INSULATED GATE BIPOLAR TRANSISTOR
www.irf.com 1
IRGS30B60K
IRGSL30B60K
VCES = 600V
IC = 30A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 150°C.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
PD - 94741
D2Pak
IRGS30B60K TO-262
IRGSL30B60K
E
C
G
n-channel
07/31/03
Absolute Maximum Ratings
Parameter Max. Units
VCES Colle c to r-to-Em i tter Volt ag e 600 V
IC @ TC = 25°C Cont inuous Colle c tor Curr ent 60
IC @ TC = 100°C Cont inuous Colle ctor Curren t 30 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 120
ILM Cla m ped In duc tiv e Load cu r rent
c
120
VISOL RMS Isolatio n Voltage, Terminal to Case, t=1 min. 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximu m Powe r Dissipatio n 304 W
PD @ TC = 100°C Maximum Power Dissipation 122
TJOperating Junction and -55 to +150
TSTG Sto rag e Tem per atur e Ra nge °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mo unti ng Tor que, 6-32 or M 3 Scr ew 10 lbf·in ( 1.1 N ·m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junctio n-to-Case- IG BT ––– ––– 0.41 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient (PCB Mount, Steady State)
d
––– ––– 40
Wt Weight ––– 1.44 ––– g
IRGS/SL30B60K
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Note to are on page 12
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collect or-to- Emit ter Breakdow n Voltage 600——V
VGE = 0V, IC = 50 0
µ
A
∆V(BR)CES
/
∆TJTemperature Coeff. of Breakdown Voltage —0.40—V/°C
VGE = 0V, IC = 1m A (25°C- 15 0°C)
VCE(on) Collector-to-Emitter Voltage — 1.95 2.35 IC = 30A, VGE = 15V, TJ = 25°C 5,6,7
—2.402.75V
IC = 30 A, VGE = 15V, TJ = 150° C 8,9,10
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250
µ
A8,9,10
∆VGE(th)
/
∆TJThreshold Voltag e temp. coefficient — -10 — mV/°
C
VCE = VGE, IC = 1.0mA (25° C-150°C) 11
gfe Forward Transconductance — 18 — S VCE = 50 V, IC = 50A, PW = 80
µ
s
ICES Zero Gate Voltage Collector Current — 5 .0 250 µA VGE = 0V , VCE = 600V
—10002000 VGE = 0V, VCE = 600V , TJ = 15 0°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±2 0V, VCE = 0V
Switchin
g
Characteristics @ TJ = 25°C (unless otherwise specifi ed)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
QgTo tal Gate Char ge (t urn -on) — 102 153 IC = 30 A 17
Qge Ga t e - to-E m i t ter C ha r ge (turn - on) — 14 21 nC VCC = 40 0V CT1
Qgc Gat e- to- C ollector Char ge (turn -on ) — 44 66 VGE = 15V
Eon T urn-O n S witc hin g Los s — 350 62 0 IC = 30 A, VCC = 400V CT4
Eoff Tu rn-O ff Swi tching Loss — 825 955 µJ VGE = 15 V, RG = 10Ω, L = 200
µ
H
Etot Total Switch ing Loss — 1175 1575 TJ = 25°C
e
td(on) Turn-O n d e la y time — 46 6 0 IC = 30A, VCC = 400V
trRis e ti me — 2 8 39 ns VGE = 15V, RG = 10 Ω, L = 200
µ
H CT4
td(off) Turn-Off delay time — 185 200 TJ = 25°C
tfFall time — 31 40
Eon T urn-O n S witc hin g Los s — 6 35 1085 IC = 30 A, VCC = 400V CT4
Eoff Tu rn-O ff Swi tchin g Loss — 1150 1350 µJ VGE = 15 V, RG = 10 Ω, L = 200
µ
H 12,14
Etot Total Switch ing Loss — 1785 2435 TJ = 150°C
e
WF1,WF2
td(on) Turn-O n d e la y time — 46 6 0 IC = 30A, VCC = 400V 13,15
trRis e ti me — 2 8 39 ns VGE = 15V, RG = 10 Ω, L = 200
µ
H CT4
td(off) Turn-Off delay time — 205 235 TJ = 150°C WF1
tfFall time — 32 42 WF2
LEIn tern al Emitter Inductance — 7.5 — nH Measured 5m m fro m p a c k age
Cies Input C a pacitan c e — 1 7 50 — VGE = 0V
Coes Output Capacitance — 160 — pF VCC = 30V 16
Cres Reverse Tra nsfer Capacitance — 60 — f = 1.0MHz
