MJH11019G - ON SEMICONDUCTOR

July, 2012 − Rev. 9

1Publication Order Number:

MJH11017/D

MJH11017, MJH11019,

MJH11021(PNP)

MJH11018, MJH11020,

MJH11022(NPN)

Complementary Darlington

Silicon Power Transistors

These devices are designed for use as general purpose amplifiers,

low frequency switching and motor control applications.

Features

•High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

•Collector−Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

•Low Collector−Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

•Monolithic Construction

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

VCEO 150

200

250

Vdc

Collector−Base Voltage

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

VCB 150

200

250

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak (Note 1)

IC15

30

Adc

Base Current IB0.5 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD150

1.2

W

W/_C

Operating and Storage Junction Temperature

Range

TJ, Tstg –65 to

+150

_C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.83 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−93

(TO−218)

CASE 340D

STYLE 1

15 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150−250 VOLTS, 150 WATTS

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See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR 2

BASE

1

EMITTER 3

COLLECTOR 2

BASE

1

EMITTER 3

NPN PNP

MJH11018 MJH11017

MJH11020

MJH11022

MJH11019

MJH11021

3

2

1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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2

MARKING DIAGRAMS

AYWWG

MJH110xx

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

MJH110xx = Device Code

xx = 17, 19, 21, 18, 20, 22

1 BASE

2 COLLECTOR

3 EMITTER

TO−247 TO−218

ORDERING INFORMATION

Device Order Number Package Type Shipping

MJH11017G TO−218

(Pb−Free)

30 Units / Rail

MJH11018G TO−218

(Pb−Free)

30 Units / Rail

MJH11019G TO−218

(Pb−Free)

30 Units / Rail

MJH11020G TO−218

(Pb−Free)

30 Units / Rail

MJH11021G TO−218

(Pb−Free)

30 Units / Rail

MJH11022G TO−218

(Pb−Free)

30 Units / Rail

MJH11017G TO−247

(Pb−Free)

30 Units / Rail

MJH11018G TO−247

(Pb−Free)

30 Units / Rail

MJH11019G TO−247

(Pb−Free)

30 Units / Rail

MJH11020G TO−247

(Pb−Free)

30 Units / Rail

MJH11021G TO−247

(Pb−Free)

30 Units / Rail

MJH11022G TO−247

(Pb−Free)

30 Units / Rail

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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PD, POWER DISSIPATION (WATTS)

160

0

TC, CASE TEMPERATURE (°C)

40 60 100 120 16080 14020

Figure 1. Power Derating

0

20

40

60

80

100

140

120

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

ÎÎÎÎ

VCEO(sus)

ÎÎÎ

150

200

250

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018

(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020

(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022

ÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ÎÎÎÎ

ICEV

ÎÎÎ

−

ÎÎÎÎ

0.5

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎ

400

100

ÎÎÎÎ

15,000

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

ÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

2.5

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

ÎÎÎÎ

VBE(sat)

ÎÎÎ

−

ÎÎÎÎ

3.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

fT

ÎÎÎ

3.0

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJH11018, MJH11020, MJH11022

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021

ÎÎÎÎ

Cob

ÎÎÎ

−

ÎÎÎÎ

400

600

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎ

75

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

Typical

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎ

NPN

ÎÎÎÎ

PNP

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

ÎÎÎÎ

td

ÎÎÎ

150

ÎÎÎÎ

75

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎ

tr

ÎÎÎ

1.2

ÎÎÎÎ

0.5

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎ

ts

ÎÎÎ

4.4

ÎÎÎÎ

2.7

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎ

tf

ÎÎÎ

2.5

ÎÎÎÎ

2.5

ÎÎÎ

ms

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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Figure 2. Switching Times Test Circuit

RB & RC varied to obtain desired current levels

D1, must be fast recovery types, e.g.:

1N5825 used above IB ≈ 100 mA

MSD6100 used below IB ≈ 100 mA

tr, tf ≤ 10 ns

Duty Cycle = 1.0%

For td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit, reverse diode and voltage polarities.

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

VCC

100 V

TUT

SCOPE

RB

+4.0 V

D1

51

RC

25 ms

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1.0 2.0 5.0 10 20 50 100 200 500

RqJC(t) = r(t) RqJC

RqJC = 0.83°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000

0.5

0.3

0.07

0.03

0.01 0.03 3.0 30 3000.3

0.2

0.1

0.05

0.02

0.01

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.5 ms

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

1.0 ms

5.0 ms

0.1 ms

dc

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0

30

2.0

IC, COLLECTOR CURRENT (AMPS)

3.0 10

10

0.5

0.2

5.0

20

1.0

20 100

0

TC = 25°C SINGLE PULSE

5.0 50 25015030

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 3. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20

30

140

IC, COLLECTOR CURRENT (AMPS)

60 180100

10

20

260220

0

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

L = 200 mH

IC/IB1 ≥ 50

TC = 100°C

VBE(off) = 0-5.0 V

RBE = 47 W

DUTY CYCLE = 10%

0

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current conditions during

reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 5 gives RBSOA characteristics.

TC = 150°C

1000

3000

2000

5000

7000

10,000

PNP NPN

Figure 6. DC Current Gain

0.2 153.01.00.5 5.0 100.3

hFE, DC CURRENT GAIN

TC = 150°C

25°C

-55°C

VCE = 5.0 V

IC, COLLECTOR CURRENT (AMPS)

100

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

500

200

0.7

1000

2000

5000

10,000

0.2 153.01.00.5 5.0 100.3 7.0

25°C

-55°C

VCE = 5.0 V

100

500

200

0.7

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB, BASE CURRENT (mA)

1.0

2.0 5.0

3.0

2.5

4.0

3.5

3.0 10 30

4.5

2.0

50 100

IC = 15 A

20

Figure 7. Collector Saturation Region

Figure 8. “On” Voltages

1.5

300 500 1000200

TJ = 25°C

IC = 10 A

IC = 5.0 A

IC, COLLECTOR CURRENT (AMPS)

3.0

2.5

VOLTAGE (VOLTS)

4.0

3.5

2.0

0.5

0.2 0.5 5.00.3 1.00.7 3.0

TJ = 25°C

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

7.02.0 10 20

IB, BASE CURRENT (mA)

1.0 2.0 5.03.0 10 30 50 100

IC = 15 A

20 300 500200

TJ = 25°C

IC = 10 A

IC = 5.0 A

IC, COLLECTOR CURRENT (AMPS)

1.5

1.0

1000

PNP NPN

3.0

2.5

4.0

3.5

2.0

0.5

0.2 0.5 5.01.00.7

TJ = 25°C

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

2.0 10 20

1.5

1.0

3.0

2.5

4.0

3.5

4.5

2.0

1.5

BASE

EMITTER

COLLECTOR

BASE

EMITTER

COLLECTOR

PNP NPN

Figure 9. Darlington Schematic

MJH11018

MJH11020

MJH11022

MJH11017

MJH11019

MJH11021

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A

D

V

G

K

SL

U

BQ

123

4

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

E

C

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TO−247

CASE 340L−02

ISSUE F

N

P

A

K

W

F

D

G

U

E

0.25 (0.010) MYQS

J

H

C

4

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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MJH11017/D

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