CLL4150 HIGH SPEED SWITCHING DIODE & SOD-80 CASE MAXIMUM RATINGS (T,=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Central . DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, ina hermetically sealed glass surface mount package, designed for high speed switching applications. Marking Code: Cathode Band. SYMBOL VR 50 VRRM 50 IF 300 lFRM 600 lFSM 4000 IFSM 1000 Pp 500 Ty T stg -65 to +200 OjA 350 ELECTRICAL CHARACTERISTICS (T,a=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN BVR IR=5.0pA 75 Ir VpR=50V VE ip=1.0mMA 0.54 VE IF=10mA 0.66 VE Ip=50mA 0.76 VE |F=100mA 0.82 VE lF=200mA 0.87 Cr Vr=0, f=1 MHz ter IR=lp=10mA, RL =100Q, Rec. to 1.0mA 140 MAX 100 0.62 0.74 0.86 0.92 1.0 4.0 4.0 UNITS mA mA mA mA mw C C/W UNITS n << << <> pm i ] oon All dimensions in inches (mm). -130(3.30) .016(0.41) .051(1. cafe | 1 @ wert 70) t.oo4(o.10) 10) MAX 1MUM eT te SHEET R2 141