EN GND VFB TPS53318/TPS53319 VREG 12 VIN 22 RF VIN 9 10 11 VOUT EN UDG-12040 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Eco-mode, NexFET, PowerPAD are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2012-2013, Texas Instruments Incorporated TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION TA ORDERING PART NUMBER PACKAGE Plastic QFN (DQP) -40C to 85C OUTPUT SUPPLY MINIMUM QUANTITY TPS53318DQPR Tape and reel 2500 TPS53318DQPT Mini reel 250 Tape and reel 2500 Mini reel 250 TPS53319DQPR TPS53319DQPT PINS 22 ECO PLAN Pb-Free (RoHS Exempt) ABSOLUTE MAXIMUM RATINGS (1) VALUE Input voltage range MIN MAX VIN (main supply) -0.3 30 VDD -0.3 28 VBST -0.3 32 VBST(with respect to LL) -0.3 7 EN, TRIP, VFB, RF, MODE, ROVP -0.3 7 DC -2 30 Pulse < 20ns, E=5 J -7 32 PGOOD, VREG -0.3 7 GND -0.3 0.3 LL Output voltage range Source/Sink current VBST 50 -40 85 Storage temperature range, Tstg -55 150 Junction temperature range, TJ -40 150 Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds V V mA Operating free-air temperature, TA (1) UNIT C 300 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL INFORMATION TPS53319 THERMAL METRIC (1) DQP (22 PINS) JA Junction-to-ambient thermal resistance 27.2 JCtop Junction-to-case (top) thermal resistance 17.1 JB Junction-to-board thermal resistance 5.9 JT Junction-to-top characterization parameter 0.8 JB Junction-to-board characterization parameter 5.8 JCbot Junction-to-case (bottom) thermal resistance 1.2 (1) 2 UNITS C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VALUE Input voltage range MIN MAX VIN (main supply) 1.5 22 VDD 4.5 25 VBST 4.5 28 VBST(with respect to LL) EN, TRIP, VFB, RF, MODE, ROVP Output voltage range LL PGOOD, VREG Junction temperature range, TJ 4.5 6.5 -0.1 6.5 -1 27 -0.1 6.5 -40 125 UNIT V V C ELECTRICAL CHARACTERISTICS Over recommended free-air temperature range, VVDD=12 V (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VVIN VIN pin power conversion input voltage VVDD Supply input voltage IVIN(leak) VIN pin leakage current VEN = 0 V IVDD VDD supply current TA = 25C, No load, VEN = 5 V, VVFB = 0.630 V IVDDSDN VDD shutdown current TA = 25C, No load, VEN = 0 V 1.5 22 4.5 25.0 V 1 A 590 A 110 A 420 V INTERNAL REFERENCE VOLTAGE VVFB CCM condition (1) VFB regulation voltage TA = 25C VVFB 0C TA 85C VFB regulation voltage -40C TA 85C IVFB VFB input current 0.600 V 0.597 0.600 0.603 0.5952 0.600 0.6048 0.594 0.600 0.606 0.01 0.20 5.00 5.36 VVFB = 0.630 V, TA = 25C V A LDO OUTPUT VVREG LDO output voltage 0 mA IVREG 30 mA IVREG LDO output current (1) Maximum current allowed from LDO VDO Low drop out voltage VVDD = 4.5 V, IVREG = 30 mA 4.77 V 30 mA 250 mV BOOT STRAP SWITCH VFBST Forward voltage VVREG-VBST, IF = 10 mA, TA = 25C IVBSTLK VBST leakage current VVBST = 23 V, VSW = 17 V, TA = 25C 0.1 0.2 V 0.01 1.50 A 260 400 ns DUTY AND FREQUENCY CONTROL tOFF(min) tON(min) Minimum off-time TA = 25C Minimum on-time VIN = 17 V, VOUT = 0.6 V, fSW = 1 MHz, TA = 25 C (1) 150 35 RMODE = 39 k 0.7 RMODE = 100 k 1.4 RMODE = 200 k 2.8 RMODE = 470 k 5.6 ns SOFT START Internal soft-start time from VOUT = 0 V to 95% of VOUT tSS ms OUTPUT VOLTAGE DISCHARGE IDSCHG (1) Output voltage discharge current VEN= 0 V, VSW= 0.5 V 5.0 6.6 9.0 mA Ensured by design. Not production tested. Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 3 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com ELECTRICAL CHARACTERISTICS Over recommended free-air temperature range, VVDD=12 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWERGOOD VTHPG PG threshold PG in from lower 92.5% 95.0% 98.5% PG in from higher 107.5% 110.0% 112.5% 2.5% 5.0% 7.5% PG hysteresis RPG PG transistor on-resistance tPGDEL PG delay 15 30 60 Delay for PG in 0.8 1 1.2 ms Enable 1.0 1.3 1.6 Disable 0.8 1.0 1.2 LOGIC THRESHOLD AND SETTING CONDITIONS VEN EN Voltage IEN EN Input current VEN = 5 V 1.0 RRF = 0 to GND, TA = 25C fSW Switching frequency (1) 200 250 300 RRF = 187 k to GND, TA = 25C (1) 250 300 350 RRF = 619 k, to GND, TA = 25C (1) 350 400 450 RRF = Open, TA= 25C (1) 450 500 550 (1) 540 600 660 RRF = 309 k to VREG, TA = 25C (1) 670 750 820 RRF = 124 k to VREG, TA = 25C (1) 770 850 930 880 970 1070 RRF = 866 k to VREG, TA = 25C RRF = 0 to VREG, TA = 25C (1) V A kHz PROTECTION: CURRENT SENSE ITRIP TRIP source current VTRIP = 1 V, TA = 25C TCITRIP TRIP current temperature coeffficient VTRIP Current limit threshold setting range VOCL Current limit threshold VOCLN Negative current limit threshold IOCP Valley current limit threshold VAZCADJ Auto zero cross adjustable range TPS53318 TPS53319 On the basis of 25C 10 (2) A 3000 VTRIP-GND ppm/C 0.4 1.5 0.4 2.4 VTRIP = 1.2 V 37.5 VTRIP = 0.4 12.5 VTRIP = 1.2 V -37.5 VTRIP = 0.4 V -12.5 mV mV RTRIP = 66.5 k, 0C TA 125C 4.6 5.4 6.3 RTRIP = 66.5 k, -40C TA 125C 4.4 5.4 6.3 3 15 Positive Negative V -15 -3 120% 125% A mV PROTECTION: UVP and OVP VOVP OVP trip threshold OVP detect tOVPDEL OVP proprogation delay VFB delay with 50-mV overdrive 115% VUVP Output UVP trip threshold UVP detect tUVPDEL Output UVP proprogation delay tUVPEN Output UVP enable delay From enable to UVP workable 1 s 65% 70% 75% 0.8 1.0 1.2 ms 1.5 2.3 3.0 ms 4.00 4.20 4.33 UVLO VUVVREG VREG UVLO threshold Wake up Hysteresis 0.25 Shutdown temperature (2) 145 V THERMAL SHUTDOWN TSDN (1) (2) 4 Thermal shutdown threshold Hysteresis (2) 10 C Not production tested. Test condition is VIN= 12 V, VOUT= 1.2 V, IOUT = 5 A using application circuit shown in Figure 1. Ensured by design. Not production tested. Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 DEVICE INFORMATION DQP PACKAGE 22 PINS (TOP VIEW) VFB 1 22 RF EN 2 21 TRIP PGOOD 3 20 MODE VBST 4 19 VDD ROVP 5 18 VREG LL 6 17 VIN LL 7 16 VIN LL 8 15 VIN LL 9 14 VIN LL 10 13 VIN LL 11 12 VIN GND PowerPad TM PIN FUNCTIONS PIN NAME EN NO. 2 GND I/O/P (1) DESCRIPTION I Enable pin.Typical turn-on threshold voltage is 1.3 V. Typical turn-off threshold voltage is 1.0 V. G Ground and thermal pad of the device. Use proper number of vias to connect to ground plane. B Output of converted power. Connect this pin to the output Inductor. 6 7 8 LL 9 10 11 MODE 20 I Soft-start and mode selection. Connect a resistor to select soft-start time using Table 1. The soft-start time is detected and stored into internal register during start-up. PGOOD 3 O Open drain power good flag. Provides 1-ms start-up delay after VFB falls in specified limits. When VFB goes out of the specified limits PGOOD goes low after a 2-s delay ROVP 5 I Redundant overvoltage protection (OVP) input. Use a resistor divider to connect this pin to VOUT. Internally pulled down to GND with 1.5-M resistor. Float this pin or connect to GND if redundant OVP is not needed. RF 22 I Switching frequency selection. Connect a resistor to GND or VREG to select switching frequency using Table 2. The switching frequency is detected and stored during the startup. TRIP 21 I OCL detection threshold setting pin. ITRIP = 10 A at room temperature, 3000 ppm/C current is sourced and set the OCL trip voltage as follows. space VOCL=VTRIP/32 (VTRIP 2.4 V, VOCL 75 mV) VBST 4 P Supply input for high-side FET gate driver (boost terminal). Connect capacitor from this pin to LL node. Internally connected to VREG via bootstrap MOSFET switch. VDD 19 P Controller power supply input. VDD input voltage range is from 4.5 V to 25 V. VFB 1 I Output feedback input. Connect this pin to VOUT through a resistor divider. P Conversion power input.The conversion input voltage range is from 1.5 V to 22 V. 12 13 VIN 14 15 16 17 (1) I=Input, O=Output, B=Bidirectional, P=Supply, G=Ground Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 5 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com PIN FUNCTIONS (continued) PIN NAME NO. VREG 18 I/O/P (1) P DESCRIPTION 5-V low drop out (LDO) output. Supplies the internal analog circuitry and driver circuitry. BLOCK DIAGRAM 0.6 V +10/15% 0.6 V -30% + UV PGOOD + Delay Delay + ROVP + 0.6 V -5/10% OV Ramp Compensation Control Logic + UVP/OVP Logic +20% VFB + 0.6 V SS VREG RF VBST + + PWM VIN 10 ?A GND TRIP tON OneShot + + OCP LL LL XCON + GND MODE ZC Control Logic SS FCCM/ Skip Decode EN * * * * * + 1.3 V/1.0 V GND LL Fault Shutdown On/Off time Minimum On /Off Light load OVP/UVP FCCM/Skip VDDOK + VREG LDO VDD 4.2 V/ 3.95 V Enable + THOK 145C/ 135C TPS53318/TPS53319 UDG-12041 NOTE The thresholds shown in this diagram are typical numbers. Refer to the ELECTRICAL CHARACTERISTICS table for threshold tolerance. 6 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 APPLICATION CIRCUIT DIAGRAM C4 1 F R4 NI C3 1 F VVDD 4.5 V to 25 V R6 200 k? R8 120 k? 22 21 20 19 RF TRIP MODE VDD 18 17 VREG VIN VIN 12V 16 15 14 13 12 VIN VIN VIN VIN VIN TPS53318/TPS53319 CIN 22 F VFB ROVP LL EN PGOOD VBST 1 2 3 4 5 LL LL LL LL 7 8 9 10 11 VOUT 1.2V R7 3.01 k? C1 0.1 F COUT 4 x 100 F Ceramic R12 10 k? R2 10 k? CIN 22 F C5 0.1 F R9 0? PGOOD EN 6 LL CIN 22 F L1 0.5 ?H HCB1175B-501 GND VREG R10 100 k? CIN 22 F C6 NI R11 9.76 k? R1 9.76 k? C2 1 nF R13 NI UDG-12076 Figure 1. Typical Application Circuit with Ceramic Output Capacitors, ROVP Function Used C4 1 F R4 NI C3 1 F R6 200 k? VVDD 4.5 V to 25 V VIN 12V R8 120 k? 22 21 20 19 RF TRIP MODE VDD 18 17 VREG VIN 16 15 14 13 12 VIN VIN VIN VIN VIN TPS53318/TPS53319 C IN 22 F C IN 22 F C IN 22 F C IN 22 F GND VREG VOUT 1.2V L1 0.5 ?H HCB 1175B-501 R10 100 k? VFB EN PGOOD 1 2 3 VBST ROVP LL 4 PGOOD EN 5 6 LL LL LL LL LL 7 8 9 10 11 R9 0? R11 NI C6 NI C OUT 330 F C OUT 330 F C5 0.1 F R2 10 k? R1 10 k? UDG-12077 Figure 2. Typical Application Circuit with Bulk Output Capacitors, ROVP Function Not Used Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 7 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com 700 160 600 140 VDD Shutdown Current (A) VDD Supply Current (A) TYPICAL CHARACTERISTICS 500 400 300 200 VEN = 5V VVDD = 12 V VVFB = 0.63 V No Load 100 0 -40 -25 -10 5 20 35 50 65 80 Junction Temperature (C) 95 100 80 60 40 0 -40 -25 -10 110 125 G001 95 110 125 G001 140 OVP/UVP Trip Threshold (%) 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 120 100 80 60 40 20 OVP UVP RTRIP = 66.5 k 4.0 -40 -25 -10 5 20 35 50 65 80 Junction Temperature (C) 95 0 -40 -25 -10 110 125 G001 Figure 5. Valley OCP Threshold vs Temperature FCCM Skip Mode 10 VIN = 12 V VOUT = 1.2 V fSW = 300 kHz 1 0.01 95 110 125 G001 1000 Switching Frequency (kHz) 100 5 20 35 50 65 80 Junction Temperature (C) Figure 6. OVP/UVP Trip Threshold vs. Junction Temperature 1000 Switching Frequency (kHz) 5 20 35 50 65 80 Junction Temperature (C) Figure 4. VDD Shutdown Current vs. Junction Temperature 6.0 0.1 1 Output Current (A) 10 20 Submit Documentation Feedback 100 