To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Ren esas E lectronics assumes no liability whatsoever for any da mages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified acco rding to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, et c.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electro nic app liances; machine tool s; p ersonal electron ic equipment; and indu strial robots .
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equ i pment; submersible repeaters; nu clear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
interven tion (e.g. excision, et c.), and any oth er applications or purposes that pose a direct th reat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate an d malfunct ion s under certai n u se cond ition s. Further,
Renesas Electronics pr oducts are not subject to radiation resi stance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for det ai ls as to enviro nmental matters such as the en vi ronmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as us ed in this document means Renesas Electronics Corporation and also includes its majo ri ty-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 1 of 11
Preliminary
HAT3008R, HAT3008RJ
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1198-0500
Rev.5.00
Aug 25, 2009
Features
• For Automotive Application (at Type Code “J”)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
G
D
S
D
G
D
S
D
Nch Pch
1
2
78
4
56
3
1234
5
6
7
8
Absolute Maximum Ratings
(Ta = 25°C)
Value
Item Symbol
Nch Pch Unit
Drain to source voltage VDSS 60 –60 V
Gate to source voltage VGSS ±20 ±20 V
Drain current ID 5 –3.5 A
Drain peak current ID (pulse) Note 1 40 –28 A
Body-drain diode reverse drain current IDR 5 –3.5 A
HAT3008R — — — Avalanche current
HAT3008RJ
IAP Note 4
5 –3.5 A
HAT3008R — — — Avalanche energy
HAT3008RJ
EAR Note 4
2.14 1.05 mJ
Channel dissipation Pch Note 2 2 2 W
Channel dissipation Pch Note 3 3 3 W
Channel temperature Tch 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 2 of 11
Electrical Characteristics
N Channel
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
HAT3008R IDSS — — 1 μA
Zero gate voltage drain
current HAT3008RJ IDSS — — 0.1 μA
VDS = 60 V, VGS = 0
HAT3008R IDSS — — — μA
Zero gate voltage drain
current HAT3008RJ IDSS — — 10 μA
VDS = 48 V, VGS = 0
Ta = 125°C
Gate to source cutoff voltage VGS (off) 1.2 — 2.2 V VDS = 10 V, ID = 1 mA
RDS (on) — 0.043 0.058 Ω I
D = 3 A, VGS = 10 V Note 5 Static drain to source on state resistance
RDS (on) — 0.056 0.084 Ω I
D = 3 A, VGS = 4 V Note 5
Forward transfer admittance |yfs| 6 9 — S ID = 3 A, VDS = 10 V Note 5
Input capacitance Ciss — 520 — pF
Output capacitance Coss — 270 — pF
Reverse transfer capacitance Crss — 100 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 11 — ns
Rise time tr — 40 — ns
Turn-off delay time td (off) — 110 — ns
Fall time tf — 80 — ns
VGS = 10 V, ID = 3 A
VDD ≅ 30 V
Body-drain diode forward voltage VDF — 0.84 1.1 V IF = 5 A, VGS = 0 Note 5
Body-drain diode reverse recovery time trr — 40 — ns IF = 5 A, VGS = 0
diF/dt = 50 A/μs
Note: 5. Pulse test
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 3 of 11
P Channel
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
HAT3008R IDSS — — –1 μA
Zero gate voltage drain
current HAT3008RJ IDSS — — –0.1 μA
VDS = –60 V, VGS = 0
HAT3008R IDSS — — — μA
Zero gate voltage drain
current HAT3008RJ IDSS — — –10 μA
VDS = –48 V, VGS = 0
Ta = 125°C
Gate to source cutoff voltage VGS (off) –1.2 — –2.2 V VDS = –10 V, ID = –1 mA
RDS (on) — 0.12 0.15 Ω I
D = –2 A, VGS = –10 V Note 6 Static drain to source on state resistance
RDS (on) — 0.16 0.23 Ω I
D = –2 A, VGS = –4 V Note 6
Forward transfer admittance |yfs| 3 4.5 — S ID = –2 A, VDS = –10 V Note 6
Input capacitance Ciss — 600 — pF
Output capacitance Coss — 290 — pF
Reverse transfer capacitance Crss — 75 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 11 — ns
Rise time tr — 30 — ns
Turn-off delay time td (off) — 100 — ns
Fall time tf — 55 — ns
VGS = –10 V, ID = –2 A
VDD ≅ –30 V
Body-drain diode forward voltage VDF — –0.98 –1.28 V IF = –3.5 A, VGS = 0 Note 6
Body-drain diode reverse recovery time trr — 70 — ns IF = –3.5 A, VGS = 0
diF/dt = 50 A/μs
Note: 6. Pulse test
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 4 of 11
Main Characteristics
N Channel
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
4.0
0
1.0
2.0
3.0
0 50 100 150 200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
10
0
2
4
6
8
0246 810
2.5 V
3 V
3.5 V
V
GS
= 2 V
10
0
2
4
6
8
012345
Operation in
this area is
limited by R
DS (on)
Pulse Test V
DS
= 10 V
Pulse Test
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0
0.1
0.2
0.3
0.4
048121620
2 A
1 A
I
D
= 5 A
0.1 0.3 1 3 10 30 100
1.0
0.5
0.2
