MJH11017, MJH11019, MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 15 30 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 1.2 W W/_C TJ, Tstg -65 to +150 _C Collector Current - Continuous - Peak (Note 1) Operating and Storage Junction Temperature Range Max Characteristic EMITTER 3 MJH11017 MJH11019 MJH11021 Unit Vdc 150 200 250 SOT-93 (TO-218) CASE 340D STYLE 1 Vdc 150 200 250 1 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case PNP COLLECTOR 2 COLLECTOR 2 Symbol Max Unit RqJC 0.83 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. 2 3 TO-247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO-247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 July, 2012 - Rev. 9 1 Publication Order Number: MJH11017/D MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) MARKING DIAGRAMS TO-247 TO-218 MJH110xx AYWWG 1 BASE AYWWG MJH110xx 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR A Y WW G MJH110xx = = = = = Assembly Location Year Work Week Pb-Free Package Device Code xx = 17, 19, 21, 18, 20, 22 ORDERING INFORMATION Device Order Number Package Type Shipping MJH11017G TO-218 (Pb-Free) 30 Units / Rail MJH11018G TO-218 (Pb-Free) 30 Units / Rail MJH11019G TO-218 (Pb-Free) 30 Units / Rail MJH11020G TO-218 (Pb-Free) 30 Units / Rail MJH11021G TO-218 (Pb-Free) 30 Units / Rail MJH11022G TO-218 (Pb-Free) 30 Units / Rail MJH11017G TO-247 (Pb-Free) 30 Units / Rail MJH11018G TO-247 (Pb-Free) 30 Units / Rail MJH11019G TO-247 (Pb-Free) 30 Units / Rail MJH11020G TO-247 (Pb-Free) 30 Units / Rail MJH11021G TO-247 (Pb-Free) 30 Units / Rail MJH11022G TO-247 (Pb-Free) 30 Units / Rail http://onsemi.com 2 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 150 200 250 - - - - - - 1.0 1.0 1.0 - - 0.5 5.0 - 2.0 400 100 15,000 - - - 2.5 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 0.1 Adc, IB = 0) MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 Collector Cutoff Current (VCE = 75 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) (VCE = 125 Vdc, IB = 0) MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 VCEO(sus) ICEO Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) ICEV Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA) VCE(sat) Vdc Base-Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) - 2.8 Vdc Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) - 3.8 Vdc fT 3.0 - - Cob - - 400 600 pF hfe 75 - - DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11018, MJH11020, MJH11022 MJH11017, MJH11019, MJH11021 Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Typical Characteristic Delay Time Rise Time Storage Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 Symbol NPN PNP Unit td 150 75 ns tr 1.2 0.5 ms ts 4.4 2.7 ms tf 2.5 2.5 ms MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) VCC 100 V RC SCOPE TUT RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.: 1N5825 used above IB 100 mA MSD6100 used below IB 100 mA V2 APPROX +12 V 0 V1 APPROX -8.0 V tr, tf 10 ns Duty Cycle = 1.0% RB 51 D1 +4.0 V 25 ms For td and tr, D1 is disconnected and V2 = 0 For NPN test circuit, reverse diode and voltage polarities. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 P(pk) RqJC(t) = r(t) RqJC RqJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.05 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 3. Thermal Response FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) TC = 25C SINGLE PULSE 30 20 10 5.0 2.0 1.0 0.5 0.2 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 2.0 3.0 5.0 10 20 30 50 100 150 250 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 4 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) REVERSE BIAS IC, COLLECTOR CURRENT (AMPS) 30 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. L = 200 mH IC/IB1 50 TC = 100C VBE(off) = 0-5.0 V RBE = 47 W DUTY CYCLE = 10% 20 10 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 0 0 20 140 60 100 180 220 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 260 Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) PNP 10,000 VCE = 5.0 V 3000 2000 TC = 150C 1000 25C 500 -55C 200 100 VCE = 5.0 V 5000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 NPN TC = 150C 2000 25C 1000 500 -55C 200 100 0.2 0.3 0.5 0.7 1.0 3.0 5.0 10 15 0.2 IC, COLLECTOR CURRENT (AMPS) 0.3 0.5 0.7 1.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain http://onsemi.com 5 10 15 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) NPN 4.5 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP TJ = 25C 4.0 3.5 3.0 2.5 IC = 15 A 2.0 IC = 10 A 1.5 1.0 1.0 IC = 5.0 A 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 4.5 TJ = 25C 4.0 3.5 3.0 IC = 15 A 2.5 2.0 IC = 10 A 1.5 IC = 5.0 A 1.0 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 7. Collector Saturation Region PNP NPN 4.0 4.0 3.5 3.5 TJ = 25C VOLTAGE (VOLTS) VOLTAGE (VOLTS) 3.0 2.5 VBE(sat) @ IC/IB = 100 2.0 1.5 TJ = 25C 3.0 2.5 VBE(sat) @ IC/IB = 100 2.0 1.5 VBE @ VCE = 5.0 V VBE @ VCE = 5.0 V 1.0 1.0 VCE(sat) @ IC/IB = 100 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.5 0.2 20 VCE(sat) @ IC/IB = 100 0.5 0.7 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. "On" Voltages PNP NPN MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 COLLECTOR BASE COLLECTOR BASE EMITTER EMITTER Figure 9. Darlington Schematic http://onsemi.com 6 20 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO-247 CASE 340L-02 ISSUE F -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C -B- E U N L 4 A -Q- 1 2 0.63 (0.025) 3 P -Y- K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 7 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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