FCCM Skip Mode 10 VIN = 12 V VOUT = 1.2 V fSW = 500 kHz 1 0.01 0.1 G001 Figure 7. Switching Frequency vs. Output Current 8 VEN = 0 V VVDD = 12 V No Load 20 Figure 3. VDD Supply Current vs. Junction Temperature Valley OCP Threshold (A) 120 1 Output Current (A) 10 20 G001 Figure 8. Switching Frequency vs. Output Current Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 TYPICAL CHARACTERISTICS (continued) 1000 Switching Frequency (kHz) Switching Frequency (kHz) 1000 100 10 VIN = 12 V VOUT = 1.2 V fSW = 750 kHz FCCM Skip Mode 1 0.01 0.1 1 Output Current (A) 10 1 0.01 20 1 Output Current (A) 10 20 G001 1.220 TPS53319 fSW = 500 kHz VIN = 12 V VOUT = 1.2 V 1.215 Output Voltage (V) 800 600 400 200 fSET = 300 kHz fSET = 500 kHz VIN = 12 V IOUT = 5 A 0 1 2 fSET = 750 kHz fSET = 1 MHz 3 4 Output Voltage (V) 5 1.210 1.205 1.200 1.195 1.190 Skip Mode FCCM 1.185 1.180 6 0 3 6 9 Output Current (A) G000 Figure 11. Switching Frequency vs. Output Voltage 12 15 G001 Figure 12. Output Voltage vs. Output Current 1.220 100 fSW = 500 kHz VIN = 12 V 1.215 90 80 1.210 Efficiency (%) Output Voltage (V) VIN = 12 V VOUT = 1.2 V fSW = 1 MHz Figure 10. Switching Frequency vs. Output Current 1000 1.205 1.200 1.195 70 60 TPS53319 VIN = 12 V VOUT = 1.2 V 50 40 30 1.190 FCCM, IOUT = 0 A Skip Mode, IOUT = 0 A FCCM and Skip Mode, IOUT = 14 A 1.185 1.180 0.1 G001 1200 Switching Frequency (kHz) 10 FCCM Skip Mode Figure 9. Switching Frequency vs. Output Current 0 100 4 8 12 16 Input Voltage (V) 20 Skip Mode, fSW = 500 kHz FCCM, fSW = 500 kHz Skip Mode, fSW = 300 kHz FCCM, fSW = 300 kHz 20 10 24 0 0.01 0.1 G000 Figure 13. Output Voltage vs. Input Voltage 1 Output Current (A) 10 15 G001 Figure 14. Efficiency vs Output Current Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 9 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com TPS53319 TYPICAL CHARACTERISTICS 98 98 TPS53319 94 94 90 90 Efficiency (%) Efficiency (%) TPS53319 86 82 78 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 0 2 4 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 6 8 10 Output Current (A) 14 82 78 FCCM VIN = 12 V VVDD = 5 V fSW = 300 kHz 12 86 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 16 0 2 4 G001 Figure 15. Efficiency vs Output Current VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 6 8 10 Output Current (A) Skip Mode VIN = 12 V VVDD = 5 V fSW = 300 kHz 12 14 16 G001 Figure 16. Efficiency vs Output Current 98 98 94 94 90 90 Efficiency (%) Efficiency (%) TPS53319 86 82 78 VOUT = 5.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 0 2 4 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 6 8 10 Output Current (A) 14 82 78 FCCM VIN = 12 V VVDD = 5 V fSW = 500 kHz 12 86 VOUT = 5.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 16 0 98 98 94 94 90 90 86 FCCM VIN = 5 V VVDD = 5 V fSW = 500 kHz 78 74 TPS53319 70 0 2 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 4 6 Output Current (A) 8 Submit Documentation Feedback 6 8 10 Output Current (A) 12 14 16 G001 86 Skip Mode VIN = 5 V VVDD = 5 V fSW = 500 kHz 82 78 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 74 TPS53319 10 70 0 2 G001 Figure 19. Efficiency vs Output Current 10 4 TPS53319 Skip Mode VIN = 12 V VVDD = 5 V fSW = 500 kHz Figure 18. Efficiency vs Output Current Efficiency (%) Efficiency (%) Figure 17. Efficiency vs Output Current 82 2 G000 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 4 6 Output Current (A) VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 8 10 G001 Figure 20. Efficiency vs Output Current Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 TPS53318 TYPICAL CHARACTERISTICS 98 98 TPS53318 94 94 90 90 Efficiency (%) Efficiency (%) TPS53318 86 FCCM VIN = 12 V VVDD = 5 V fSW = 300 kHz 82 78 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 0 1 2 3 8 9 Skip Mode VIN = 12 V VVDD = 5 V fSW = 300 kHz 82 78 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 4 5 6 7 Output Current (A) 86 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 10 0 Figure 21. Efficiency vs Output Current 94 90 90 Efficiency (%) Efficiency (%) 4 5 6 7 Output Current (A) 8 9 10 G001 TPS53318 94 86 82 78 VOUT = 5.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 0 1 2 3 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 4 5 6 7 Output Current (A) 9 82 78 FCCM VIN = 12 V VVDD = 5 V fSW = 500 kHz 8 86 VOUT = 5.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 70 10 0 94 94 90 90 Efficiency (%) 98 86 FCCM VIN = 5 V VVDD = 5 V fSW = 500 kHz 78 VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 TPS53318 0 1 2 3 3 8 Figure 25. Efficiency vs Output Current 4 5 6 7 Output Current (A) Skip Mode VIN = 12 V VVDD = 5 V fSW = 500 kHz 8 9 10 G000 9 86 Skip Mode VIN = 5 V VVDD = 5 V fSW = 500 kHz 82 78 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 4 5 6 7 Output Current (A) 2 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V Figure 24. Efficiency vs Output Current 98 82 1 G000 Figure 23. Efficiency vs Output Current Efficiency (%) 3 98 TPS53318 70 2 Figure 22. Efficiency vs Output Current 98 70 1 G001 VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V VOUT = 3.3 V VOUT = 1.8 V VOUT = 1.5 V 74 TPS53318 10 70 0 1 G001 2 3 4 5 6 7 Output Current (A) VOUT = 1.2 V VOUT = 1.1 V VOUT = 1.0 V 8 9 10 G001 Figure 26. Efficiency vs Output Current Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 11 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com TYPICAL CHARACTERISTICS 12 Figure 27. Start-Up Figure 28. Pre-Bias Start-Up Figure 29. Shutdown Figure 30. UVLO Start-Up Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 TYPICAL CHARACTERISTICS (continued) Figure 31. 