0.05
0.1
0.02
0.01
Pulse Test
–25°C
Tc = 75°C
2 Drive Operation
1 Drive Operation
10 V
10 V
V
GS
= 4 V
Pulse Test
Ta = 25°C
1 shot Pulse
PW = 10 ms (1 shot)
1 ms
100 μs
DC Operation (PW ≤ 10 s)
Note 7
10 μs
4 V
25°C
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 5 of 11
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.04
0.08
0.12
–40 0 40 80 120 160
0
ID = 5 A
1 A, 2 A, 5 A
10 V
VGS = 4 V
0.1 0.2 0.5 1 2 5 10
50
20
5
10
2
0.5
1
Pulse Test
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
0.1 0.2 0.5 1 2 5 10
500
200
100
20
50
10
5
01020304050
2000
1000
500
200
100
50
20
10
100
0
20
40
60
80
0
20
816243240
0
4
8
12
16
VGS
VDS
ID = 5 A
VDD = 10 V
25 V
50 V
VDD = 50 V
25 V
10 V
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1 A, 2 A
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
100
300
10
3
0.1 0.2 1 1020.5
1000
30
5
1
25°C
Tc = –25°C
75°C
VDS = 10 V
Pulse Test
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
tr
td(on)
td(off)
tf
VGS = 10 V, VDD = 30 V
PW = 5 μs, duty ≤ 1 %
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 6 of 11
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= 5 A
V
DD
= 25 V
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
10
0
2
4
6
8
0 0.4 0.8 1.2 1.6 2.0
Pulse Test
5 V
V
GS
= 0, –5 V
10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50 Ω
Vin
15 V
L
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V 50 Ω
R
L
Vout
Monitor
V
DD
= 30 V
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 7 of 11
P Channel
4.0
1.0
0
2.0
3.0
0
Channel Dissipation Pch (W)
50 100 150 200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
–0.1
–100
–10
–1
–0.1
–0.01
–0.3 –1 –3 –10 –30 –100
–30
–3
–0.3
–0.03
Operation in
this area is
limited by R
DS (on)
Ta = 25°C
1 shot pulse
–10
–8
–6
0
–2
–4
0
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
–3 V
Pulse Test
–3.5 V
–2 –4 –6 –8 –10
–10
0
–2
–4
–6
–8
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
–1 –2 –3 –4 –5
Tc = 75°C
–25°C
25°C
V
DS
= 10 V
Pulse Test
Note 8:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
–4 –8 –12 –16 –20
Pulse Test
I
D
= –2 A
–1 A
–0.5 A
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.02
0.05
0.01 –100–0.1 –0.3 –1 –3 –10 –30
100 μs
Note 8
1 ms
PW = 10 ms
DC Operation (PW ≤ 10 s)
V
GS
= –2.5 V
–10 V
–5 V
10 μs
2 Drive Operation
1 Drive Operation
–10 V
V
GS
= –4 V
Pulse Test
–4 V
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 8 of 11
0.5
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–10 V
–1 A
–0.5 A
V
GS
= –4 V
–2 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
20
10
2
5
1
0.2
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –5 –10
500
200
100
20
50
10
5
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
20
50
10
0
0
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
816243240
V
DS
V
GS
I
D
= –3.5 A
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
di / dt = 50 A / μs
V
GS
= 0, Ta = 25°C
–0.5 A, –1 A
I
D
= –2 A
Ciss
Coss
Crss
1000
300
100
10
30
3
1–0.2 –0.5 –1 –2 –5 –10
–0.1
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
tf
trtd(on)
td(off)
V
GS
= 0
f = 1 MHz
V
GS
= –10 V, V
DD
= –30 V
PW = 5 μs, duty ≤ 1 %
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 9 of 11
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = –3.5 A
VDD = –25 V
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
–10
0
–2
–4
–6
–8
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
5 V
VGS = 0, 5 V
10 V
Avalanche Test Circuit Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50 Ω
Vin
–
15 V
L
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50 Ω
VDD
= –30 V
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 10 of 11
Common
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10 μ100 μ1 m10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10 μ100 μ1 m10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
HAT3008R, HAT3008RJ Preliminary
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 11 of 11
Package Dimensions
P-SOP8-3.95 × 4.9-1.27 0.085g
MASS[Typ.]
FP-8DAVPRSP0008DD-D
RENESAS CodeJEITA Package Code Previous Code
A
85
14
F
bp
c
Detail F
Terminal cross section
1.27
1.08
0.40
L
1
0.60
0.25
x
0.460.400.34
0.10
b
p
b
1
c
1
0.250.200.15
MaxNomMin
Dimension in Millimeters
Symbol
Reference
5.3
4.90
D
3.95
E
0.14
A
2
6.206.105.80
0.25
1.75
A
0.75
Z
L
8°0°
c
1.27
e
0.1
y
H
E
A
1
D
*
1
*
2
E
H
E
*
3
xM
bp
e
Z
(Ni/Pd/Au plating) 2.
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Index mark
A
1
L1
L
Detail F
y
Package Name
SOP-8
Ordering Information
Part Name Quantity Shipping Container
HAT3008R-EL-E 2500 pcs Taping
HAT3008RJ-EL-E 2500 pcs Taping
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2377-3473
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2
