MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. SC-70/SOT-323 CASE 419 STYLE 3 Features * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel - Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM 6x MG G 1 6x M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 March, 2012 - Rev. 12 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25C Max PD Unit 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) Derate above 25C mW C/W Thermal Resistance, Junction-to-Ambient RqJA 618 (Note 1) 403 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 280 (Note 1) 332 (Note 2) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MUN5111T1G, SMUN5111T1G SC-70/SOT-323 (Pb-Free) 6A 10 10 3,000/Tape & Reel MUN5112T1G, SMUN5112T1G SC-70/SOT-323 (Pb-Free) 6B 22 22 3,000/Tape & Reel MUN5113T1G, SMUN5113T1G SC-70/SOT-323 (Pb-Free) 6C 47 47 3,000/Tape & Reel MUN5113T3G SC-70/SOT-323 (Pb-Free) 6C 47 47 10,000/Tape & Reel MUN5113T1G SC-70/SOT-323 (Pb-Free) 6C 47 47 3,000/Tape & Reel MUN5114T1G, SMUN5114T1G SC-70/SOT-323 (Pb-Free) 6D 10 47 3,000/Tape & Reel MUN5115T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6E 10 3,000/Tape & Reel MUN5116T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6F 4.7 3,000/Tape & Reel MUN5130T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6G 1.0 1.0 3,000/Tape & Reel MUN5131T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6H 2.2 2.2 3,000/Tape & Reel MUN5132T1G, NSVMUN5132T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6J 4.7 4.7 3,000/Tape & Reel MUN5133T1G, SMUN5133T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6K 4.7 47 3,000/Tape & Reel MUN5134T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6L 22 47 3,000/Tape & Reel MUN5135T1G (Note 3) SC-70/SOT-323 (Pb-Free) 6M 2.2 47 3,000/Tape & Reel MUN5136T1G SC-70/SOT-323 (Pb-Free) 6N 100 100 3,000/Tape & Reel MUN5137T1G SC-70/SOT-323 (Pb-Free) 6P 47 22 3,000/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 IEBO Characteristic OFF CHARACTERISTICS mAdc - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 - - - - - - - - - - - - - - ON CHARACTERISTICS (Note 4) hFE DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/MUN5132T1/NSVMUN5132T1/ MUN5133T1/SMUN5133T1/MUN5134T1 VCE(sat) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN5113T1 (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN5136T1 (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN5137T1 Vdc - - 0.25 - - 0.25 VOL 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - 0.2 - - 0.2 - - 0.2 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 Min Typ VOH Input Resistor MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 R1 Resistor Ratio MUN5111T1/SMUN5111T1/MUN5112T1/SMUN5112T1/ MUN5113T1/SMUN5113T1/MUN5136T1 MUN5114T1/SMUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1/NSVMUN5132T1 MUN5133T1/SMUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 4.9 - - 4.9 4.9 4.9 4.9 - - - - - - - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 1.0 1.2 0.17 - 0.8 0.055 0.38 0.038 1.7 0.21 - 1.0 0.1 0.47 0.047 2.1 0.25 - 1.2 0.185 0.56 0.056 2.6 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 4 Unit Vdc 250 50 Max 150 kW MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5111T1G, SMUN5111T1G IC/IB = 10 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 -25C IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance TA=-25C 10 1 0.1 0.01 0.001 50 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 100 0.1 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 10 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 10 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5112T1G, SMUN5112T1G IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 VCE = 10 V TA=75C 25C -25C 100 10 0 40 20 IC, COLLECTOR CURRENT (mA) 10 1 50 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz lE = 0 V TA = 25C TA=-25C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 9 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 10 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 1 1000 IC/IB = 10 TA=-25C hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5113T1G, SMUN5113T1G 25C 75C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5114T1G, SMUN5114T1G TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75C f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25C -25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25C TA=-25C 75C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5132T1G, NSVMUN5132T1G 1000 75C 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25C -25C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75C 100 25C 10 1 35 -25C 0 20 Figure 23. Maximum Collector Voltage versus Collector Current 100 IC, COLLECTOR CURRENT (mA) 9 8 7 6 5 4 3 2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C -25C 10 25C 1 0.1 0.01 60 0 1 2 3 4 -25C 75C 25C 0.1 0 5 10 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 120 Figure 24. DC Current Gain 10 1 0 40 60 80 100 IC, COLLECTOR CURRENT (mA) 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 50 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5133T1G, SMUN5133T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 TA = -25C 0.01 0.001 50 Figure 30. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 29. DC Current Gain 8 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 32. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5135T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 35. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 36. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 8 0 100 Figure 34. DC Current Gain 12 10 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 37. Input Voltage versus Output Current http://onsemi.com 11 50 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 0.01 75C 25C -25C IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136T1G 1000 75C TA = -25C 100 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 38. Maximum Collector Voltage versus Collector Current 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 41. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25C 75C 10 0.1 60 Figure 40. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 39. DC Current Gain 1.2 0 25C 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 42. Input Voltage versus Output Current http://onsemi.com 12 20 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137T1G 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 43. Maximum Collector Voltage versus Collector Current Figure 44. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) 1.2 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C TA = -25C 10 25C 1 0.1 0.01 0.001 60 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 46. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 45. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 f = 1 MHz IE = 0 V TA = 25C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 47. Input Voltage versus Output Current http://onsemi.com 13 MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 14 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN5111T1/D