SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
PARTMARKING DETAILS BCX19 - U1
BCX20 - U2
BCX19R - U4
BCX20R - U5
COMPLEMENTARY TYPES - BCX19 - BCX17
BCX20 - BCX18
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCX19 BCX20 UNIT
Collector-Emitter Voltage VCES 50 30 V
Collector-Emitter Voltage VCEO 45 25 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1000 mA
Continuous Collector Current IC500 mA
Base Current IB100 mA
Peak Base Current IBM 200 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
ICBO 100
200
nA
µA
VCB =20V
VCB =20V, Tj=150°C
Emitter-Base Cut-Off
Current
IEBO 10 µAVEB
=5V
Base-Emitter Voltage VBE 1.2 V IC
=500mA, VCE =1V*
Collector-Emitter
Saturation Voltage
VCE(sat) 620 mV IC =500mA, IB
=50mA*
Static Forward Current
Transfer Ratio
hFE 100
70
40
600 IC
=100mA, VCE
=1V
IC
=300mA, VCE =1V*
IC
=500mA, VCE =1V*
Transition Frequency fT200 MHz IC
=10mA, VCE =5V
f =35MHz
Collector Capacitance CTC 5.0 pF IE =Ie =0, VCB =10V
f =1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCX19
BCX20
C
B
E
SOT23
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