2N5684 - ON Semiconductor - Datasheet.Cloud

High-Current Complementary

Silicon Power Transistors

. . . designed for use in high–power amplifier and switching circuit

applications.

•High Current Capability –

IC Continuous = 50 Amperes.

•DC Current Gain –

hFE = 15–60 @ IC = 25 Adc

•Low Collector–Emitter Saturation Voltage –

VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

2N5684

2N5686

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

80

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎÎ

80

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current – Continuous

ÎÎÎÎÎ

IC

ÎÎÎÎÎÎÎ

50

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

IB

ÎÎÎÎÎÎÎ

15

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

300

1.715

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.584

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

300

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Derating

TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

250

150

100

50

200

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 10 1Publication Order Number:

2N5684/D

2N5684

2N5686

50 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

300 WATTS

CASE 197A–05

TO–204AE

PNP

NPN

2N5684 2N5686

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Note 2)

(IC = 0.2 Adc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

80

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

–

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎ

–

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

10

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

–

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 2)

(IC = 25 Adc, VCE = 2.0 Vdc)

(IC = 50 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

15

5.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

–

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (Note 2)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

5.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

–

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

–

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain – Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

2.0

ÎÎÎÎ

–

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N5684

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5686

ÎÎÎÎÎ

Cob

ÎÎÎ

–

ÎÎÎÎ

2000

1200

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

15

ÎÎÎÎ

–

ÎÎÎ

*Indicates JEDEC Registered Data.

Note 2: Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.

Figure 2. Switching Time Test Circuit

1.0

0.5

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

0.7

0.5

0.2

0.07

0.05

0.02

0.01 0.7 1.0 2.0 3.0 5.0 7.0 10 50

TJ = 25°C

IC/IB = 10

VCC = 30 V

0.03

0.3

30

0.1

20

2N5684 (PNP)

2N5686 (NPN)

tr

td

+2.0 V

0

tr ≤

20ns

-12V

10 to 100 µs

DUTY CYCLE ≈ 2.0%

RB

RL

VCC -30 V

TO SCOPE

tr ≤ 20 ns

VCC -30 V

TO SCOPE

tr ≤ 20 ns

RL

RB

+10V

0

-12V

10 to 100 µs

DUTY CYCLE ≈ 2.0%

tr ≤ 20ns

VBB +4.0 V

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

2N5684 2N5686

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3

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

θJC(t) = r(t) θJC

θJC = 0.584°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.05

0.02

0.01

SINGLE PULSE

0.1

1000

0.2

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

50

20

10

5.0

0.1 2.0 3.0 7.0 10 20 30 50 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

70

2.0

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

CURVES APPLY BELOW

RATED VCEO

dc

1.0 ms

500 µs

1.0

0.5

0.2

5.0

100 µs

5.0 ms

2N5684, 2N5686

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

 200C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

4.0

0.5

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.6

0.4

0.2 0.7 1.0 2.0 3.0 7.0 20 50

TJ = 25°C

IB1 = IB2

IC/IB = 10

VCE = 30 V

0.3

t, TIME (s)µ

ts

5.0

5000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

3000

1000

700

TJ = 25°C

0.8

3.0

30

2000

10

2N5684 (PNP)

2N5686 (NPN)

tf

Cib

2N5684 (PNP)

2N5686 (NPN)

Cob

Cib

2N5684 2N5686

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4

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

500

0.5

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

70

30

20

10

100

50

hFE, DC CURRENT GAIN

TJ = +150°C

+25°C

-55°C

7.0

200

300 VCE = 2.0 V

VCE = 10 V

3.0 30

PNP

2N5684

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

TJ = +150°C

+25°C

-55°C

VCE = 2.0 V

VCE = 10 V

NPN

2N5686

Figure 9. Collector Saturation Region

2.0

0.1

IB, BASE CURRENT (AMP)

00.2 1.0 2.0 5.0 10

0.8

0.4

IC = 10 A

TJ = 25°C

25 A

1.2

1.6

0.5 3.0

40 A

0.1

IB, BASE CURRENT (AMP)

0.2 1.0 2.0 5.0 10

IC = 10 A

TJ = 25°C

25 A

0.5 3.0

40 A

0.3

2.5

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

2.0

1.5

1.0

0.5

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

30

VBE @ VCE = 2.0 V

7.0

2.0

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

1.6

1.2

0.8

0.4

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

30

VBE @ VCE = 2.0 V

500

0.5

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

70

30

20

10

100

50

7.0

200

300

3.0 30

2.0

0

0.8

0.4

1.2

1.6

2N5684 2N5686

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5

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.30 (0.012) Y M

T

M

Y

M

0.25 (0.010) T

–Q–

–Y–

2

1

L

GB

V

H

U

2N5684 2N5686

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Notes

2N5684 2N5686

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Notes

2N5684 2N5686

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8

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