RS1A/BRS1M/B VISHAY 1.0A Surface Mount Fast Recovery Rectifiers Features @ Glass passivated die construction Fast recovery time for high efficiency Low forward voltage drop and high current capability @ Surge overload rating to 30A peak Ideally suited for automated assembly Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings SMB Vishay Lite-On Power Semiconductor 14 428 Tj = 25C Repetitive peak reverse voltage RS1A/AB Vrru 50 Vv =Working peak reverse voltage RS1B/BB | =VrRwm 100 Vv =DC Blocking voltage RS1D/DB =VpR 200 V RS1G/GB 400 Vv RS1J/JB 600 Vv RS1K/KB 800 Vv RS1M/MB 1000 Vv Peak forward surge current lesm 30 A Average forward current Ty7=120C lFay 1 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage lp=1.5A Ve 1.3 Vv Reverse current Ta=25C IR 5 uA Ta=1 25C IR 200 uA Reverse recovery time IR=1A, IrF=0.5A, | RS1A/ABG/GB ter 150 | ns 1=0.25A RS1J/JB tie 250 | ns RS1K/KBM/MB ter 500 | ns Diode capacitance VpR=4V, f=1MHz Cp 15 pF Thermal resistance RthJT 20 KAW junction to terminal Rev. A2, 24-Jun-98 RS1A/BRS1M/B Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) 1.2 => 30 e < a ~ < Single Half Sine-Wave E 1.0 2 (JEDEC Method) = 3 1 Io 5 o N Tj = 150C Oo o 5 0.8 D 20 N a \ Oo MN E 0.6 v MM Ww oO D oO ame w 0.4 Ww 10 mL 2 x < \ o I 0.2 o > I a @ 0 = 0 2 50 75 100 125 150 175 1 10 100 15474 Tamb Ambient Temperature (C ) 15476 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 10 1000 = < < = = 100 o 1.0 e 8 8 v 10 g w = $ ol cc I a - 1.0 T= 25C IF Pulse Width = 300 ps 0.01 0.1 0 04 0.8 1.2 1.6 0 20 40 60 80 100 120 140 15475 Ve Forward Voltage ( V ) 18477 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98 RS1A/BRS1M/B VISHAY Dimensions in mm \ at ta Vishay Lite-On Power Semiconductor No Suffix Designates SMA Package "BY Suffix Designates SMB Package E = D-H ecneal ous specifications 14461 B SMA SMB Dim Min Max Min Max A 2.29 2.92 3.30 3.94, B 400 460 4.06 LAO] C 1.2] 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.16 1.52 0./6 1,52 J 2.01 2.62 2.00 2.62 All Dimensions in mm Case: molded plastic Polarity: cathode band or cathode notch Approx. weight: SMA 0.065 grams, SMB 0.09 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 RS1A/BRS1M/B Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98