fiAMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS .. designed for use in high-voltage high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters, DC -DC and conveter FEATURES: *Collector-Emitter Sustaining Voitage- Veex = 350 V to 450 V * Coliector-Emitter Saturation Voltage - Vogysan = 2-0 V (Max.) @ i, =5.0A, 1, = 10A * switching Time - t, =0.5 us (Max.) @ |, =5.0A MAXIMUM RATINGS NPN 2N6738 2N6739 2N6740 8.0 AMPERE SILICON POWER TRANASISTORS 300-400 VOLTS 100 WATTS YY Characteristic Symbol | 2N6738 | 2N6739 | 2N6740 | Unit Collector-Emitter Voltage V,-=-1.5V | Vcey 450 550 650 Vv Collector-Emitter Voltage Vz.=-1.5V | Veex 350 400 450 Vv Collector-Emitter Voltage Veeo 300 350 400 Vv Emitter-Base Voltage VeBo 8.0 Collector Current - Continuous le 8.0 A ~ Peak lon 10 Base current lp 4.0 A Total Power Dissipation @T, = 25C Pp 100 Ww Derate above 25C 0.8 wrc Operating and Storage Junction Ty Tst Temperature Range -65 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R jc 4.25 Cw FIGURE -1 POWER DERATING 100 80 40 20 Py , POWER DISSIPATION(WATTS) 0 25 50 75 100 125 150 To, TEMPERATURE(C) TO-220 pale 8 J +! Le tr Wy M i PO F ie 41 123 : E 6 f an a noe | fe PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 75.31 B 9.78 10.42 Cc 5.01 6.52 D 13.06 1462 E 3.57 4.07 F 2.42 3.66 G 112 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 Oo 3.70 3.902N6738,2N6739,2N6740 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Voltage Vceo(sus) Vv ( p= 200 mA, I,= 0 ) 2N6738 300 2N6739 350 2N6740 400 Collector Cutoff Current logy mA ( Vegy= Rated Value, Vago =-1-5 V ) 0.1 ( Vegy= Rated Value, Vagiom=-t 5V,T,=100 C) 1.0 Emitter Cutoff Current lego mA ( Veg= 8.0 V,I,= 0) 2.0 ON CHARACTERISTICS (1) DC Current Gain (p= 5.0 A, Veg= 3.0 V ) hFE 10 40 Collector-Emitter Saturation Voltage VeEisat) V (1,= 5.0 A, Ip= 1.0A) 1.0 (lg= 8.0 A, I,= 4.04) 2.0 Base-Emitter Saturation Voltage Vpe(sat) Vv (1,= 5.0 A, Ip= 1.0A) 1.6 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) f, MHz (I, = 200 mA, Vog = 10 V ,f = 1.0 MHz) 10 60 SWITCHING CHARACTERISTICS Delay Time Voce = 125 V, Ip =5.0A ty 0.1 us Rise Time lay = <I: =1-0A t, 0.4 us 2.5 Storage Time t, = 20 us,Duty Cycle <1.0% ts us Fall Time ty 0.5 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= | Pee] fe2N6738, 2N6739, 2N6740 NPN lc , COLLECTOR CURRENT (Amp) V VOLTAGE (VOLTS) t, TIME (us) FIG-2 ACTIVE REGION SAFE OPERATING AREA 20 10 100 us i0us 5.0ms | 1.0ms 5.0 2.0 1.0 0.5 2 4 BNR - Bondng Wire Limit Second Breakdown ~ Thermally Livited at T .=25C (Single Puse) o 2 a 2N6739 2N6740 8 o = 7 610 20 30 50 70 100 200 300 400 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) FIG-3 "ON" VOLTAGES Vee(sat) Qicha*5 Vee@ Vce=3.0V Vee(sat) @ lo/a=5 0.1 02 0.5 1.0 2.0 5.0 10 Ie , COLLECTOR CURRENT (AMP) FIG-S TURN-ON TIME 3.0 2.0 1.0 0.7 0.5 03 0.2 0.1 0.07 0.05 0.03 0.02 005 80.1 02 05 1.0 2.0 Ic , COLLECTOR CURRENT (AMP) 5.0 10 hee , OC CURRENT GAIN t, TIME (us) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed fer reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-2 is base on T,=25 C; Typ is variable depending on power jevel.second breakdown pulse limi -ts are valid for duty cycles to 10% provided T, 225C, At high case temperatures,thermal limitation will reduce the power that can be handled to values less than the limita-tions imposed by second breakdown. lo-Vece FIG-4 DC CURRENT GAIN Ty=125C 25C 0.1 02 03 1 2 5 7 ic , COLLECTOR CURRENT (AMP) FIG-6 TURN-OFF TIME Vec#125 V,bofig#5.0 tar Iga, Y=2C 0.02 005 = 0.4 0.2 05 4.0 2.0 5.0 10 lc , COLLECTOR CURRENT (AMP)