RMB2S
THRU
RMB4S
1/2 Amp Fast Recovery
Glass Passivated
Bridge Rectifier
200 to 400 Volts
Features
Surface Mount Package
Glass Passivated Diode Construction
Moisture Resistant Epoxy Case
Fast Recovery, Low Switching Loss
Maximum Ratings
Operating Temperature: -55to +150
Storage Temperature: -55to +150
MCC
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
RMB2S RB2S 100V 70V 100V
RMB4S RB4S 200V 140V 200V
Electrical Characteristics @ 25 Unless Otherwise Specified
Average Forward
Current IF(AV) 0.5A(1)
0.8A(2) TA=30
Peak Forward Surge
Current IFSM 30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage VF1.25V IFM =0.4A;
TA=25
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR5.0µA
100µATA=25
TA= 125
Typical Thermal
Resistance Per Leg
RθJA
RθJA
RθJL
85/W(1)
70/W(2)
20/W(1)
PC board with
12mm2copper pads
Typical Junction
Capacitance CJ13pF Measured at
1.0MHz, VR=4.0V
Maximum Reverse
Recovery Time trr 150ns IF=0.5A, IR=1.0A,
Irr=0.25A
Rating For Fusing I2t5.0A
2st<8.30ms
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05”(1.3 x 1.3mm)
pads
(2) On aluminum substrate P.C.B. with an area of 0.8” x 0.8”(20 x
20mm) mounted on 0.05 x 0.05”(1.3x 1.3mm) solder pad
MBS-1
Notch in case
B
C
D
A
F
G
H
E
+
-
L
K
JM
N

INCHES MM

.252 .272 6.40 6.91



.017 .029 0.45 0.75
.090 .106 2.30 2.70
.004 .008 0.10 0.20
.021 .023 0.53 0.58
.058 .062 1.47 1.57
K .195 .205 4.95 5.21
N .008 .014 0.15 0.35
L .110 .114 2.80 2.90
M .039 .049 0.99 1.24
www.mccsemi .com
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3 2003/04/30
www.mccsemi .com
110 100
0
5.0
10
15
20
25
30
35
020 40 60 80 100
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.01
0.1
1
10
0.1 110 100
0
5.0
10
15
20
25
30
200
020 40 60 80 100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles
Fig. 1 – Maximum Forward Current
Derating Curve
Average Forward Rectified Current (A)
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 3 – Typical Instantaneous
Forward Characteristics Fig. 4 – Typical Reverse Leakage
Characteristics Per Leg
Instantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
Resistive or Inductive Load
Aluminum Substrate
Glass Epoxy P.C.B.
TA = 40°C
Single Half Sine-Wave
(JEDEC Method)
Pulse Width = 300 s
1% Duty Cycle
Instantaneous Forward Current (A)
TJ = 125°C
TJ = 25°C
Reverse Voltage (V)
Junction Capacitance (pF)
Fig. 5 – Typical Junction Capacitance
1.0 Cycle
f = 60Hz
f = 50Hz
TJ = 150°C
TJ = 25°C
TJ = 25°C
f = 1.0 MHz
Vsig = 50mVp-p
MCC
RMB2S thru RMB4S
Revision: 3 2003/04/30