IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR
Features
VCES = 600V
VCE(on) max = 3.0V
@VGE = 15V, IC = 27A
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 45*
IC @ TC = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current ➀➀
➀➀
➀220
ILM Clamped Inductive Load Current ➁➁
➁➁
➁180
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 80
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Lead Temperature 300 (0.063in./1.6mm from case for 10s)
Weight 10.5 (typical) g
Absolute Maximum Ratings
02/20/02
www.irf.com 1
Ultra Fast Speed IGBT
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Ultra Fast operation > 10 kHz
• Switching-loss rating includes all "tail" losses
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
TO-259AA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case-IGBT — — 0.625
RthJC Junction-to-Case-Diode — — 1.0
RthCS Case-to-Sink — 0.21 —
RthJA Junction-to-Ambient — — 30
°C/W
PD -90813A
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability
of the device.
Description
*Current is limited by pin diameter
WITH ON-BOARD REVERSE DIODE
E
G
n-channel
C
For footnotes refer to the last page
2www.irf.com
IRGMIC50U
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) ––– ––– 140 IC = 27A
Qge Gate - Emitter Charge (turn-on) ––– ––– 35 nC VCC = 300V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ––– ––– 70 VGE = 15V
td(on) Turn-On Delay Time ––– ––– 50 IC = 27A, VCC = 480V
trRise Time ––– ––– 75 VGE = 15V, RG = 2.35Ω
td(off) Turn-Off Delay Time ––– ––– 300 Energy losses include "tail"
tfFall Time ––– ––– 210 See Fig. 9, 10, 13
Eon Turn-On Switching Loss ––– 0.12 –––
Eoff Turn-off Switching Loss ––– 1.6 –––
Ets Total Switching Loss ––– 1.7 2.8
td(on) Turn-On Delay Time ––– 24 ––– TJ = 125°C
trRise Time ––– 27 ––– C = 27A, VCC = 480V
td(off) Turn-Off Delay Time ––– 180 ––– VGE = 15V, RG = 2.35Ω
tfFall Time ––– 130 ––– Energy losses include "tail"
Ets Total Switching Loss ––– 2.7 ––– See Fig. 11, 13
LC+LETotal Inductance ––– 6.8 ––– nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
Cies Input Capacitance ––– 2900 ––– VGE = 0V
Coes Output Capacitance ––– 330 ––– pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ––– 41 ––– ƒ = 1.0MHz
Trr Diode Peak Reverse Recovery ––– ––– 100 di/dt = 200A/µS, IF = 27A
Time VR ≤ 200V
Qrr Diode Peak Reverse Recovery ––– ––– 375 di/dt = 200A/µS, IF = 27A
Charge TJ = 125°C, VR ≤ 200V
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– VV
GE = 0V, IC = 1.0 mA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.6 ––– V/°CV
GE = 0V, IC = 1.0 mA
––– ––– 3.0 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– 3.25 IC = 45A See Fig. 5
––– ––– 2.85 IC = 27A , TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ––– -13 ––– mV/°CV
CE = VGE, IC = 250 µA
gfe Forward Transconductance ➂➂
➂➂
➂16 ––– ––– SV
CE = 100V, IC = 27A
––– ––– 250 VGE = 0V, VCE = 480V
––– ––– 5000 VGE = 0V, VCE = 480V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 VGE = ±20
VFM Diode Forward Voltage Drop ––– ––– 1.7 IC = 27A
––– ––– 1.5 IC = 27A , TJ = 125°C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
V
ns
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.
V
ns
nC
mJ
nA
