MB05S
THRU
MB10S
0.5Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
Features
• Surface Mount Package
• Glass Passivated Diode Construction
• Moisture Resistant Epoxy Case
• High Surge Current Capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
Device
Marking Maximum
Rccurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MB05S 50V 35V 50V
MB1S 100V 70V 100V
MB2S 200V 140V 200V
MB4S 400V 280V 400V
MB6S 600V 420V 600V
MB8S 800V 560V 800V
MB10S 1000V 700V 1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 0.5A Note1 TA = 30°C
Peak Forward Surge
Current IFSM
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage VF 1.0V IFM = 0.5A;
TA = 25°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5 µATA = 25°C
Typical Junction
Capacitance CJ25pF Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
MBS -1
www.mccsemi.com
.252 .272 6.40 6.91
.017 .029 0.45 0.75
.090 .106 2.30 2.70
.004 .008 0.10 0.20
.021 .023 0.53 0.58
.055 .065 1.40 1.65
----- .200 ----- 5.08
M .040 .050 1.02 1.27
.008 .014 0.15 0.35
MCC
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Notch in case
B
C
D
A
F
G
H
E
+
-
∼
∼∼
∼
∼
∼∼
∼
L
K
JM
N
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
0.8A
Note2 TA = 30°C
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )
solder pad.