IRGMIC50U - International Rectifier

IRGMIC50U

INSULATED GATE BIPOLAR TRANSISTOR

Features

VCES = 600V

VCE(on) max = 3.0V

@VGE = 15V, IC = 27A

Parameter Max. Units

VCES Collector-to-Emitter Breakdown Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 45*

IC @ TC = 100°C Continuous Collector Current 27 A

ICM Pulsed Collector Current ➀➀

➀➀

➀220

ILM Clamped Inductive Load Current ➁➁

➁➁

➁180

VGE Gate-to-Emitter Voltage ±20 V

PD @ TC = 25°C Maximum Power Dissipation 200 W

PD @ TC = 100°C Maximum Power Dissipation 80

TJOperating Junction and -55 to + 150

TSTG Storage Temperature Range °C

Lead Temperature 300 (0.063in./1.6mm from case for 10s)

Weight 10.5 (typical) g

Absolute Maximum Ratings

02/20/02

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Ultra Fast Speed IGBT

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

• Latch-proof

• Ultra Fast operation > 10 kHz

• Switching-loss rating includes all "tail" losses

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at the

same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, high-current

applications.

TO-259AA

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case-IGBT — — 0.625

RthJC Junction-to-Case-Diode — — 1.0

RthCS Case-to-Sink — 0.21 —

RthJA Junction-to-Ambient — — 30

°C/W

PD -90813A

The performance of various IGBTs varies greatly with frequency. Note that IR now

provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),

as well as an indication of the current handling capability

of the device.

Description

*Current is limited by pin diameter

WITH ON-BOARD REVERSE DIODE

n-channel

For footnotes refer to the last page

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IRGMIC50U

Parameter Min. Typ. Max. Units Conditions

QgTotal Gate Charge (turn-on) ––– ––– 140 IC = 27A

Qge Gate - Emitter Charge (turn-on) ––– ––– 35 nC VCC = 300V See Fig. 8

Qgc Gate - Collector Charge (turn-on) ––– ––– 70 VGE = 15V

td(on) Turn-On Delay Time ––– ––– 50 IC = 27A, VCC = 480V

trRise Time ––– ––– 75 VGE = 15V, RG = 2.35Ω

td(off) Turn-Off Delay Time ––– ––– 300 Energy losses include "tail"

tfFall Time ––– ––– 210 See Fig. 9, 10, 13

Eon Turn-On Switching Loss ––– 0.12 –––

Eoff Turn-off Switching Loss ––– 1.6 –––

Ets Total Switching Loss ––– 1.7 2.8

td(on) Turn-On Delay Time ––– 24 ––– TJ = 125°C

trRise Time ––– 27 ––– C = 27A, VCC = 480V

td(off) Turn-Off Delay Time ––– 180 ––– VGE = 15V, RG = 2.35Ω

tfFall Time ––– 130 ––– Energy losses include "tail"

Ets Total Switching Loss ––– 2.7 ––– See Fig. 11, 13

LC+LETotal Inductance ––– 6.8 ––– nH Measured from Collector lead (6mm/

0.25in. from package) to Emitter

lead (6mm / 0.25in. from package)

Cies Input Capacitance ––– 2900 ––– VGE = 0V

Coes Output Capacitance ––– 330 ––– pF VCC = 30V See Fig. 7

Cres Reverse Transfer Capacitance ––– 41 ––– ƒ = 1.0MHz

Trr Diode Peak Reverse Recovery ––– ––– 100 di/dt = 200A/µS, IF = 27A

Time VR ≤ 200V

Qrr Diode Peak Reverse Recovery ––– ––– 375 di/dt = 200A/µS, IF = 27A

Charge TJ = 125°C, VR ≤ 200V

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– VV

GE = 0V, IC = 1.0 mA

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.6 ––– V/°CV

GE = 0V, IC = 1.0 mA

––– ––– 3.0 IC = 27A VGE = 15V

VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– 3.25 IC = 45A See Fig. 5

––– ––– 2.85 IC = 27A , TJ = 125°C

VGE(th) Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA

∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ––– -13 ––– mV/°CV

CE = VGE, IC = 250 µA

gfe Forward Transconductance ➂➂

➂➂

➂16 ––– ––– SV

CE = 100V, IC = 27A

––– ––– 250 VGE = 0V, VCE = 480V

––– ––– 5000 VGE = 0V, VCE = 480V, TJ = 125°C

IGES Gate-to-Emitter Leakage Current ––– ––– ±100 VGE = ±20

VFM Diode Forward Voltage Drop ––– ––– 1.7 IC = 27A

––– ––– 1.5 IC = 27A , TJ = 125°C

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ICES Zero Gate Voltage Collector Current µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

For footnotes refer to the last page

Note: Corresponding Spice and Saber models are available on the Website.