© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C25A
IDM TC= 25°C, pulse width limited by TJM 100 A
IAR TC= 25°C25A
EAR TC= 25°C80mJ
EAS TC= 25°C 3.4 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120 /4.5..25 N/lb
Weight 5g
G = Gate D = Drain
S = Source
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 800 μA 800 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ± 30 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0 V TJ = 125°C 1.5 mA
RDS(on) VGS = 10 V, ID = IT, Note 1 200 mΩ
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR 44N80P VDSS = 800 V
ID25 =25 A
RDS(on) ≤≤
≤≤
≤200 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
DS99504E(06/06)
Isolated Tab
Electrically Isolated Tab
Features
zSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zLow drain to tab capacitance(<30pF)
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zFast intrinsic Rectifier
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
Advantages
zEasy assembly
zSpace savings
zHigh power density
ISOPLUS247 (IXFR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 44N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = IT, Note 1 27 43 S
Ciss 12 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 910 pF
Crss 30 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 44 A 22 ns
td(off) RG = 1 Ω (External) 75 ns
tf27 ns
Qg(on) 200 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT67 nC
Qgd 65 nC
RthJC 0.42 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 44 A
ISM Repetitive 100 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 22 A, -di/dt = 100 A/μs 250 ns
QRM VR = 100 V, VGS = 0 V 0.8 μC
IRM 8.0 A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Test current IT = 22 A.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS247 (IXFR) Outline
© 2006 IXYS All rights reserved
IXFR 44N80P
Fig . 2. Extended Output Charact eristics
@ 25
°
C
0
10
20
30
40
50
60
70
80
90
100
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Ou tput Charac terist ics
@ 125
°
C
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10121416
V
D S
- Volts
I
D
- Amperes
V
GS
= 10 V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
°
C
0
5
10
15
20
25
30
35
40
45
012345678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to I
D
= 22A
V alue vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- N orm al ized
I
D
= 44A
I
D
= 22A
V
GS
= 10V
Fig. 5. R
DS(on)
Normalized to I
D
= 2 2A
Va lue vs. Dra in Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 102030405060708090100
I
D
- Amperes
R
D S ( o n )
- N orm al ized
T
J
= 25
°
C
V
GS
= 10V T
J
= 12 5
°
C
Fig . 6. Drain Current vs. Case
Temperature
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
TC - Degr ees Centigr ade
I D - Am peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 44N80P
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200
Q
G
- NanoCoulombs
V
G S
- Vo lts
V
DS
= 400V
I
D
= 22A
I
G
= 10m A
Fig . 7 . Inpu t Admi ttanc e
0
10
20
30
40
50
60
70
3.544.555.566.5
V
G S
- Volts
I
D
- Am peres
T
J
= 125
°
C
25
°
C
- 40
°
C
Fig. 8. Transc onductance
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
I
D
- Amperes
g
f s
- S iemens
T
J
= - 40
°
C
25
°
C
125
°
C
Fi g. 9. Source Current vs.
Source-To-Drai n Voltage
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
S D
- Volts
I
S
- Am peres
T
J
= 125
°
C
T
J
= 25
°
C
Fig. 11. C a pacitance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
0.001 0.01 0.1 1 10
Pulse Width - Seconds
R( t h ) J C - ºC / W
