BSS138DW
Document number: DS30203 Rev. 14 - 2
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www.diodes.com
October 2019
© Diodes Incorporated
BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TA = +25°C
50V
3.5Ω @ VGS = 10V
200mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q101) for High Reliability.
https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate
Datasheet (BSS138DWQ)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
BSS138DW-7-F
SOT-363
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
Code
S
T
U
V
W
X
Y
Z
A
B
C
D
E
F
G
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT-363
TOP VIEW
S1
D1
D2
S2
G1
G2
TOP VIEW
Internal Schematic
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
K38
K38
YM
YM
YMK38
K38 YM
K38
K38
YM
YM
YM
K38
K38 YM
BSS138DW
Document number: DS30203 Rev. 14 - 2
2 of 6
www.diodes.com
October 2019
© Diodes Incorporated
BSS138DW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BSS138DW
Units
Drain-Source Voltage
VDSS
50
V
Drain-Gate Voltage (Note 7)
VDGR
50
V
Gate-Source Voltage Continuous
VGSS
20
V
Drain Current (Note 5) Continuous
ID
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BSS138DW
Units
Total Power Dissipation (Note 5)
PD
200
mW
Thermal Resistance, Junction to Ambient
RθJA
625
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
50
75
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.5
1.2
1.5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
1.4
3.5
VGS = 10V, ID = 0.22A
Forward Transconductance
gFS
100
mS
VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
50
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
8.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
20
ns
VDD = 30V, ID = 0.2A,
RGEN = 50
Turn-Off Delay Time
tD(OFF)
20
ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found
on our website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. RGS 20K.
BSS138DW
Document number: DS30203 Rev. 14 - 2
3 of 6
www.diodes.com
October 2019
© Diodes Incorporated
BSS138DW
0
0.1
0.2
0.3
0.4
0.5
0.6
1
03
254 7
6 8 910
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j°V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0 1 1.50.5 2 3.5 4 4.52.5 3
I , DRAIN-SOURCE CURRENT (A)
D
-55 C°
150 C°
25 C°
V = 1V
DS
0.65
T, JUNCTION TEMPERATURE (
)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 -25 50 10075
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
T, JUNCTION TEMPERATURE (
)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
125
250150
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.16
0.14
0.120.1
150 C°
-55 C°
25 C°
V = 2.5V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C°
-55 C°
25 C°
V = 2.75V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
(C)
(C)
BSS138DW
Document number: DS30203 Rev. 14 - 2
4 of 6
www.diodes.com
October 2019
© Diodes Incorporated
BSS138DW
0
1
2
3
4
5
6
0 0.5
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
150 C°
-55 C°
25 C°
V = 4.5V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.5
1
1.5
2
2.5
3
3.5
00.5
I , DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
D
150 C°
-55 C°
25 C°
V = 10V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DIODE CURRENT (A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
00.2 0.4 0.6 0.8 1 1.2
150 C°
-55 C°
25 C°
C, CAPACITANCE (pF)
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
DS
0510 15 20 25 30
V = 0V
f = 1MHz
GS
Crss
Coss
Ciss
BSS138DW
Document number: DS30203 Rev. 14 - 2
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October 2019
© Diodes Incorporated
BSS138DW
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Dim
Min
Max
Typ
A
0.10
0.30
0.25
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65 Typ
F
0.40
0.45
0.425
H
1.80
2.20
2.15
J
0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.22
0.11

-
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS138DW
Document number: DS30203 Rev. 14 - 2
6 of 6
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October 2019
© Diodes Incorporated
BSS138DW
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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www.diodes.com