T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 1 of 5
1N58 02U S , 1N58 0 4U S, 1N58 0 6US and URS
Available on
commercial
versions
VOIDLESS HERM E TICALLY SEALED ULTRAFAST
RECOVERY GLASS REC TIFIERS
Qualified per MIL-PRF-19500/477
Quali f i ed Lev els:
JAN, J AN TX,
JANTX V an d JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recogni z ed 2. 5 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded p ackage c onfi gurat ions. Mi c r osem i al so offer s numerou s ot her
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“A” or D-5A
Package (US)
“A” Package
(URS)
Also available in:
“A” Package
(axial-leaded)
1N580 2, 04 and 06
Important: For the latest information, vi sit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equival ent of1N5802, 1N5804, 1N5806 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are avai lable per MIL-PRF-19500/477.
• RoHS compliant versions available (commercial grade only).
APPLIC ATIONS / BENEFITS
• Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
• Switching power supplies or other applications requi ring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resis tance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ T
A
= 25oC unless otherw ise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-End Cap
(see Figure 1)
RӨJEC 13
o
C/W
Worki ng Peak Reverse V oltage: 1N5802US & URS
1N5804US & URS
1N5806US & URS
VRWM 50
100
150
V
Forward Surge Current (3)
IFSM
35
A
Average Rectified Output Current
@ TEC = +75
o
C
(1)
IO1 2.5 A
Average Rectified Output-Current
@ TA = +55
o
C
(2)
IO2 1.0 A
Capacitance
@ VR = 10 V, f = 1 MHz; Vsi g = 50 mV (p-p)
C 25 pF
Reve rse Recovery Time (4)
trr
25
ns
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. IO1 is rated at 2.5 A @ TEC = 75 oC. Derate at 50 mA/oC for TEC above 125 oC.
2. IO2 is rated at 1.0 A @ TA = 55 oC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled (RӨJX < 154 oC/W) wher e TJ(max) 175 oC is not exceeded. Derate at 8.33
mA/oC for TA above 55 oC.
3. TA = 25 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A.
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 2 of 5
1N58 02U S , 1N58 0 4U S, 1N58 0 6US and URS
• CASE: Hermeti cally sealed voidless hard glass with tung sten slug s.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
• MARKING: Body painted and part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
• WEIGHT: 193 milligrams.
• See Package Dimensions on last page.
JAN 1N5802 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JA NTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount package type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
SYMBOLS & DEFINIT IONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Worki ng Peak Reverse V oltage: The m aximum peak voltage that can be applied over the operating temperature
range.
IO
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz s ine-wave input and
a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maxim um forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reve rse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward di rection to the reverse direction and a s pecified recover y decay point after a peak reverse current occurs.
BREAKDOWN
VOLTAGE
(MIN.)
@ 100 µA
V(BR)
MAXIMUM FORWARD
VOLTAGE
@ 8.3 ms pulse
VFM
REVERSE
CURRENT
(MAX.)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(Note 1)
REVERSE
RECOVERY
TIME (MAX)
trr
(Note 2)
THERMAL
IMPEDANCE
@ tH = 10 ms
ZӨJX
(Note 3)
TYPE
Volts
Volts
µA
Amps ns oC/W
I
F
= 1.0 A
I
F
= 2.5 A
25 oC
125 oC
1N5802US & URS
60
0.875
0.975
1
175
35
25
4.0
1N5804US & URS
110
0.875
0.975
1
175
35
25
4.0
1N5806US & URS
160
0.875
0.975
1
175
35
25
4.0
NOTES: 1. TA = 2.5 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals (IFSM s urg e is als o a ma xim um rati ng) .
2. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A (trr reverse recovery time i s also a maxim um rating) .
3. For th e complete thermal impedance curve over a broad range of heating times, see Figure 1.
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 3 of 5
1N58 02U S , 1N58 0 4U S, 1N58 0 6US and URS
Heating Time (sec)
FIGURE 1
Max i mum Th er mal Imped anc e
IO (A)
FIGURE 2
Rectifier Power Versus IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 4 of 5
1N58 02U S , 1N58 0 4U S, 1N58 0 6US and URS
P ad Area (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
VF (V)
FIGURE 4
Forward Voltage vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 5 of 5
1N58 02U S , 1N58 0 4U S, 1N58 0 6US and URS
NOTES:
1. Dimensions are in inc hes.
2. Millimeters are given for general information only.
3. Di mens ions ar e pr e-solder dip.
4. Minimum clearance of glass body to mounting surface on all
orientations.
5. Cathode marking to be either i n color band, three dots spaced equally
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
on the face of the end tab shall not lie within .020 inc h (0.51 mm) of
the mounting surface.
7. In accordance with A SME Y14.5M, diameters are equi valent to Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap shall be
round.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.091
.103
2.31
2.62
8
BL
.168
.200
4.27
5.08
ECT
.019
.028
0.48
0.71
8
S
.003
0.08
NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional
spot for cement.
DIM
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94