SiC Power Module Datasheet BSM180D12P2C101 Application Circuit diagram Motor drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 1) Low surge, low switching loss. *Do not connnect to NC pin. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS from ROHM. Dimensions & Pin layout (Unit : mm) 3 10 9 8 7 6 5 4 1 2 (M2.6 FOR SELF-TAPPING SCREW) www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 1/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Absolute maximum ratings (Tj = 25C) Parameter Conditions Symbol VDSS G-S short Drain-source voltage Gate-source voltage() D-S short VGSS Gate-source voltage() D-S short G - S Voltage (tsurge<300nsec)VGSSsurge D-S short ID DC(Tc=60C) Drain current *1 IDRM Pulse (Tc=60C) 1ms *2 IS Tc=60C VGS=18V 1 Source current * Pulse (Tc=60C) 1ms VGS=18V * ISRM 4 Limit 1200 22 2 Pulse (Tc=60C) 10s VGS=0V * Total power disspation * Max Junction Temperature Storage temperature Ptot Tc=25C Tjmax Tstg Isolation voltage Visol Terminals to baseplate, f=60Hz AC 1min. 2 40 to150 40 to125 Unit V V V C A A A A A W C C 2500 Vrms 6 10 to 26 204 360 204 360 1360 175 4.5 Main Terminals : M6 screw N*m 3.5 Mounting to heat shink : M5 screw N*m (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. (*3) Tj is less than 175C Mounting torque Example of acceptable VGS waveform 26V tsurge 22V 0V tsurge 6V 10V www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 2/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristics (Tj=25C) Parameter Symbol Static drain-source on-state voltage Conditions VDS(on) IC=180A, VGS=18V IDSS Drain cutoff current VDS=1200V, VGS=0V VGS=0V, IS=180A VSD Source-drain voltage Tj=25C Tj=125C Tj=150C VGS=18V, IS=180A Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Gate-source threshold voltage VGS(th) VDS=10V, ID=35.2mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= 6V, VDS=0V td(on) tr trr td(off) tf Ciss RGint Switching characteristics Input capacitance Internal gate resistor Stray Inductance VGS(on)=18V, VGS(off)=0V VDS=600V ID=180A RG=5.6 inductive load VDS=10V, VGS=0V, f=1MHz Tj=25C Ls Creepage Distance - Clearance Distance - Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal Junction-to-case thermal resistance Rth(j-c) DMOS (1/2 module) *5 Case-to-heat sink Thermal resistance Rth(c-f) Min. 1.6 0.5 - Typ. 2.3 3.3 3.6 5.4 5.1 4.8 2.3 3.3 3.5 2.7 80 90 50 300 90 23 1.15 25 11.5 19.0 9.5 13.0 Max. 3.2 4.4 5 10 4 0.5 - 0.11 - 0.035 - Unit V A V V A ns nF nH mm mm mm mm C/W Case to heat sink, per 1 module, 6 Thermal grease appied * (*4) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*5) Measurement of Tc is to be done at the point just under the chip. (*6) Typical value is measured by using thermally conductive grease of =0.9W/(mK). (*7) SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. (*8) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one. www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 3/9 Wavelength for Switching Test Eon=IdxVds Eoff=IdxVds trr Vsurge VDS 90% ID 2% 90% 10% 10% 2% 2% 10% 2% 90% VGS 10% td(on) tr td(off) tf 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Fig.2 Drain-Source Voltage vs. Drain Current Fig.1 Typical Output Characteristics 360 8 Drain-Source Voltage : VDS [V] 300 Drain Current : ID [A] VGS =18V 240 VGS =18V 7 VGS =16V VGS =14V VGS =20V 180 VGS =12V 120 60 VGS =10V 0 6 Tj=125C 5 Tj=150C 4 3 Tj=25C 2 1 0 0 2 4 6 8 0 60 Drain-Source Voltage : VDS [V] 180 240 300 360 Drain Current : ID [A] Fig.3 Drain-Source Voltage vs. Gate-Source Voltage Fig.4 Ron vs Junction Temperature 8 0.04 Tj=25C 7 6 VGS=14V 0.03 VGS=12V 5 4 Ron [] Drain-Source Voltage : VDS [V] 120 ID=180A 3 ID=120A 2 VGS=16V VGS=18V VGS=20V 0.01 ID=80A 1 0.02 ID=40A 0 ID =180A 0 10 15 20 25 0 Gate-Source Voltage : VGS [V] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 50 100 150 200 250 Junction Temperature : Tj [C] 4/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Fig.5 Drain Current vs. Gate-Source Voltage Fig.6 