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Datasheet
SiC Power Module
BSM180D12P2C101
Application Circuit diagram
Motor drive
Inverter, Converter
Photovoltaics, wind power generation.
Induction heating equipment.
Features
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
Construction
This product is a half bridge module consisting of SiC-DMOS from ROHM.
Dimensions & Pin layout (Unit : mm)
*Do not connnect to NC pin.
1
3,4
2
10
9
8(N.C)
5
6
7(N.C)
5
6
7
8
9
10
1
2
4
3
(M2.6 FOR SELF-TAPPING
SCREW)
1/9 2017.10 - Rev.D
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Datasheet
BSM180D12P2C101
Absolute maximum rati ngs (Tj = 25°C)
Symbol Unit
V
DSS
G-S short V
D-S short V
D-S short V
V
GSSsurge
D-S short °C
I
D
DC(Tc=60°C) A
I
DRM
Pulse (Tc=60°C) 1ms　*
2
A
I
S
Tc=60°C V
GS
=18V A
A
A
Total power disspation *
4
Ptot Tc=25°C W
Tjmax °C
Tstg °C
Main Terminals : M6 screw N · m
N · m
(*1) Case temperature (T
c
) is defined on the surface of base plate just under the chips.
(*3) T
j
is less than 175°C
Example of acceptable VGS waveform
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T
jmax.
Vrms
4.5
3.5
Mounting torque
Isolation voltage
Mounting to heat shink : M5 screw
Conditions
Source current *
1
Storage temperature
V
GSS
Max Junction Temperature
Drain current *
1
Parameter
Drain-source voltage
Gate-source voltage()
Gate-source voltage()
I
SRM
Pulse (Tc=60°C) 1ms V
GS
=18V　*
2
Pulse (Tc=60°C) 10s V
GS
=0V　*
2
G - S Voltage (tsurge<300nsec
)
175
40 to150
40 to125
2500Visol Terminals to baseplate,
f=60Hz AC 1min.
360
204
1360
Limit
1200
22
6
204
360
10 to 26
22V
26V
0V
6V
10V
tsurge
tsurge
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Datasheet
BSM180D12P2C101
Electrical charact eri st i cs (Tj=25°C)
Symbol Min. Typ. Max. Unit
Tj=25°C －2.3 3.2
Tj=125°C －3.3 4.4
Tj=150°C －3.6 5
I
DSS
－-10A
Tj=25°C －5.4 －
Tj=125°C －5.1 －
Tj=150°C －4.8 －
Tj=25°C －2.3 －
Tj=125°C －3.3 －
Tj=150°C －3.5 －
V
GS(th)
1.6 2.7 4 V
－－
0.5
0.5 －－
td(on) －80 －
tr －90 －
trr －50 －
td(off) －300 －
tf －90 －
Ciss V
DS
=10V, V
GS
=0V, f=1MHz －23 －nF
Internal gate resistor R
Gint
Tj=25°C - 1.15 -
Ls －25 －nH
Terminal to heat sink －11.5 －mm
Terminal to terminal －19.0 －mm
Terminal to heat sink －9.5 －mm
Terminal to terminal - 13.0 - mm
(*4) In order to prevent self turn-on, it is recommended to apply negative gate bias.
(*5) Measurement of Tc is to be done at the point just under the chip.
(*6) Typical value is measured by using thermally
conductive grease of λ=0.9W/(m・K).
(*7) SiC devices have lower short cuicuit
withstand capability due to high current density.
Please be advised to pay careful attention
to short cuicuit accident and try to
adjust protection time to shutdown them
as short as possible.
(*8) If the Product is used beyond absolute maximum
ratings defined in the Specifications, as its internal
structure may be dameged, please replace
such Product with a new one.
°C/W
－－
0.11
Case-to-heat sink
Thermal resistance Rth(c-f) Case to heat sink, per 1 module,
Thermal grease appied *
6
- 0.035 -
Switching characteristics
V
GS(on)
=18V, V
GS(off)
=0V
V
DS
=600V
I
D
=180A
R
G
=5.6
inductive load
Input capacitance
Junction-to-case thermal
resistance Rth(j-c) DMOS (1/2 module) *
5
Creepage Distance
Clearance Distance
-
-
Stray Inductance
V
DS
=10V, I
D
=35.2mA
Gate-source leakage current I
GSS
V
GS
=22V, V
DS
=0V
V
GS
= 6V, V
DS
=0V A
ns
V
V
GS
=18V, I
S
=180A
Parameter Conditions
Static drain-source on-state
voltage V
DS(on)
I
C
=180A, V
GS
=18V V
Drain cutoff current V
DS
=1200V, V
GS
=0V
Source-drain voltage V
SD
V
GS
=0V, I
S
=180A
Gate-source threshold voltage
I
D
V
DS
10%
V
GS
10%
90%
10% 10%
90%
Eon=Id×Vds
2%
td(on) tr
2%
trr
90%
2%
2%
Eoff=Id×Vds
td(off) tf
Vsurge
＜Wavelength for Switching Test＞
3/9 2017.10 - Rev.D
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
　
Fig.1 Typical Output Characteristics
Drain Current : ID[A]
Drain-Source Voltage : VDS [V]
Fig.2 Drain-Source Voltage vs. Drain Current
Drain-Source Voltage : VDS [V]
Drain Current : ID[A]
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage
Drain-Source Voltage : VDS [V]
Gate-Source Voltage : VGS [V]
Fig.4 Ron vs Junction Temperature
Ron []
Junction Temperature : Tj [ºC]
0
60
120
180
240
300
360
02468
VGS =16V
VGS =18V
