ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK(R) 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. Applications * Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications Features * * * * * EcoSPARK(R) devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Package Space saving D-Pak package availability SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Symbol JEDEC TO-263AB D-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak JEDEC TO-262AA E R2 C G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total TC = 25C 150 W Power Dissipation Derating TC > 25C 1.0 W/C Operating Junction Temperature Range -40 to 175 C Storage Junction Temperature Range -40 to 175 C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 C ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV TJ TSTG TL (c)2009 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 November 2009 Device Marking V3040D Device ISL9V3040D3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 V3040S V3040P ISL9V3040S3ST TO-263AB 330mm 24mm 800 ISL9V3040P3 TO-220AA Tube N/A 50 V3040S ISL9V3040S3 TO-262AA Tube N/A 50 V3040D ISL9V3040D3S TO-252AA Tube N/A 75 V3040S ISL9V3040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1K, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance 12 14 - V TC = 25C - - 25 A TC = 150C - - 1 mA VEC = 24V, See TC = 25C Fig. 11 TC = 150C - - 1 mA - - 40 mA - 70 - 10K - 26K On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25C, See Fig. 3 - 1.25 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.5V TC = 150C, See Fig. 4 - 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150C - 1.90 2.20 V - 17 - nC TC = 25C 1.3 - 2.2 V TC = 150C 0.75 - 1.8 V - 3.0 - V Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 0.7 4 s - 2.1 7 s VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 4.8 15 s - 2.8 15 s TJ = 25C, L = 3.0 mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 - - 300 mJ All packages - - 1.0 C/W Thermal Characteristics RJC Thermal Resistance Junction-Case (c)2009 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <430V 0 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 50 75 100 125 150 175 0 200 2 4 tCLP, TIME IN CLAMP (S) VGE = 3.7V VGE = 4.0V 1.26 1.22 VGE = 4.5V VGE = 5.0V VGE = 8.0V 1.14 -75 -50 -25 0 25 50 75 100 125 150 1.8 ICE = 10A 1.7 VGE = 3.7V VGE = 4.0V 1.6 1.5 1.4 VGE = 4.5V VGE = 5.0V 1.3 VGE = 8.0V 1.2 175 -75 -50 -25 0 TJ, JUNCTION TEMPERATURE (C) 50 75 100 125 150 175 Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 25 TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature 20 10 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.30 1.18 8 L, INDUCTANCE (mHy) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp ICE = 6A 6 10 5 TJ = - 40C 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 25C 0 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs Collector Current (c)2009 Fairchild Semiconductor Corporation 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs Collector Current ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 175C ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 0 25 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 20 15 TJ = 150C 10 TJ = 25C 5 TJ = -40C 0 0 1.0 2.0 3.0 4.0 1.0 2.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 2.5 Figure 7. Collector to Emitter On-State Voltage vs Collector Current 4.5 Figure 8. Transfer Characteristics 25 2.2 VCE = VGE VGE = 4.0V 20 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 4.0 3.5 VGE, GATE TO EMITTER VOLTAGE (V) 15 10 5 ICE = 1mA 2.0 1.8 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 -50 175 -25 0 TC, CASE TEMPERATURE (C) 25 50 100 75 125 150 175 TJ JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 12 10000 ICE = 6.5A, VGE = 5V, RG = 1K VECS = 24V SWITCHING TIME (S) LEAKAGE CURRENT (A) Resistive tOFF 10 1000 100 10 VCES = 300V Inductive tOFF 8 6 4 1 Resistive tON VCES = 250V 2 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature (c)2009 Fairchild Semiconductor Corporation 175 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 12. Switching Time vs Junction Temperature ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) 8 1600 IG(REF) = 1mA, RL = 1.25, TJ = 25C VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) FREQUENCY = 1 MHz 1200 CIES 800 CRES 400 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 0 5 10 15 20 0 25 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 12 16 20 24 28 32 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 430 BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 425 420 TJ = - 40C TJ = 175C 415 TJ = 25C 410 405 400 395 390 10 100 1000 2000 3000 RG, SERIES GATE RESISTANCE (k) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 PD 0.01 t2 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 10-1 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case (c)2009 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) L VCE R or L C PULSE GEN RG G LOAD C RG = 1K DUT G + DUT 5V E VCE E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK IAS VGE IAS VDD + RG G VDD DUT - E tP 0V IAS 0 0.01 tAV Figure 19. Energy Test Circuit (c)2009 Fairchild Semiconductor Corporation Figure 20. Energy Waveforms ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Test Circuit and Waveforms REV 7 March 2002 th JUNCTION ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.6e -3 6 RTHERM2 SABER Thermal Model SABER thermal model ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 } CTHERM1 RTHERM1 CTHERM2 5 CTHERM3 RTHERM3 4 CTHERM4 RTHERM4 3 CTHERM5 RTHERM5 2 CTHERM6 RTHERM6 tl (c)2009 Fairchild Semiconductor Corporation CASE ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 SPICE Thermal Model AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficientMaxTM EZSWITCHTM* TM* DEUXPEEDTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoostTM TinyBuckTM TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I43 (c) 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com