• 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. C
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS All ratings are at TA = 25oC unless otherwise specified.
RATING CONDITIONS MIN TYP MAX UNIT
Peak Inverse Voltage
(PIV) ← - - 45 Vdc
Average DC Output
Current (Io) ↑ - - 1.0 Amps
Peak Single Cycle Surge
Current (Ifsm) tp = 8.3 ms Single Half
Cycle Sine Wave,
Superimposed On
Rated Load
- - 25 Amps(pk)
Thermal Resistance (θJL) Junction to Lead
d = 0.375” - - 70 °C/W
Thermal Resistance (θJEC) Junction to Endcap - - 40 °C/W
Junction Temperature (TJ) - -55 - +125 °C
Operating Temperature
(Top) - -55 - +125
°C
Storage Temp. (Tstg) - -55 - +150 °C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC CONDITIONS MIN TYP MAX UNIT
Maximum Forward
Voltage (Vf) IF = 1.0A (300 µsec
pulse, duty cycle <
2%)
- - 0.49 Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25° C
TA = 100° C - - 0.05
4.0
µAmps
mAmps
Junction Capacitance (CJ) VR = 5 V dc
0.01 ≤ f ≤ 1MHz
Vsig = 15 mV p-p
-
-
70
pF
Notes: - All ratings are at TA = 25°C unless otherwise specified.
- Maximum storage temperature range: -55°C to +150°C.
- Maximum operating temperature range: -55°C to +125°C (1N5819-1, 1N5819UR-1).
← Derate linearly at 4.5 V/°C above TL or TEC = +100°C (1N5819-1), where TEC is at L = .375 inch.
↑ Derate linearly at 14 mA/°C above TL or TEC = +55°C (1N5819-1), where TEC is at L = .375 inch.
1N5819-1
1N5819UR-1
JAN
JANTX
JANTXV
• 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - sales@sensitron.com •
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. C
AXIAL MELF
SCHOTTKY BARRIER 1N5819-1 SCHOTTKY BARRIER 1N5819UR-1
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS) PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
STYLE φB φD G L STYLE A B C D
DO-41 .028/.034
0.71/0.86 .08/.107
.203/.272 .160/.205
.406/.521 1.00/1.30
2.54/3.302
DO-213AB .189/.205
.480/.521 .016/.022
0.41/0.56 0.001 Min
0.03 Min .094/.105
2.39/2.67
1N5819-1
1N5819UR-1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage Drop - V F (V)
10-3
10-2
10-1
100
Instantaneous Forward Current - I F (A)
Typical Forward Characteristics
100 °C
125 °C
25 °C
0 102030405060
Reverse Voltage - V R (V)
10-3
10-2
10-1
100
101
102
Instantaneous Reverse Current - I R (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
0 102030405060
Reverse Voltage - V R (V)
10
20
30
40
50
Junction Capacitance - C T (pF)
Typical Junction Capacitance
• 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - sales@sensitron.com •
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
1N5819-1
1N5819UR-1