1.1-V Output FCCM Mode Steady-State Operation Figure 32. 1.1-V Output Skip Mode Steady-State Operation Figure 33. CCM to DCM Transition Figure 34. DCM to CCM Transition Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 13 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) 14 Figure 35. FCCM Load Transient Figure 36. Skip Mode Load Transeint Figure 37. Overcurrent Protection Figure 38. Over-temperature Protection Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 TYPICAL CHARACTERISTICS (continued) Figure 39. Short Circuit Protection . THERMAL CHARACTERISTICS Thermal signatures for the TPS53319 EVM, VIN = 12 V, IOUT = 14 A, fSW = 500 kHz, TA = 25C, No airflow Figure 40. VOUT = 1.2 V Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Figure 41. VOUT = 5.0 V Submit Documentation Feedback 15 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com APPLICATION INFORMATION General Description The TPS53318 and TPS53319 are high-efficiency, single channel, synchronous buck converters suitable for low output voltage point-of-load applications in computing and similar digital consumer applications. The device features proprietary D-CAPTM mode control combined with an adaptive on-time architecture. This combination is ideal for building modern low duty ratio, ultra-fast load step response DC-DC converters. The output voltage ranges from 0.6 V to 5.5 V. The conversion input voltage range is from 1.5 V to 22 V and the VDD bias voltage is from 4.5 V to 25 V. The D-CAPTM mode uses the equivalent series resistance (ESR) of the output capacitor(s) to sense the device current . One advantage of this control scheme is that it does not require an external phase compensation network. This allows a simple design with a low external component count. Eight preset switching frequency values can be chosen using a resistor connected from the RF pin to ground or VREG. Adaptive ontime control tracks the preset switching frequency over a wide input and output voltage range while allowing the switching frequency to increase at the step-up of the load. These devices have a MODE pin to select between auto-skip mode and forced continuous conduction mode (FCCM) for light load conditions. The MODE pin also sets the selectable soft-start time ranging from 0.7 ms to 5.6 ms as shown in Table 1. 5-V LDO and VREG Start-Up Both the TPS53318 and TPS53319 have an internal 5-V LDO feature using input from VDD and output to VREG. When the VDD voltage rises above 1 V, the internal LDO is enabled and outputs voltage to the VREG pin. The VREG voltage provides the bias voltage for the internal analog circuitry. It also provides the supply voltage for the gate drives. NOTE The 5-V LDO is not controlled by the EN pin. It starts up whenever VDD rises to approximately 2 V. (see Figure 31). Enable, Soft Start, and Mode Selection When the EN pin voltage rises above the enable threshold voltage (typically 1.3 V), the controller enters its startup sequence. The internal LDO regulator starts immediately and regulates to 5 V at the VREG pin. The controller then uses the first 250 s to calibrate the switching frequency setting resistance attached to the RF pin and stores the switching frequency code in internal registers. During this period, the MODE pin also senses the resistance attached to this pin and determines the soft-start time . Switching is inhibited during this phase. In the second phase, an internal DAC starts ramping up the reference voltage from 0 V to 0.6 V. Depending on the MODE pin setting, the ramping up time varies from 0.7 ms to 5.6 ms. Smooth and constant ramp-up of the output voltage is maintained during start-up regardless of load current. Table 1. Soft-Start and MODE Settings MODE SELECTION Auto Skip Forced CCM (1) (1) 16 ACTION Pull down to GND Connect to PGOOD SOFT-START TIME (ms) RMODE (k) 0.7 39 1.4 100 2.8 200 5.6 475 0.7 39 1.4 100 2.8 200 5.6 475 Device enters FCCM after the PGOOD pin goes high when MODE is connected to PGOOD through the resistor RMODE. Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 After soft-start begins, the MODE pin becomes the input of an internal comparator which determines auto skip or FCCM mode operation. If MODE voltage is higher than 1.3 V, the converter enters into FCCM mode. Otherwise it will be in auto skip mode at light load condition. Typically, when FCCM mode is selected, the MODE pin is connected to PGOOD through the RMODE resistor, so that before PGOOD goes high the converter remains in auto skip mode. Adaptive On-Time D-CAPTM Control and Frequency Selection Neither the TPS53318 nor the TPS53319 has a dedicated oscillator to determine switching frequency. However, the device operates with pseudo-constant frequency by feed-forwarding the input and output voltages into the on-time one-shot timer. The adaptive on-time control adjusts the on-time to be inversely proportional to the input voltage and proportional to the output voltage (tON VOUT/VIN). This makes the switching frequency fairly constant in steady