BAS 125W
Oct-19-19991
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
1
3
VSO05561
2
BAS 125-05W BAS 125-06WBAS 125W BAS 125-04W
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
13
EHA07002
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAS 125W
BAS 125-04W
BAS 125-05W
BAS 125-06W
13s
14s
15s
16s
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT-323
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage 25 VVR
mA100IF
Forward current
Surge forward current (t< 100µs) IFSM 500
Total power dissipation BAS 125W, TS = 93 °C Pto
t
250 mW
BAS 125-04W, -05W, -06W , TS = 84 °C Pto
t
250
Junction temperature 150 °CTj
Top -55 ... 150Operating temperature range
Storage temperature Tstg -55 ... 150
Thermal Resistance
Junction - ambient 1) BAS 125W RthJA ≤ 310 K/W
Junction - ambient 1) BAS 125-04W ... RthJA ≤ 425
Junction - soldering point BAS 125W RthJS ≤ 230
Junction - soldering point BAS 125-04W ... RthJS ≤ 265
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
BAS 125W
Oct-19-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
max.min. typ.
DC characteristics
nA
-
-
Reverse current
VR = 20 V
VR = 25 V
IR
-
-
100
150
mVForward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
VF
-
-
-
385
530
800
400
650
950
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT- 1.1 pF-
Ω
Differential forward resistance
IF = 5 mA, f = 10 kHz
Rf- 16 -
BAS 125W
Oct-19-19993
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
BAS 125W
0 20 40 60 80 100 120 °C 150
TA,TS
0
10
20
30
40
50
60
70
80
mA
100
I
F
TS
TA
Permissible Pulse Load RthJS = f (tp)
BAS 125W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f (tp)
BAS 125W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAS 125W
Oct-19-19994
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
BAS 125-04W ... (IF per diode)
0 20 40 60 80 100 120 °C 150
TA,TS
0
10
20
30
40
50
60
70
80
mA
100
I
F
TS
TA
Permissible Pulse Load RthJS = f (tp)
BAS 125-04W ...
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f (tp)
BAS 125-04W ...
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAS 125W
Oct-19-19995
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHD07117BAS 125...
C
T
R
V
0.4
pF
1.0
10 V 20
0.6
0.2
0.8
Forward current IF = f (VF)
TA = Parameter
0.0
10
EHD07115BAS 125...
Ι
F
F
V
-2
-1
10
0
10
1
10
10
2
mA
-40C
T
A
=
C25
150 C
C85
1.0
0.5 V
Differential forward resistance rf = f (IF)
f = 10 kHz
10
EHD07118BAS 125...
rf
F
Ι
-2 2
10mA
0
10
Ω
10 4
10 1
10 2
10 3
-1
10 0
10 1
10
Reverse current IR = f (VR)
TA = Parameter
0
10
EHD07116BAS 125...
Ι
R
R
V
-3
-2
10
-1
10
0
10
10
1
A
2010 V
µT
A
= 125 C
C
= 85
A
T
T
A
= 25 C
