FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a RK % (T. = C) = a a iF te (Ts = 25C) + 14 2] A i@ | We Gk | Vepo | Veno } Ic Pe T) | Icso Ki [Mi Roe Rhee] <4 TOR | he iby aig 1% fas | Cos earn i : i * * hie(real (Vy | Ov) bana | (mw) | (0) | Ged) [Veatv) Vee |ictmAY Ven (vtetmay} byo | (A) \Octo-o} Gea) | Ate) | ry | tay | 2s2202 2203 n 2204) 2%) SW Si.TMe] 800 | 5 | 30A ;250W.) iso | ima | 800 | >i0 | 5 | 30A mesos vs lus 400 266 2205 2206|# K| RF Si.EP| 30 5 30 | 400 | 135 | 0.1 | 10 | 100 | 10 1 wo | -1 | AEG2 8B 300 | 1.3 | 22 {151 # 22071 3] PA Si.E | 80 4 8a |2W.} 150 | 100 | 60 | 30~150] 10 | 2A POO: 2280? paw) 268 2208] 0 | SW Si.EPa| 120 | 7 | 5A | 800 | 175 | 100 | 120 J>1000] 5 | 5A ton=0.4S, toss= 4 eS 84B| 73s ~> 2209] # -F] PA SiEP| 50 5 [15a [OW] 150 | 1 2 | 120 | 5 [ial 5 500 [ 150 *| 50 | 3.3k "| 236 # 2210/= 2] RF. Conv " 30 5 30 | 250 | 125 | o.1 | 10 |[40~320] 6 1 6 | 1 | ey eB a. assutte) 90 *) 3.5 | Gere | 138 2211 92191 =2| RF Si.E | 15 3 20 | 250 | too | #3 | 10 Yao~rl to 3 Movs 0.8 | 7s | 1398p . ima, f= 100MHz?} . 4pS 2213] | Ose sifPal 30 | 4 | 50 | 280 | 100 | 672 | 15 | 70 | 10 | 5 Mav. $7 oom) _| 1.1 | GopS [138d 2214] | Pasw | 10 | 6 | 4a |p) 175 [0.5 | 50 | 100 | 2 | 100 =a0e8, Lees uo") 45 | Sets | 181 ae : Gpe = 32 ~ 40dB * Cre Ce rae * s 215i =) RE SiP) 40 4 50 | 250 | 125 } 0.1 | 40 | >30] 10 4 10 | 4 | ect Rina, peasmttey | >400"| <P 3p] Saks | 138C)do7 20161 # SiEP| 50 4 50 | 300 | 125 | 0.1 | 50 | 4o~140] 12.5 | 12.5 | 12.5 |12.5| Cen ap ovata. sma,sasmitz) | >300"]9.8~2.0) Sor. | 138 227 #] RE.LN siE| 20 | 1.3 | 80 | 580 | 200 | 1 a | 10] 8 | 2 | 8 | 20 | [deebocw? SB. 8000") S7f 306 n 2218) on | on 20 | 1.5 | go | 350 ] 200} i s | 100} 8 | 2 | 8 | 20 | seh ?-S38.,, sooo") &f 320 e219} 1 2} 1.5 | go Oe! 200 | 1 8 | 10 | 8 | 20 | 8 | ~20 | lee ha She) B000*| fre 311 2200)% #1 SW sitae| 500 | 5 | 30a |250W | 150 | ima | 500 | >10; 5 | 30a meas VS AHS 400 266 ae : 7.5 Po=33dBm, = Cre 2221; Wi) RF.PA SiE| 2 | 2.5 | 750 | 7-5W.) 175 | 250 | 20 60 7 200 ee une 6 23aBm) 7 B4C WW Po=38dBm, y= Cre y 2222] on 2 | 2.5 | 1.5A [efoto] 175 | 500 | 20 60 7 400 (ex 1 "Pade OF? 98, SdBm) 12 129 NF= 3 * Ce roe" 2223) | RFLLN 30 | 4 | 20 | 150 | 128 | o1 | a5 | 90 | 6 L | 6 | ~2 [Cav Lea, toomne) 600"! 1 | Spee 1176 2224] = | PA sieP| 200 | 5 | 200 |,fW.) 150 | 2 | 180 | 180 | 10 | 10 | 10 | 10 100*) 2 | 23 */167c 2225 2226 2297 229g]: i] RF sitTP| 160 | 5 | 50 | 750 | 125 | 1 | 160 |40~320) 10 | 10 | 30 | ~10 >50") <7.5 294 | 2220} Z| AP.PASW sit | 200 | 5 | so | 800 | 150 | 0.1 | 200 jo~mo) 5 10 } 30 | ~10 120") 3.5 | 25 )241 22301 | AFLRE | 200 | 5 | 100 | 800 | 150 | 0.1 | 200 fizo~do] 10 | 10 | 10 | 10 >s0*} <7) 30 | 241 | 293i] | oo 0 200 | 5 | 200 ,1.5w{ 150 | 0.1 | 200 fioo~d20) 10 | 50 | 10 | 50 >50*| <10 | 50 | 178