state conditions over a wide input voltage range. The switching frequency is selectable from eight preset values by a resistor connected between the RF pin and GND or between the RF pin and the VREG pin as shown in Table 2. (Maintaining open resistance sets the switching frequency to 500 kHz.) Table 2. Resistor and Switching Frequency RESISTOR (RRF) CONNECTIONS VALUE (k) CONNECT TO SWITCHING FREQUENCY (fSW) (kHz) 0 GND 250 187 GND 300 619 GND 400 OPEN n/a 500 866 VREG 600 309 VREG 750 124 VREG 850 0 VREG 970 The off-time is modulated by a PWM comparator. The VFB node voltage (the mid-point of resistor divider) is compared to the internal 0.6-V reference voltage added with a ramp signal. When both signals match, the PWM comparator asserts a set signal to terminate the off time (turn off the low-side MOSFET and turn on high-side MOSFET). The set signal is valid if the inductor current level is below the OCP threshold, otherwise the off time is extended until the current level falls below the threshold. Figure 42 , Figure 43 show two on-time control schemes. VFB VFB VREF VREF tON Compensation Ramp PWM PWM tON tOFF tOFF UDG-10208 Figure 42. On-Time Control Without Ramp Compensation UDG-10209 Figure 43. On-Time Control With Ramp Compensation Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 17 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com Ramp Signal The TPS53318 and TPS53319 add a ramp signal to the 0.6-V reference in order to improve jitter performance. As described in the previous section, the feedback voltage is compared with the reference information to keep the output voltage in regulation. By adding a small ramp signal to the reference, the signal-to-noise ratio at the onset of a new switching cycle is improved. Therefore the operation becomes less jittery and more stable. The ramp signal is controlled to start with -7 mV at the beginning of an on-cycle and becomes 0 mV at the end of an off-cycle in steady state. During skip mode operation, under discontinuous conduction mode (DCM), the switching frequency is lower than the nominal frequency and the off-time is longer than the off-time in CCM. Because of the longer off-time, the ramp signal extends after crossing 0 mV. However, it is clamped at 3 mV to minimize the DC offset. Auto-Skip Eco-modeTM Light Load Operation While the MODE pin is pulled low via RMODE, the controller automatically reduces the switching frequency at light load conditions to maintain high efficiency. Detailed operation is described as follows. As the output current decreases from heavy load condition, the inductor current is also reduced and eventually comes to the point that its rippled valley touches zero level, which is the boundary between continuous conduction and discontinuous conduction modes. The synchronous MOSFET is turned off when this zero inductor current is detected. As the load current further decreases, the converter runs into discontinuous conduction mode (DCM). The on-time is kept almost the same as it was in the continuous conduction mode so that it takes longer time to discharge the output capacitor with smaller load current to the level of the reference voltage. The transition point to the lightload operation IOUT(LL) (i.e., the threshold between continuous and discontinuous conduction mode) can be calculated as shown in Equation 1. IOUT(LL ) = (VIN - VOUT ) VOUT 1 2 L fSW VIN where * SW is the PWM switching frequency (1) Switching frequency versus output current in the light load condition is a function of L, VIN and VOUT, but it decreases almost proportionally to the output current from the IOUT(LL) given in Equation 1. For example, it is 60 kHz at IOUT(LL)/5 if the frequency setting is 300 kHz. Adaptive Zero Crossing The TPS53318 and TPS53319 have an adaptive zero crossing circuit which performs optimization of the zero inductor current detection at skip mode operation. This function pursues ideal low-side MOSFET turning off timing and compensates inherent offset voltage of the Z-C comparator and delay time of the Z-C detection circuit. It prevents SW-node swing-up caused by too late detection and minimizes diode conduction period caused by too early detection. As a result, better light load efficiency is delivered. Forced Continuous Conduction Mode When the MODE pin is tied to PGOOD through a resistor, the controller keeps continuous conduction mode (CCM) in light load condition. In this mode, switching frequency is kept almost constant over the entire load range which is suitable for applications need tight control of the switching frequency at a cost of lower efficiency. Output Discharge Control When the EN pin becomes low, the TPS53318 and TPS53319 discharge the output capacitor using the internal MOSFET connected between the SW pin and the PGND pin while the high-side and low-side MOSFETs are maintained in the OFF state. The typical discharge resistance is 75 . The soft discharge occurs only as EN becomes low. The discharge circuit is powered by VDD. While VDD remains high, the discharge circuit remains active. 