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2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V / 2N7002VA Rev. 1.2
January 2015
2N7002V / 2N7002VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free by Design/RoHS Compliant
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
2N7002V AB SOT-563F 6L Tape and Reel
2N7002VA AC SOT-563F 6L Tape and Reel
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1.0 MΩ) 60 V
VGSS Gate-Source Voltage Continuous ±20 V
Pulsed ±40
IDDrain Current Continuous 280 mA
Pulsed 1.5 A
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
SOT-563F
(Pin4)
2N7002V 2N7002VA
* Pin1 and Pin4 are exchangeable.
G1D2 S1
G2S2 D1
S1D2 G1
S2G2 D1
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V / 2N7002VA Rev. 1.2 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. Short duration test pulse used to minimize self-heating effect.
Symbol Parameter Value Unit
PD
Total Device Dissipation 250 mW
Derate Above TA = 25°C 2.0 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient(1) 500 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics(2)
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA6078 V
IDSS Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V 0.001 1.0
μA
VDS = 60 V, VGS = 0 V,
TJ = 125°C7500
IGSS Gate-Body Leakage VGS = ±20 V, VDS = 0 V 0.2 ±100 nA
On Characteristics(2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA1.00 1.76 2.50 V
RDS(ON) Static Drain-Source On-Resistance
VGS = 5 V, ID = 0.05 A 1.6 7.5
Ω
VGS = 10 V, ID = 0.5 A 2.0
VGS = 10 V, ID = 0.5 A,
TJ = 125°C2.53 13.5
ID(ON) On-State Drain Current VGS = 10 V, VDS = 7.5 V 1.50 1.43 A
gFS Forward Transconductance VDS = 10 V, ID = 0.2 A 80 356.5 mS
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25 V, VGS= 0 V,
f = 1.0 MHz
37.8 50 pF
Coss Output Capacitance 12.4 25 pF
Crss Reverse Transfer Capacitance 6.5 7 pF
Switching Characteristics
tD(ON) Turn-On Delay Time VDD = 30 V, ID = 0.2 A,
VGEN = 10 V, RL = 150 Ω,
RGEN = 25 Ω
5.85 20 ns
tD(OFF) Turn-Off Delay Time 12.5 20 ns
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V / 2N7002VA Rev. 1.2 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Fi gure 2. On-Resistance Variation with Gate Volta ge
and Drain Current
Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation
with Gate-Source Voltage
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature
012345678910
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2V
3V
4V
5V
VGS = 10V
ID. DRAIN-SOURCE CURRENT(A)
VDS. DRAIN-SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
1.0
1.5
2.0
2.5
3.0
:
9V
8V
5V
6V
10V
7V
4V 4.5V
VGS = 3V
RDS(on),
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
3.0
:
VGS = 10V
ID = 500 mA
RDS(on)
DRANI-SOURCE ON-RESISTANCE
TJ. JUNCTION TEMPERATURE(oC)
246810
1.0
1.5
2.0
2.5
3.0
ID = 500 mA
:
ID = 50 mA
RDS(on),
DRANI-SOURCE ON-RESISTANCE
VGS. GATE-SOURCE VOLTAGE (V)
23456
0.0
0.2
0.4
0.6
0.8
1.0
VDS = 10V
75oC
125oC
150oC
25oC
TJ = -25oC
ID. DRAIN-SOURCE CURRENT(A)
VGS. GATE-SOURCE VOLTAGE (V)
-50 0 50 100 150
1.0
1.5
2.0
2.5
ID = 0.25 mA
ID = 1 mA
VGS = VDS
Vth, Gate-Source Threshold Voltage (V)
TJ. JUNCTION TEMPERATURE(oC)
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V / 2N7002VA Rev. 1.2 4
Typical Performance Characteristics (Continued)
Figure 7. Reverse Drain Current Variation with Diode
Forward Voltage and Temperature Figure 8. Power Derating
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
-55oC
VGS = 0 V
150oC
25oC
VSD, Body Diode Forward Voltage [V]
IS Reverse Drain Current, [mA]
0 25 50 75 100 125 150 175
0
50
100
150
200
250
300
PC[mW], POWER DISSIPATION
Ta[oC], AMBIENT TEMPERATURE
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V / 2N7002VA Rev. 1.2 5
Physical Dimensions
Figure 9. 6-LEAD, MO293, 1.2MM WIDE, SOT563F
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© Fairchild Semiconductor Corporation www.fairchildsemi.com
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