RBSOA Reverse Bias Safe Op erating Ar ea FULL SQ UARE TJ = 15 0°C, IC = 120A, Vp = 600V 4
VCC=500V,VGE = +15V to 0V,RG =10Ω CT2
S CS O A Sho r t C ir c u i t Safe Operatin g A r e a 10 — — µ s TJ = 150° C, Vp = 600V, RG = 10Ω CT3
VCC=360V,VGE = +15V to 0V WF3
ISC (Peak) Peak Short Circuit Collector Current — 200 — A WF3
IRGS/SL30B60K
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160
TC (°C)
0
20
40
60
80
IC (A)
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
10 µs
100 µs
1ms
DC
10 100 1000
VCE (V)
1
10
100
1000
IC A)
IRGS/SL30B60K
4 www.irf.com
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRGS/SL30B60K
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Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 10 - Typical VCE vs. VGE
TJ = 150°C
Fig. 9 - Typical V CE vs. VGE
TJ = 25°C
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
ICE (A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
IRGS/SL30B60K
6 www.irf.com
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; V CE= 400V
ICE= 30A; VGE= 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 30A; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 10Ω; VGE= 15V
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V,
RG= 10Ω; VGE= 15V
0 20406080
IC (A)
0
500
1000
1500
2000
2500
3000
Energy (µJ)
EOFF
EON
020 40 60 80
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
025 50 75 100 125
RG (Ω)
0
500
1000
1500
2000
2500
3000
Energy (µJ)
EON
EOFF
025 50 75 100 125
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
IRGS/SL30B60K
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Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE
ICE = 30A; L = 600µH
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 25 50 75 100 125
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
200V
400V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Puls e Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. P eak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.200 0.000428
0.209 0.013031
τJ
τJ
τ1
τ1τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
IRGS/SL30B60K
8 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode cl amp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRGS/SL30B60K
www.irf.com 9
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
I
CE
(A )
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
-100
0
100
200
300
400
500
600
700
15.90 16.00 16.10 16.20 16.30
Time (µs )
V
CE
(V )
-10
0
10
20
30
40
50
60
70
I
CE
(A )
TEST CURRENT
90% test current
5% VCE
1 0 % test curren
t
tr
Eon Loss
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V )
0
50
100
150
200
250
300
I
CE
(A )
VCE
ICE
IRGS/SL30B60K
10 www.irf.com
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
F530S
THIS IS A
N IRF530S WITH
LO
T C
ODE 8024
A
SSEM
BLED O
N WW
02, 2000
IN THE A
SSEMBLY LINE "L"
A
SSEM
BLY
LO
T C
ODE
INTERNA
TIO
NA
L
REC
TIFIER
LO
G
O
PA
RT NUM
BER
DA
TE C
O
DE
YEA
R 0 = 2000
W
EEK 02
LINE L
IRGS/SL30B60K
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
EXA
M
PLE:THIS IS A
N IRL3103L
LOT C
O
DE 1789
A
SSEM
BLY
PA
RT NUMBER
DA
TE C
ODE
W
EEK 19
LINE C
LO
T C
ODE
YEA
R 7 = 1997
A
SSEM
BLED O
N WW
19, 1997
IN THE A
SSEM
BLY LINE "C
"LOG
O
REC
TIFIER
INTERNA
TIONA
L
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRGS/SL30B60K
12 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOT ES :
1. COMFORMS TO EIA-418.
2. CONT ROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