Drain Current vs. Gate-Source Voltage 360 1000 Tj=25C Tj=150C 300 Drain Current : ID [A] Drain Current : ID [A] Tj=125C 100 Tj=150C 10 VGS =0V VGS =18V Tj=25C VGS =0V Tj=125C VGS =18V 1 0 2 4 Tj=25C 240 Tj=125C 180 Tj=150C 120 Tj=125C 0 0 6 Gate-Source Voltage : VGS [V] 2 4 6 Gate-Source Voltage : VGS [V] Fig.8 Drain Current vs. Gate-Source Voltage Fig.7 Drain Current vs. Gate-Source Voltage 360 1.E+03 VDS =20V Drain Current : ID [A] 240 VDS =20V 1.E+02 300 Drain Current : ID [A] Tj=150C Tj=25C 60 Tj=150C 180 Tj=125C 120 60 Tj=25C Tj=150C 1.E+01 Tj=125C 1.E+00 Tj=25C 1.E-01 1.E-02 1.E-03 0 1.E-04 0 5 10 15 0 10 15 Gate-Source Voltage : VGS [V] Gate-Source Voltage : VGS [V] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 5 5/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Fig.10 Switching Characteristics [ Tj=125C ] Fig.9 Switching Characteristics [ Tj=25C ] 1000 1000 tr td(off) tr td(off) 100 td(on) 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load Switching Time : t [ns] Switching Time : t [ns] tf 1 100 td(on) 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load 1 0 100 200 300 0 400 Drain Current : ID [A] 100 200 300 400 Drain Current : ID [A] Fig.11 Switching Loss vs. Drain Current [ Tj=25C ] Fig.12 Switching Loss vs. Drain Current [ Tj=125C ] 30 30 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load 20 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load 25 Switching Loss [mJ] 25 Switching Loss [mJ] tf Eon 15 Eoff 10 20 Eon 15 10 Eoff 5 5 Err Err 0 0 0 100 200 300 0 400 Drain Current : ID [A] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 100 200 300 400 Drain Current : ID [A] 6/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Fig.142 Recovery Characteristics vs. Drain Current [ Tj=125C ] 100 1000 100 trr Irr 10 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load 1000 Recovery Current : Irr [A] Recovery Time : trr [ns] Recovery Time : trr [ns] 1000 trr 100 0 100 200 300 100 Irr 10 1 1 1000 1 1 400 0 100 Drain Current : ID [A] 200 300 400 Drain Current : ID [A] Fig.15 Switching Characteristics vs. Gate Resistance [ Tj=25C ] Fig.16 Switching Characteristics vs. Gate Resistance [ Tj=125C ] 10000 10000 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load 1000 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load td(off) Switching Time : t [ns] Switching Time : t [ns] 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load Recovery Current : Irr [A] Fig.13 Recovery Characteristics vs. Drain Current [ Tj=25C ] tr 100 td(on) tf 1000 td(off) tf tr 100 td(on) 10 10 1 10 1 100 Gate Resistance : RG [] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 10 100 Gate Resistance : RG [] 7/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Fig.18 Switching Loss vs. Gate Resistance [ Tj=125C ] 20 20 18 18 16 16 14 14 12 Eoff Eon 10 Switching Loss [mJ] Switching Loss [mJ] Fig.17 Switching Loss vs. Gate Resistance [ Tj=25C ] 8 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load 6 4 2 Err 12 Eon 10 8 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load 6 4 Err 2 0 0 1 10 1 100 Gate Resistance : RG [] 10 100 Gate Resistance : RG [] Fig.19 Typical Capacitance vs. Drain-Source Voltage Fig.20 Gate Charge Characteristics [ Tj=25C ] 25 1.E-07 ID =180A Tj=25C 1.E-08 Coss 1.E-09 1.E-10 Crss Tj=25C VGS =0V 1.E-11 0.01 Gate-Source Voltage : VGS [V] Ciss Capasitance : C [nF] Eoff 20 15 10 5 0 1 100 0 Drain-Source Voltage : VDS [V] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 500 1000 1500 Total Gate charge : Qg [nC] 8/9 2017.10 - Rev.D Datasheet BSM180D12P2C101 Electrical characteristic curves (Typical) Normalized Transient Thermal Impedance : Rth Fig.21 Normalized Transient Thermal Impedance 1 Single Pulse Tc=25C Per unit base : 0.11C/W 0.1 0.001 0.01 0.1 1 10 Time [s] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 9/9 2017.10 - Rev.D Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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