2N3501
150 Volts
500mAmps
Features
• Meets MIL-S-19500/366
• Collector-Base Voltage 150V
• Collector Current: 500 mA
• Fast Switching 1265 nS
RATING SYMBOL MAX. UNIT
Collector-Emitter Voltage VCEO
150 Vdc
Collector-Base Voltage VCBO
150 Vdc
Emitter-Base Voltage VEBO
6.0 Vdc
Collector Current—Continuous IC
300 mAdc
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
PD1.0
5.71 Watt
mW/oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
PD5.0
28.6 Watts
mW/oC
Operating Temperature Range TJ
-55 to
+200
oC
Storage Temperature Range TS
-55 to
+200
oC
Thermal Resistance, Junction to Ambient RθJA 175 oC/W
Thermal Resistance, Junction to Case RθJC 35 oC/W
Maximum Ratings
NPN
BIPOLAR
TRANSISTOR
Mechanical Outline
TO-39 Package
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0) BVCEO 150 -- -- Vdc
Collector-Base Breakdown Voltage
(IC = 10 µAdc, IE = 0) BVCBO 150 -- -- Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0) BVEBO 6.0 -- -- Vdc
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
(VCB = 75 Vdc, IE = 0, TA = 150oC)
ICBO --
-- --
-- 0.05
50
µAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0) IEBO -- -- 25 nAdc
D.C. Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(Ic = 150 mAdc, VCE = 10Vdc) @ 55C
(IC = 300 mAdc, VCE = 10 Vdc)(1)
hFE
35
50
75
100
45
20
--
--
--
--
--
--
--
--
--
300
--
--
--
Collector-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
VCE(Sat)
--
-- --
-- 0.2
0.4
Vdc
Base-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
VBE(Sat)
--
-- --
-- 0.8
1.2
Vdc
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(VCE = 20 Vdc, IC = 20 mAdc, f = 100 MHz) /hfe/1.5 -- 8
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100kHz < f < 1MHz) COBO -- -- 8.0 pf
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100kHz < f < 100MHz) CIBO -- -- 80 pf
Small -signal Current Gain
(Ic = 10mAdc, VCE = 10Vdc, f = 1.0 kHz) hfe 75 -- 300
Noise figure
(VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz) NF 16 dB
Noise figure
( VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz) NF 6dB
Turn - on time
( VEB = 12Vdc, IC = 150mAdc, IB1 = 15mAdc) ton 115 nS
Turn - off time
( IC = 150mAdc, IB1 = IB2 = -15mAdc) toff 1150 nS
Electrical Parameters (TA @ 25°°C unless otherwise specified)
2N3501
(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
MCC
www.mccsemi.com
Revision: 2 2003/04/30
