2N3501 MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# NPN BIPOLAR TRANSISTOR Features * * * * 150 Volts 500mAmps TO-39 Package Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS Maximum Ratings RATING Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current--Continuous Total Device Dissipation o @ T A = 25 C o Derate above 25 C Total Device Dissipation o @ T C = 25 C o Derate above 25 C Operating Temperature Range SYMBOL MAX. UNIT VCEO VCBO VEBO IC PD 150 150 6.0 300 Vdc Vdc Vdc mAdc 1.0 5.71 Watt o mW/ C 5.0 28.6 -55 to +200 -55 to +200 175 35 Watts o mW/ C o C PD TJ Storage Temperature Range TS Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case RJA RJC o C o C/W C/W o Mechanical Outline www.mccsemi.com Revision: 2 2003/04/30 MCC 2N3501 Electrical Parameters (TA @ 25C unless otherwise specified) CHARACTERISTICS Off Characteristics Collector-Emitter Breakdown Voltage(1) (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, IC = 0) Collector Cutoff Current (V CB = 75 Vdc, I E = 0) o (V CB = 75 Vdc, I E = 0, TA = 150 C) Emitter Cutoff Current (V EB(off) = 4.0 Vdc, I C = 0) D.C. Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc)(1) (I C = 150 mAdc, V CE = 10 Vdc)(1) (I c = 150 mAdc, V CE = 10Vdc) @ 55C (I C = 300 mAdc, V CE = 10 Vdc)(1) Collector-Emitter Saturation Voltage(1) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 150 mAdc, I B = 15 mAdc) Base-Emitter Saturation Voltage(1) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 150 mAdc, I B = 15 mAdc) Magnitude of common emitter small-signal short-circuit forward current transfer ratio (V CE = 20 Vdc, I C = 20 mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, 100kHz < f < 1MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, 100kHz < f < 100MHz) Small -signal Current Gain (I c = 10mAdc, V CE = 10Vdc, f = 1.0 kHz) Noise figure (V CE = 10Vdc, IC = 0.5mAdc; R g = 1kohms, f = 1MHz) Noise figure ( V CE = 10Vdc, I C = 0.5mAdc; R g = 1kohms, f = 1MHz) Turn - on time ( V EB = 12Vdc, I C = 150mAdc, I B1 = 15mAdc) Turn - off time ( I C = 150mAdc, I B1 = IB2 = -15mAdc) (1) SYMBOL MIN. TYP. MAX. 150 -- -- 150 -- -- 6.0 -- -- --- --- 0.05 50 -- -- 25 UNIT Vdc BVCEO Vdc BVCBO Vdc BVEBO Adc ICBO nAdc IEBO -- hFE 35 50 75 100 45 20 ------- ---300 --Vdc VCE(Sat) --- --- 0.2 0.4 Vdc VBE(Sat) --- --- 0.8 1.2 1.5 -- 8 -- -- -- 8.0 -- -- 80 75 -- NF 300 16 dB NF 6 dB ton 115 nS toff 1150 nS /hfe/ pf COBO pf CIBO hfe Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% www.mccsemi.com Revision: 2 2003/04/30