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Datasheet
RGW60TS65D
650V 30A Field Stop Trench IGBT
*1 Pulse width limited by T
jmax
.
A
T
C
= 25°C
T
C
= 100°C
Collector Current
Diode Pulsed Forward Current I
FP
*1
120 A
I
C
60 A
I
C
30
I
F
40 A
Features Inner Circui t
Outline
V
CES
650V
TO-247N
I
C (100℃)
30A
V
CE(sat) (Typ.)
1.5V
P
D
178W
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
Packaging Specifi cationsApplications
Type
Packaging TubePFC
Reel Size (mm) -UPS
Tape Width (mm) -Welding
Basic Ordering Unit (pcs) 450Solar Inverter
Packing Code C11
Marking
RGW60TS65D
IH
Absolute Maxi mum Rat i ngs (at T
C
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Collector - Emitter Voltage V
CES
650 V
Gate - Emitter Voltage V
GES
30 V
Power Dissipation
T
C
= 25°C P
D
178 W
T
C
= 100°C P
D
89 W
Storage Temperature T
stg
55 to +175 °C
Operating Junction Temperature T
j
40 to +175 °C
Pulsed Collector Current I
CP
*1
120 A
Diode Forward Current
T
C
= 25°C
T
C
= 100°C I
F
20 A
(1) Gate
(2) Collector
(3) Emitter
*1
*1 Built in FRD
(1)
(2)
(3)
(1)(2)(3)
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Datasheet
RGW60TS65D
Thermal Resistance
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Conditions
Values
Parameter Symbol
Values
0.84
1.62
Unit
Min. Typ. Max.
ICES VCE = 650V, VGE = 0V --
Unit
Min. Typ. Max.
°C/W
°C/W
-V
Collector - Emitter Saturation
Voltage VCE(sat)
Gate - Emitter Threshold
Voltage VGE(th)
Tj = 25°C - 1.5
Tj = 175°C - 1.85
IC = 30A, VGE = 15V
VCE = 5V, IC = 20.0mA 5.0 6.0 V
V
nA
200
10
1.9
-
7.0
μA
Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V --
Collector Cut - off Current
Thermal Resistance IGBT Junction - Case Rθ(j-c) --
Thermal Resistance Diode Junction - Case Rθ(j-c) --
Collector - Emitter Breakdown
Voltage BVCES IC = 10μA, VGE = 0V 650 -
Parameter Symbol
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Datasheet
RGW60TS65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Reverse Bias Safe Operating
Area RBSOA FULL SQUARE -
RG = 100Ω, Tj = 175°C
VP = 650V, VGE = 15V
IC = 120A, VCC = 520V
-
- 0.63 -
mJ
reverse recovery
ns
114 -
mJ
Turn - off Switching Loss Eoff reverse recovery
ns
Rise Time tr-14-
Turn - off Delay Time
-36-Turn - on Delay Time td(on) IC = 30A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
VGE = 0V -65-
VCE = 30V - 2530 -Input Capacitance Cies
pFOutput Capacitance Coes
Reverse Transfer Capacitance - 46
nCGate - Emitter Charge Qge IC = 30A -17-
Gate - Collector Charge Qgc VGE = 15V -31-
Total Gate Charge QgVCE = 400V -84-
Rise Time tr
Turn - on Switching Loss Eon - 0.48 -
-
Fall Time tf-35-
Turn - off Delay Time td(off)
VGE = 15V, RG = 10Ω-13-
Tj = 25°C
Inductive Load
*Eon includes diode
-f = 1MHz
Cres
Turn - on Delay Time td(on) IC = 30A, VCC = 400V -37-
Fall Time tf-76-
- 0.49
Turn - off Switching Loss Eoff - 0.49 -
td(off)
Turn - on Switching Loss Eon *Eon includes diode
133 -
Inductive Load
-
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Datasheet
RGW60TS65D
FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Diode Forward Voltage VF
IF = 20A
V
Tj = 25°C - 1.45 1.9
Tj = 175°C - 1.55 -
ns
Diode Peak Reverse Recovery
Current Irr
IF = 20A
- 6.7 - A
VCC = 400V
Diode Reverse Recovery Time trr -92-
μC
Tj = 25°C
Diode Reverse Recovery Energy Err - 14.1 - μJ
Diode Reverse Recovery
Charge Qrr
diF/dt = 200A/μs
- 0.34 -
ns
Diode Peak Reverse Recovery
Current Irr
IF = 20A
- 7.8 - A
VCC = 400V
Diode Reverse Recovery Time trr - 123 -
μC
Tj = 175°C
Diode Reverse Recovery Energy Err - 30.7 - μJ
Diode Reverse Recovery
Charge Qrr
diF/dt = 200A/μs
- 0.59 -
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Datasheet
RGW60TS65D
Electrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Power Dissipation: PD[W]
Case Temperature : TC[ºC]
Fig.2 Collector Current vs. Case Temperature
Collector Current : IC[A]
Case Temperature : TC[ºC]
Fig.4 Reverse Bias Safe Operating Area
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.3 Forward Bias Safe Operating Area
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
0
20
40
60
80
100
120
140
160
180
200
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
0 200 400 600 800
Tj≦175ºC
VGE≧15V
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Tj≦175ºC
VGE≧15V
0.01
0.1
1
10
100
1000
1 10 100 1000
Tc=25ºC
Single Pulse
1µs
100µs
10µs
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Datasheet
RGW60TS65D
Electrical Characteristic Curves
Collector To Emitter Voltage : VCE [V]
Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics
Collector Current : IC[A]
Collector To Emitter Voltage : VCE [V]
Collector Current : IC[A]
Fig.7 Typical Transfer Characteristics
Collector Current : IC[A]
Gate to Emitter Voltage : VGE [V]
Fig.8 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
Collector To Emitter Saturation Voltage
: VCE (sat) [V]
Junction Temperature : Tj[ºC]
0
20
40
60
80
100
120
012345
Tj=175ºC
VGE=12V
VGE=20V
VGE=15V
VGE=10V
VGE=8V
0
20
40
60
80
100
120
012345
Tj=25ºC
VGE=20V
VGE=15V
VGE=12V
VGE=10V
VGE=8V
0
10
20
30
40
50
60
024681012
VCE=10V
Tj=175ºC Tj=25ºC
0
1
2
3
4
25 50 75 100 125 150 175
VGE=15V
IC=60A
IC=30A
IC=15A
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Datasheet
RGW60TS65D
Electrical Characteristic Curves
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE (sat) [V]
Gate to Emitter Voltage : VGE [V]
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE (sat) [V]
Gate to Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time vs.