18 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 Power-Good The TPS53318 and TPS53319 have power-good output that indicates high when switcher output is within the target. The power-good function is activated after soft-start has finished. If the output voltage becomes within +10% and -5% of the target value, internal comparators detect power-good state and the power-good signal becomes high after a 1-ms internal delay. If the output voltage goes outside of +15% or -10% of the target value, the power-good signal becomes low after two microsecond (2-s) internal delay. The power-good output is an open drain output and must be pulled up externally. The power-good MOSFET is powered through the VDD pin. VVDD must be >1 V in order to have a valid powergood logic. It is recommended to pull PGOOD up to VREG (or a voltage divided from VREG) so that the powergood logic is still valid even without VDD supply. Current Sense, Overcurrent and Short Circuit Protection The TPS53318 and TPS53319 have cycle-by-cycle overcurrent limiting control. The inductor current is monitored during the OFF state and the controller maintains the OFF state during the period in that the inductor current is larger than the overcurrent trip level. In order to provide both good accuracy and cost effective solution, TPS53319 supports temperature compensated MOSFET RDS(on) sensing. The TRIP pin should be connected to GND through the trip voltage setting resistor, RTRIP. The TRIP terminal sources current (ITRIP) which is 10 A typically at room temperature, and the trip level is set to the OCL trip voltage VTRIP as shown in Equation 2. VTRIP (mV ) = RTRIP (kW ) ITRIP (mA ) (2) The inductor current is monitored by the LL pin. The GND pin is used as the positive current sensing node and the LL pin is used as the negative current sense node. The trip current, ITRIP has a 3000ppm/C temperature slope to compensate the temperature dependency of the RDS(on). For each device, ITRIP is also adjusted based on the device-specific on-resistance measurement in production tests to eliminate the any OCP variation from device to device. As the comparison is made during the OFF state, VTRIP sets the valley level of the inductor current. Thus, the load current at the overcurrent threshold, IOCP, can be calculated as shown in Equation 3. IOCP = VTRIP (32 RDS(on) ) + IIND(ripple) 2 = (VIN - VOUT ) VOUT RTRIP 1 + 12.3 2 L fSW VIN where * RTRIP is in k (3) In an overcurrent or short circuit condition, the current to the load exceeds the current to the output capacitor thus the output voltage tends to decrease. Eventually, it crosses the undervoltage protection threshold and shuts down. After a hiccup delay (16 ms with 0.7 ms sort-start), the controller restarts. If the overcurrent condition remains, the procedure is repeated and the device enters hiccup mode. For the TPS53318, the OCP threshold is internally clamped to 10.5 A. The RTRIP for TPS53318 should be less than 150 k. Overvoltage and Undervoltage Protection The TPS53318 and TPS53319 monitor the resistor divided feedback voltage to detect over and under voltage. When the feedback voltage becomes lower than 70% of the target voltage, the UVP comparator output goes high and an internal UVP delay counter begins counting. After 1 ms, the TPS53319 latches OFF both high-side and low-side MOSFETs drivers. The controller restarts after a hiccup delay (16 ms with 0.7 ms soft-start). This function is enabled 1.5-ms after the soft-start is completed. When the feedback voltage becomes higher than 120% of the target voltage, the OVP comparator output goes high and the circuit latches OFF the high-side MOSFET driver and latches ON the low-side MOSFET driver. The output voltage decreases. Before the latch-off action for both the high-side and low-side drivers, the output voltage must be pulled down below the UVP threshold voltage for a period of 1 ms. After the 1 ms period, the drivers are latched off. Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 19 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com Redundant Overvoltage Protection (OVP) The TPS53318 and TPS53319 have a redundant input for OVP protection. The ROVP pin senses the voltage divided from output voltage and sends it to the OVP comparator. If this voltage is higher than 120% of the target voltage, the overvoltage protection engages and the low-side FET is turned on. When the output voltage is lower than the UVP threshold then the device latches off. This redundant OVP function typically protects again the feedback loop open or VFB short to GND. The ROVP pin has an internal 1.5-M pull-down resistor. If the redundent OVP feature is not needed then simply leave the ROVP pin floating or connect it to GND. UVLO Protection The TPS53318 and TPS53319 use VREG undervoltage lockout protection (UVLO). When the VREG voltage is lower than 3.95 V, the device shuts off. When the VREG voltage is higher than 4.2V, the device restarts. This is a non-latch protection. Thermal Shutdown The TPS53318 and TPS53319 monitor the internal die temperature. If the temperature exceeds the threshold value (typically 145C), the device shuts down. When the temperature falls about 10C below the threshold value, the device will turn back on. This is a non-latch protection. Small Signal Model From small-signal loop analysis, a buck converter using D-CAPTM mode can be simplified as shown in Figure 44. Switching Modulator VIN VIN R1 R2 VFB PWM + + Control Logic and Divider L LL VOUT IIND IC IOUT 0.6 V ESR R LOAD Voltage Divider VC COUT Output Capacitor UDG-12051 Figure 44. Simplified Modulator Model The output voltage is compared with the internal reference voltage (ramp signal is ignored here for simplicity). The PWM comparator determines the timing to turn on the high-side MOSFET. The gain and speed of the comparator can be assumed high enough to keep the voltage at the beginning of each on cycle substantially constant. 