SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* For AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE BCP68
PARTMARKING DETAIL BCP69
BCP69 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -25 V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -20 V IC=- 30mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-10µA
Collector Cut-Off
Current
ICBO -100
-10
nA
µA
VCB
=-25V
VCB
=-25V, Tamb
=150°C
Emitter Cut-Off Current IEBO -10 µAVEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.5 V IC=-1A, IB=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on) - 0.6
-1.0
V
V
IC=-5A, VCE
=-10V*
IC=-1A, VCE
=-1V*
Static Forward Current
Transfer Ratio
hFE
BCP69
BCP69-25
50
63
160 250
400
400
IC=-5mA, VCE
=-10V*
IC=-500mA, VCE=-1V*
IC=-500mA, VCE=-1V*
Transition Frequency fT100 MHz IC=-100mA, VCE=-5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
BCP69
C
C
E
B
3 - 20