Collector Current
Switching Time [ns]
Collector Current : IC[A]
Switching Time [ns]
Gate Resistance : RG[Ω]
0
5
10
15
20
5 101520
Tj=25ºC
IC=60A
IC=30A
IC=15A
0
5
10
15
20
5101520
Tj=175ºC
IC=60A
IC=30A
IC=15A
1
10
100
1000
0 102030405060
td(off)
tf
td(on)
tr
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
1
10
100
1000
0 1020304050
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
td(off) tf
td(on)
tr
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Datasheet
RGW60TS65D
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses vs.
Collector Current
Switching Energy Losses [mJ]
Collector Current : IC[A]
Switching Energy Losses [mJ]
Gate Resistance : RG[Ω]
Fig.14 Typical Switching Energy Losses vs.
Gate Resistance
Fig.15 Typical Capacitance vs.
Collector To Emitter Voltage
Capacitance [pF]
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
Gate to Emitter Voltage : VGE [V]
Gate Charge : Qg[nC]
0.01
0.1
1
10
0 102030405060
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
Eoff
Eon
1
10
100
1000
10000
0.01 0.1 1 10 100
f=1MHz
VGE=0V
Tj=25ºC
Cies
Coes
Cres
0.01
0.1
1
10
0 1020304050
Eoff
Eon
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
0
5
10
15
0 20406080100
VCC=400V
IC=30A
Tj=25ºC
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Datasheet
RGW60TS65D
Electrical Characteristic Curves
Fig.17 Typical Diode Forward Current vs.
Forward Voltage
Forward Current : IF[A]
Forward Voltage : VF[V]
Reverse Recovery Time : trr [ns]
Forward Current : IF[A]
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
Reverse Recovery Curren : Irr [A]
Forward Current : IF[A]
Fig.20 Typical Diode Reverse
Recovery Charge
Reverse Recovery Charge : Qrr [μC]
Forward Current : IF[A]
0
20
40
60
80
100
120
012345
Tj=175ºC
Tj=25ºC
0
100
200
300
400
0 102030405060
VCC=400V
diF/dt=200A/μs
Inductive load
Tj=175ºC
Tj=25ºC
0
5
10
15
20
0 102030405060
Tj=175ºC
Tj=25ºC VCC=400V
diF/dt=200A/μs
Inductive load
0
0.5
1
1.5
2
2.5
0 102030405060
Tj=175ºC
Tj=25ºC
VCC=400V
diF/dt=200A/μs
Inductive load
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Datasheet
RGW60TS65D
Electrical Charact eri st i c Curves
0.001
0.01
0.1
1
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
D= 0.5 0.1
0.2
Single Pulse
0.05
0.01
0.02
0.001
0.01
0.1
1
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
D= 0.5
0.2
0.1
Single Pulse
0.05
0.01
0.02
Fig.21 Typical IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
Pulse Width : t1[s]
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
Fig.22 Typical Diode Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
Pulse Width : t1[s]
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
C1 C2 C3 R1 R2 R3
71.38u 539.3u 602.0u 92.71m 23.69m 413.6m
C1 C2 C3 R1 R2 R3
65.51u 373.7u 1.268m 200.5m 341.9m 457.6m
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Datasheet
RGW60TS65D
Inductive Load Switching Circuit and Waveform
VG
D.U.T.
D.U.T.
Fig.23 Inductive Load Circuit
Fig.24 Inductive Load Waveform
tr
toff
10%
90%
tf
td(on)
td(off)
Gate Drive Time
VCE(sat)
10%
90%
ton
VGE
IC
VCE
Eon
10%
Eoff
IF
diF/dt
Irr
trr , Qrr
Fig.25 Diode Reverce Recovery Waveform
11/11 2017.10 - Rev.A
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Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions.
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
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