1 H (s ) = s ESR COUT (4) For loop stability, the 0-dB frequency, 0, defined below need to be lower than 1/4 of the switching frequency. f 1 SW f0 = 2p ESR COUT 4 (5) 20 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 According to the equation above, the loop stability of D-CAPTM mode modulator is mainly determined by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have an output capacitance in the order of several 100 F and ESR in range of 10 m. These makes 0 on the order of 100 kHz or less, creating a stable loop. However, ceramic capacitors have an 0 at more than 700 kHz, and need special care when used with this modulator. An application circuit for ceramic capacitor is described in the External Component Selection Using All Ceramic Output Capacitors section. Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 21 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com External Component Selection The external components selection is a simple process when using organic semiconductors or special polymer output capacitors. 1. SELECT OPERATION MODE AND SOFT-START TIME Select operation mode and soft-start time using Table 1. 2. SELECT SWITCHING FREQUENCY Select the switching frequency from 250 kHz to 1 MHz using Table 2. 3. CHOOSE THE INDUCTOR The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum output current. Larger ripple current increases output ripple voltage and improves signal-to-noise ratio and helps ensure stable operation, but increases inductor core loss. Using 1/3 ripple current to maximum output current ratio, the inductance can be determined by Equation 6. L= 1 IIND(ripple ) fSW (V IN(max ) - VOUT ) V VIN(max ) OUT = 3 IOUT(max ) fSW (V IN(max ) - VOUT VIN(max) ) V OUT (6) The inductor requires a low DCR to achieve good efficiency. It also requires enough room above peak inductor current before saturation. The peak inductor current can be estimated in Equation 7. IIND(peak ) = ( ) VIN(max ) - VOUT VOUT VTRIP 1 + 32 RDS(on ) L fSW VIN(max ) (7) 4. CHOOSE THE OUTPUT CAPACITOR(S) When organic semiconductor capacitor(s) or specialty polymer capacitor(s) are used, for loop stability, capacitance and ESR should satisfy Equation 5. For jitter performance, Equation 8 is a good starting point to determine ESR. 10mV (1 - D) 10mV L fSW L fSW V = = ESR = OUT (W ) 0.6 V IIND(ripple ) 0.6 V 60 where * * D is the duty factor. The required output ripple slope is approximately 10 mV per tSW (switching period) in terms of VFB terminal voltage. (8) 5. DETERMINE THE VALUE OF R1 AND R2 The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 44. R1 is connected between VFB pin and the output, and R2 is connected between the VFB pin and GND. Recommended R2 value is from 10 k to 20 k. Determine R1 using Equation 9. IIND(ripple ) ESR - 0.6 VOUT 2 R2 R1 = 0.6 (9) 22 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 6. CHOOSE THE OVERCURRENT SETTING RESISTOR The overcurrent setting resistor, RTRIP, can be determined by Equation 10. ae ae o (VIN - VOUT ) VOUT o 1 RTRIP = c IOCP - c / 12.3 / c / VIN e 2 L fSW o e o where * RTRIP is in k (10) External Component Selection Using All Ceramic Output Capacitors When a ceramic output capacitor is used, the stability criteria in Equation 5 cannot be satisfied. The ripple injection approach as shown in Figure 2 is implemented to increase the ripple on the VFB pin and make the system stable. In addition to the selections made using steps 1 through step 6 in the External Component Selection section, the ripple injection components must be selected. The C2 value can be fixed at 1 nF. The value of C1 can be selected between 10 nF to 200 nF. L COUT t > N ON R7 C1 2 where * N is the coefficient to account for L and COUT variation (11) N is also used to provide enough margin for stability. It is recommended N=2 for VOUT 1.8 V and N=4 for VOUT 3.3 V or when L 250 nH. The higher VOUT needs a higher N value because the effective output capacitance is reduced significantly with higher DC bias. For example, a 6.3-V, 22-F ceramic capacitor may have only 8 F of effective capacitance when biased at 5 V. Because the VFB pin voltage is regulated at the valley, the increased ripple on the VFB pin causes the increase of the VFB DC value. The AC ripple coupled to the VFB pin has two components, one coupled from SW node and the other coupled from the VOUT pin and they can be calculated using Equation 12 and Equation 13 when neglecting the output voltage ripple caused by equivalent series inductance (ESL). V - VOUT D VINJ _ SW = IN R7 C1 fSW (12) VINJ _ OUT = ESR IIND(ripple ) + IIND(ripple ) 8 COUT fSW (13) It is recommended that VINJ_SW to be less than 50 mV. If the calculated VINJ_SW is higher than 50 mV, then other parameters need to be adjusted to reduce it. For example, COUT can be increased to satisfy Equation 11 with a higher R7 value, thereby reducing VINJ_SW. The DC voltage at the VFB pin can be calculated by Equation 14: VINJ _ SW + VINJ _ OUT VVFB = 0.6 + 2 (14) And the resistor divider value can be determined by Equation 15: - VVFB V R2 R1 = OUT VVFB (15) Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 23 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com LAYOUT CONSIDERATIONS Certain points must be considered before beginining a design using the TPS53318 or TPS53319. * The power components (including input/output capacitors, inductor and TPS53318 or TPS53319) should be placed on one side of the PCB (solder side). At least one inner plane should be inserted, connected to ground, in order to shield and isolate the small signal traces from noisy power lines. * All sensitive analog traces and components such as VFB, PGOOD, TRIP, MODE and RF should be placed away from high-voltage switching nodes such as LL, VBST to avoid coupling. Use internal layer(s) as ground plane(s) and shield feedback trace from power traces and components. * Place the VIN decoupling capacitors as close to the VIN and PGND pins as possible to minimize the input AC current loop. * Because the TPS53319 controls output voltage referring to voltage across VOUT capacitor, the top-side resistor of the voltage divider should be connected to the positive node of the VOUT capacitor. The GND of the bottom side resistor should be connected to the GND pad of the device. The trace from these resistors to the VFB pin should be short and thin. * Place the frequency setting resistor (RF), OCP setting resistor (RTRIP) and mode setting resistor (RMODE) as close to the device as possible. Use the common GND via to connect them to GND plane if applicable. * Place the VDD and VREG decoupling capacitors as close to the device as possible. Ensure to provide GND vias for each decoupling capacitor and make the loop as small as possible. * The PCB trace defined as switch node, which connects the LL pins and high-voltage side of the inductor, should be as short and wide as possible. * Connect the ripple injection VOUT signal (VOUT side of the C1 capacitor in Figure 2) from the terminal of ceramic output capacitor. The AC coupling capacitor (C2 in Figure 2) should be placed near the device, and R7 and C1 can be placed near the power stage. * Use separated vias or trace to connect LL node to snubber, boot strap capacitor and ripple injection resistor. Do not combine these connections. 24 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 TPS53318, TPS53319 www.ti.com SLUSAY8B - JUNE 2012 - REVISED MAY 2013 GND shape VOUT shape VIN shape LL shape VDD Bottom side component and trace VREG VBST PGOOD VFB RF TRIP MODE EN GND VOUT Bottom side components and trace Keep VFB trace short and away from noisy signals To GND Plane Bottom side components and trace UDG-13111 Figure 45. Layout Recommendation Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 Submit Documentation Feedback 25 TPS53318, TPS53319 SLUSAY8B - JUNE 2012 - REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Original (JUNE 2012) to Revision A Page * Changed "<100 A Shut Down Current" to "<110 A Shut Down Current" in FEATURES ................................................. 1 * Changed "Green (RoHS and no Pb/Br)" to "Pb-Free (RoHS Exempt)" in ORDERING INFORMATION table .................... 2 Changes from Revision A (AUGUST 2012) to Revision B Page * Added clarity to Overvoltage and Undervoltage Protection section ................................................................................... 19 * Changed updated Figure 45 ............................................................................................................................................... 25 26 Submit Documentation Feedback Copyright (c) 2012-2013, Texas Instruments Incorporated Product Folder Links: TPS53318 TPS53319 PACKAGE OPTION ADDENDUM www.ti.com 23-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (C) Top-Side Markings (3) (4) TPS53318DQPR ACTIVE SON DQP 22 2500 Pb-Free (RoHS Exempt) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 53318DQP TPS53318DQPT ACTIVE SON DQP 22 250 Pb-Free (RoHS Exempt) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 53318DQP TPS53319DQPR ACTIVE SON DQP 22 2500 Pb-Free (RoHS Exempt) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 53319DQP TPS53319DQPT ACTIVE SON DQP 22 250 Pb-Free (RoHS Exempt) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 53319DQP (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. 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Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 23-Apr-2013 Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 13-May-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TPS53318DQPR SON DQP 22 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 2500 330.0 12.4 5.3 6.3 1.8 8.0 12.0 Q1 TPS53318DQPT SON DQP 22 250 180.0 12.4 5.3 6.3 1.8 8.0 12.0 Q1 TPS53319DQPR SON DQP 22 2500 330.0 12.4 5.3 6.3 1.8 8.0 12.0 Q1 TPS53319DQPT SON DQP 22 250 180.0 12.4 5.3 6.3 1.8 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 13-May-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS53318DQPR SON DQP 22 2500 367.0 367.0 35.0 TPS53318DQPT SON DQP 22 250 210.0 185.0 35.0 TPS53319DQPR SON DQP 22 2500 367.0 367.0 35.0 TPS53319DQPT SON DQP 22 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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