MBR0530
Preliminary Data Sheet PD-20202 12/01
2www.irf.com
Part number Value
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Voltage Ratings
IFForward Current 0.5 A DC, TL = 126°C
IFSM Max. Peak One Cycle Non-Repetitive 75 A 5µs Sine or 3µs Rect. pulse
Surge Current, @ TJ = 25°C 10 A 10ms Sine or 6ms Rect. pulse
Parameters Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
TJMax. Junction Temperature Range (*) - 65 to 150 °C
Tstg Max. Storage Temperature Range - 65 to 150 °C
RthJL Max. Thermal Resistance Junction 150 °C/W Mounted on PC board FR4 with minimum pad size
to Lead
Rth(j-a) Max. Thermal Resistance Junction 200 °C/W 1 inch square pad size (1 x 0.5 inch for each lead) on
to Ambient FR4 board
Wt Approximate Weight 0.012 gr
Case Style SOD123
Device Marking IR530
Thermal-Mechanical Specifications
Parameters Value Units Conditions
VFM Max. Forward Voltage Drop (1) 0.375 V @ 0.1A TJ = 25°C
0.430 V @ 0.5A
VFM Max. Forward Voltage Drop (1) 0.250 V @ 0.1A TJ = 125 °C
0.350 V @ 0.5A
IRM Max. Reverse Leakage (1) 20 µA VR = 15V TJ = 25°C
Current 130 µA VR = 30V
CTMax. Junction Capacitance 90 pF VR = 5VDC (test signal range 100KHz to 1Mhz), TJ = 25°C
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
Electrical Specifications
Parameters Value Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
(*) dPtot 1
dTj Rth( j-a)
< thermal runaway condition for a diode on its own heatsink