VGS =20V VGS =14V
VGS =12V
VGS =10V
0
1
2
3
4
5
6
7
8
0 60 120 180 240 300 360
VGS =18V
Tj=25ºC
Tj=125ºC
Tj=150ºC
0
1
2
3
4
5
6
7
8
10 15 20 25
ID=180A
Tj=25ºC
ID=120A
ID=80A
ID=40A
0
0.01
0.02
0.03
0.04
0 50 100 150 200 250
ID=180A
VGS=12V
VGS=14V
VGS=16V
VGS=18V
VGS=20V
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
0
60
120
180
240
300
360
0 5 10 15
VDS =20V
Tj=25ºC
Tj=125ºC
Tj=150ºC
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 5 10 15
Tj=25ºC
Tj=125ºC
VDS =20V
Tj=150ºC
Gate-Source Voltage : VGS [V]
Fig.5 Drain Current vs. Gate-Source Voltage
Drain Current : ID[A]
Fig.6 Drain Current vs. Gate-Source Voltage
Drain Current : ID[A]
Gate-Source Voltage : VGS [V]
1
10
100
1000
0246
Tj=125ºC
VGS =0V
VGS =18V
Tj=25ºC
Tj=25ºC
Tj=150ºC
Tj=125ºC
Tj=150ºC
0
60
120
180
240
300
360
0246
VGS =0V
VGS =18V
Tj=25ºC
Tj=125ºC
Tj=150ºC
Tj=25ºC
Tj=125ºC
Tj=150ºC
Gate-Source Voltage : VGS [V]
Fig.7 Drain Current vs. Gate-Source Voltage
Drain Current : ID[A]
Fig.8 Drain Current vs. Gate-Source Voltage
Gate-Source Voltage : VGS [V]
Drain Current : ID[A]
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
0
5
10
15
20
25
30
0 100 200 300 400
Eon
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
Eoff
Err
0
5
10
15
20
25
30
0 100 200 300 400
Eon
Eoff
Err
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
Fig.12 Switching Loss vs. Drain Current
[ Tj=125ºC ]
Fig.11 Switching Loss vs. Drain Current
[ Tj=25ºC ]
Switching Loss [mJ]
Drain Current : ID[A]
Switching Loss [mJ]
Drain Current : ID[A]
1
10
100
1000
0 100 200 300 400
td(off)
tr
td(on)
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
tf
1
10
100
1000
0 100 200 300 400
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
tf
td(off) tr
td(on)
Drain Current : ID[A]
Fig.9 Switching Characteristics [ Tj=25ºC ]
Switching Time : t [ns]
Fig.10 Switching Characteristics [ Tj=125ºC ]
Switching Time : t [ns]
Drain Current : ID[A]
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
10
100
1000
10000
110100
td(off)
td(on)
VDS =600V
ID=180A
VGS(on) =18V
VGS(off) =0V
Inductive Load
tf
tr
10
100
1000
10000
110100
VDS =600V
ID=180A
VGS(on) =18V
VGS(off) =0V
Inductive Load
td(off)
td(on)
tr
tf
Gate Resistance : RG[]Gate Resistance : RG[]
Fig.15 Switching Characteristics vs. Gate
Resistance [ Tj=25ºC ]
Switching Time : t [ns]
Fig.16 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
Switching Time : t [ns]
1
10
100
1000
1
10
100
1000
0 100 200 300 400
trr
Irr
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
1
10
100
1000
1
10
100
1000
0 100 200 300 400
trr
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG=5.6
Inductive Load
Irr
Recovery Current : Irr [A]
Fig.142 Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
Recovery Current : Irr [A]
Recovery Time : trr [ns]
Fig.13 Recovery Characteristics vs.
Drain Current [ Tj=25ºC ]
Drain Current : ID[A] Drain Current : ID[A]
Recovery Time : trr [ns]
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
0
5
10
15
20
25
0 500 1000 1500
ID=180A
Tj=25ºC
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
0.01 1 100
Tj=25ºC
VGS =0V
Coss
Ciss
Crss
Fig.19 Typical Capacitance vs. Drain-Source
Voltage
Capasitance : C [nF]
Drain-Source Voltage : VDS [V]
Fig.20 Gate Charge Characteristics
[ Tj=25ºC ]
Gate-Source Voltage : VGS [V]
Total Gate charge : Qg [nC]
0
2
4
6
8
10
12
14
16
18
20
110100
VDS =600V
ID=180A
VGS(on) =18V
VGS(off) =0V
Inductive Load
Eon Eoff
Err
0
2
4
6
8
10
12
14
16
18
20
110100
VDS =600V
ID=180A
VGS(on) =18V
VGS(off) =0V
Inductive Load
Eon Eoff
Err
Fig.17 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
Switching Loss [mJ]
Gate Resistance : RG[]
Fig.18 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
Switching Loss [mJ]
Gate Resistance : RG[]
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Datasheet
BSM180D12P2C101
Electrical charact eri st i c curves (Typical)
0.1
1
0.001 0.01 0.1 1 10
Single Pulse
Tc=25ºC
Per unit base : 0.11ºC/W
Time [s]
Fig.21 Normalized Transient Thermal
Impedance
Normalized Transient Thermal Impedance : Rth
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Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions.
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
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